CH466298A - Verfahren zur Herstellung von neuen Isochinolobenzodiazepin-Derivaten - Google Patents
Verfahren zur Herstellung von neuen Isochinolobenzodiazepin-DerivatenInfo
- Publication number
- CH466298A CH466298A CH1154865A CH1154865A CH466298A CH 466298 A CH466298 A CH 466298A CH 1154865 A CH1154865 A CH 1154865A CH 1154865 A CH1154865 A CH 1154865A CH 466298 A CH466298 A CH 466298A
- Authority
- CH
- Switzerland
- Prior art keywords
- isoquinolobenzodiazepine
- derivatives
- preparation
- new
- new isoquinolobenzodiazepine
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
- C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
- C07D471/04—Ortho-condensed systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/074—Stacked arrangements of non-apertured devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/55—Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US388237A US3369290A (en) | 1964-08-07 | 1964-08-07 | Method of making passivated semiconductor devices |
US39173264A | 1964-08-24 | 1964-08-24 | |
US46255765A | 1965-06-09 | 1965-06-09 | |
US47797665A | 1965-08-06 | 1965-08-06 | |
US478351A US3383760A (en) | 1965-08-09 | 1965-08-09 | Method of making semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
CH466298A true CH466298A (de) | 1968-12-15 |
Family
ID=27541415
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH824468A CH460007A (de) | 1964-08-07 | 1965-08-06 | Verfahren zur Herstellung neuer Isochinolin-Derivate |
CH1112065A CH460031A (de) | 1964-08-07 | 1965-08-06 | Verfahren zur Herstellung neuer Diazepin-Derivate |
CH824368A CH460033A (de) | 1964-08-07 | 1965-08-06 | Verfahren zur Herstellung neuer Diazepin-Derivate |
CH824568A CH460008A (de) | 1964-08-07 | 1965-08-06 | Verfahren zur Herstellung neuer Isochinolin-Derivate |
CH1154865A CH466298A (de) | 1964-08-07 | 1965-08-17 | Verfahren zur Herstellung von neuen Isochinolobenzodiazepin-Derivaten |
Family Applications Before (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH824468A CH460007A (de) | 1964-08-07 | 1965-08-06 | Verfahren zur Herstellung neuer Isochinolin-Derivate |
CH1112065A CH460031A (de) | 1964-08-07 | 1965-08-06 | Verfahren zur Herstellung neuer Diazepin-Derivate |
CH824368A CH460033A (de) | 1964-08-07 | 1965-08-06 | Verfahren zur Herstellung neuer Diazepin-Derivate |
CH824568A CH460008A (de) | 1964-08-07 | 1965-08-06 | Verfahren zur Herstellung neuer Isochinolin-Derivate |
Country Status (17)
Country | Link |
---|---|
BE (1) | BE668687A (de) |
BG (1) | BG17566A3 (de) |
BR (4) | BR6572393D0 (de) |
CA (1) | CA953297A (de) |
CH (5) | CH460007A (de) |
CY (1) | CY613A (de) |
DE (3) | DE1514363B1 (de) |
ES (1) | ES337005A1 (de) |
FI (1) | FI46968C (de) |
FR (2) | FR4985M (de) |
GB (7) | GB1084598A (de) |
IL (1) | IL24214A (de) |
MC (1) | MC542A1 (de) |
MY (1) | MY7100223A (de) |
NL (4) | NL6510287A (de) |
NO (1) | NO120580B (de) |
SE (5) | SE312863B (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5116264B2 (de) | 1971-10-01 | 1976-05-22 | ||
EP0603973A3 (de) * | 1992-12-23 | 1995-06-28 | Philips Electronics Nv | Halbleiteranordnung mit durch Gräben separierten p-n Übergängen und Verfahren zu ihrer Herstellung. |
