CH466298A - Process for the preparation of new isoquinolobenzodiazepine derivatives - Google Patents

Process for the preparation of new isoquinolobenzodiazepine derivatives

Info

Publication number
CH466298A
CH466298A CH1154865A CH1154865A CH466298A CH 466298 A CH466298 A CH 466298A CH 1154865 A CH1154865 A CH 1154865A CH 1154865 A CH1154865 A CH 1154865A CH 466298 A CH466298 A CH 466298A
Authority
CH
Switzerland
Prior art keywords
isoquinolobenzodiazepine
derivatives
preparation
new
new isoquinolobenzodiazepine
Prior art date
Application number
CH1154865A
Other languages
German (de)
Inventor
Ott Hans
Original Assignee
Sandoz Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US388237A external-priority patent/US3369290A/en
Priority claimed from US478351A external-priority patent/US3383760A/en
Application filed by Sandoz Ag filed Critical Sandoz Ag
Publication of CH466298A publication Critical patent/CH466298A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D471/00Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/02Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
    • C07D471/04Ortho-condensed systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227Inductive arrangements or effects of, or between, wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074Stacked arrangements of non-apertured devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00Technologies relating to chemical industry
    • Y02P20/50Improvements relating to the production of bulk chemicals
    • Y02P20/55Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups
CH1154865A 1964-08-07 1965-08-17 Process for the preparation of new isoquinolobenzodiazepine derivatives CH466298A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US388237A US3369290A (en) 1964-08-07 1964-08-07 Method of making passivated semiconductor devices
US39173264A 1964-08-24 1964-08-24
US46255765A 1965-06-09 1965-06-09
US47797665A 1965-08-06 1965-08-06
US478351A US3383760A (en) 1965-08-09 1965-08-09 Method of making semiconductor devices

Publications (1)

Publication Number Publication Date
CH466298A true CH466298A (en) 1968-12-15

Family

ID=27541415

Family Applications (5)

Application Number Title Priority Date Filing Date
CH824468A CH460007A (en) 1964-08-07 1965-08-06 Process for the preparation of new isoquinoline derivatives
CH824368A CH460033A (en) 1964-08-07 1965-08-06 Process for the production of new diazepine derivatives
CH824568A CH460008A (en) 1964-08-07 1965-08-06 Process for the preparation of new isoquinoline derivatives
CH1112065A CH460031A (en) 1964-08-07 1965-08-06 Process for the production of new diazepine derivatives
CH1154865A CH466298A (en) 1964-08-07 1965-08-17 Process for the preparation of new isoquinolobenzodiazepine derivatives

Family Applications Before (4)

Application Number Title Priority Date Filing Date
CH824468A CH460007A (en) 1964-08-07 1965-08-06 Process for the preparation of new isoquinoline derivatives
CH824368A CH460033A (en) 1964-08-07 1965-08-06 Process for the production of new diazepine derivatives
CH824568A CH460008A (en) 1964-08-07 1965-08-06 Process for the preparation of new isoquinoline derivatives
CH1112065A CH460031A (en) 1964-08-07 1965-08-06 Process for the production of new diazepine derivatives

Country Status (17)

Country Link
BE (1) BE668687A (en)
BG (1) BG17566A3 (en)
BR (4) BR6572393D0 (en)
CA (1) CA953297A (en)
CH (5) CH460007A (en)
CY (1) CY613A (en)
DE (3) DE1514363B1 (en)
ES (1) ES337005A1 (en)
FI (1) FI46968C (en)
FR (2) FR5364M (en)
GB (7) GB1084598A (en)
IL (1) IL24214A (en)
MC (1) MC542A1 (en)
MY (1) MY7100223A (en)
NL (4) NL6510287A (en)
NO (1) NO120580B (en)
SE (5) SE312863B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116264B2 (en) * 1971-10-01 1976-05-22
EP0603971A3 (en) * 1992-12-23 1995-06-28 Koninkl Philips Electronics Nv Method of manufacturing a semiconductor device with passivated side and semiconductor device with passivated side.
EP0603973A3 (en) * 1992-12-23 1995-06-28 Philips Electronics Nv Method of manufacturing a semiconductor device provided with a number of pn junctions separated each time by depression, and semiconductor device provided with a number of pn junctions separated each time by a depression.
US5401690A (en) * 1993-07-08 1995-03-28 Goodark Electronic Corp. Method for making circular diode chips through glass passivation
GB201111217D0 (en) 2011-07-01 2011-08-17 Ash Gaming Ltd A system and method
US9570542B2 (en) * 2014-04-01 2017-02-14 Infineon Technologies Ag Semiconductor device including a vertical edge termination structure and method of manufacturing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865082A (en) * 1953-07-16 1958-12-23 Sylvania Electric Prod Semiconductor mount and method
NL255453A (en) * 1960-02-04
NL284599A (en) * 1961-05-26 1900-01-01

Also Published As

Publication number Publication date
BR6572394D0 (en) 1973-08-14
SE351641B (en) 1972-12-04
CH460033A (en) 1968-07-31
DE1620295B2 (en) 1974-10-03
SE345040B (en) 1972-05-08
GB1126352A (en) 1968-09-05
FR4985M (en) 1967-04-10
FI46968B (en) 1973-05-02
FR5364M (en) 1967-09-11
DE1620295A1 (en) 1970-02-19
BE668687A (en) 1966-02-23
SE350500B (en) 1972-10-30
GB1126354A (en) 1968-09-05
DE1620295C3 (en) 1975-05-22
CH460008A (en) 1968-07-31
BG17566A3 (en) 1973-11-10
SE312863B (en) 1969-07-28
NL6611133A (en) 1967-02-10
DE1564537A1 (en) 1970-07-30
NL6607936A (en) 1966-12-12
MY7100223A (en) 1971-12-31
GB1112334A (en) 1968-05-01
NO120580B (en) 1970-11-09
SE322227B (en) 1970-04-06
DE1564537B2 (en) 1973-01-25
BR6572393D0 (en) 1973-08-14
CH460031A (en) 1968-07-31
NL129867C (en) 1900-01-01
ES337005A1 (en) 1968-01-16
NL6510287A (en) 1966-02-08
MC542A1 (en) 1966-04-06
CY613A (en) 1971-10-01
IL24214A (en) 1969-06-25
GB1120488A (en) 1968-07-17
CA953297A (en) 1974-08-20
GB1084598A (en) 1967-09-27
BR6681707D0 (en) 1973-09-06
FI46968C (en) 1973-08-10
BR6680263D0 (en) 1973-03-01
DE1514363B1 (en) 1970-06-18
GB1126353A (en) 1968-09-05
GB1133376A (en) 1968-11-13
CH460007A (en) 1968-07-31
DE1620294A1 (en) 1970-02-05

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