EP0603971A3 (de) * | 1992-12-23 | 1995-06-28 | Koninkl Philips Electronics Nv | Halbleiteranordnung mit passivierten Seitenflächen und Verfahren zu ihrer Herstellung. |
US5401690A (en) * | 1993-07-08 | 1995-03-28 | Goodark Electronic Corp. | Method for making circular diode chips through glass passivation |
GB201111217D0 (en) | 2011-07-01 | 2011-08-17 | Ash Gaming Ltd | A system and method |
US9570542B2 (en) * | 2014-04-01 | 2017-02-14 | Infineon Technologies Ag | Semiconductor device including a vertical edge termination structure and method of manufacturing |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2865082A (en) * | 1953-07-16 | 1958-12-23 | Sylvania Electric Prod | Semiconductor mount and method |
NL255453A (de) * | 1960-02-04 | |||
NL284599A (de) * | 1961-05-26 | 1900-01-01 |
-
0
- NL NL129867D patent/NL129867C/xx active
-
1965
- 1965-07-30 GB GB32673/65A patent/GB1084598A/en not_active Expired
- 1965-08-06 CH CH824468A patent/CH460007A/de unknown
- 1965-08-06 NL NL6510287A patent/NL6510287A/xx unknown
- 1965-08-06 CH CH1112065A patent/CH460031A/de unknown
- 1965-08-06 CH CH824368A patent/CH460033A/de unknown
- 1965-08-06 SE SE10352/65A patent/SE312863B/xx unknown
- 1965-08-06 CH CH824568A patent/CH460008A/de unknown
- 1965-08-06 DE DE19651514363 patent/DE1514363B1/de active Pending
- 1965-08-13 GB GB34751/65A patent/GB1126352A/en not_active Expired
- 1965-08-13 GB GB3327/68A patent/GB1126353A/en not_active Expired
- 1965-08-13 GB GB3328/68A patent/GB1126354A/en not_active Expired
- 1965-08-17 CH CH1154865A patent/CH466298A/de unknown
- 1965-08-20 DE DE19651620294 patent/DE1620294A1/de active Pending
- 1965-08-20 DE DE1620295A patent/DE1620295C3/de not_active Expired
- 1965-08-23 IL IL24214A patent/IL24214A/xx unknown
- 1965-08-23 GB GB36070/65A patent/GB1112334A/en not_active Expired
- 1965-08-23 SE SE02594/70A patent/SE351641B/xx unknown
- 1965-08-23 BE BE668687D patent/BE668687A/xx unknown
- 1965-08-23 BR BR172393/65A patent/BR6572393D0/pt unknown
- 1965-08-23 SE SE10988/65A patent/SE322227B/xx unknown
- 1965-08-23 BG BG13266A patent/BG17566A3/xx unknown
- 1965-08-23 MC MC580A patent/MC542A1/xx unknown
- 1965-08-23 BR BR172394/65A patent/BR6572394D0/pt unknown
- 1965-08-23 NO NO159442A patent/NO120580B/no unknown
- 1965-08-23 CA CA938,842A patent/CA953297A/en not_active Expired
- 1965-08-23 FI FI652007A patent/FI46968C/fi active
- 1965-11-23 FR FR39424A patent/FR4985M/fr not_active Expired
- 1965-11-23 FR FR39423A patent/FR5364M/fr not_active Expired
-
1966
- 1966-05-23 GB GB22856/66A patent/GB1133376A/en not_active Expired
- 1966-06-08 BR BR180263/66A patent/BR6680263D0/pt unknown
- 1966-06-08 NL NL6607936A patent/NL6607936A/xx unknown
- 1966-06-08 SE SE7842/66A patent/SE345040B/xx unknown
- 1966-07-08 GB GB30882/66A patent/GB1120488A/en not_active Expired
- 1966-07-29 BR BR181707/66A patent/BR6681707D0/pt unknown
- 1966-08-08 NL NL6611133A patent/NL6611133A/xx unknown
-
1967
- 1967-02-18 ES ES337005A patent/ES337005A1/es not_active Expired
-
1970
- 1970-02-27 SE SE02593/70A patent/SE350500B/xx unknown
-
1971
- 1971-10-01 CY CY61371A patent/CY613A/xx unknown
- 1971-12-31 MY MY1971223A patent/MY7100223A/xx unknown
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