GB1126354A - Novel tetrahydroisoquinoline derivatives - Google Patents

Novel tetrahydroisoquinoline derivatives

Info

Publication number
GB1126354A
GB1126354A GB3328/68A GB332868A GB1126354A GB 1126354 A GB1126354 A GB 1126354A GB 3328/68 A GB3328/68 A GB 3328/68A GB 332868 A GB332868 A GB 332868A GB 1126354 A GB1126354 A GB 1126354A
Authority
GB
United Kingdom
Prior art keywords
formula
compound
prepared
compounds
hydrogen atom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3328/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sandoz AG
Original Assignee
Sandoz AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US388237A external-priority patent/US3369290A/en
Priority claimed from US478351A external-priority patent/US3383760A/en
Application filed by Sandoz AG filed Critical Sandoz AG
Publication of GB1126354A publication Critical patent/GB1126354A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
    • C07D471/04—Ortho-condensed systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/55—Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups

Abstract

1,126,354. Tetrahydroisoquinoline derivatives. SANDOZ Ltd. 13 Aug., 1965 [24 Aug., 1964], No. 3328/68. Divided out of 1,126,352. Heading C2C. Racemic and optically active compounds of the general Formula (XII) (wherein each of R 1 and R 2 represents a hydrogen atom or a methoxy group, each of R 3 and R 4 represents a hydrogen atom or a methyl group, R<SP>1</SP> 6 represents a hydrogen atom or a C 1-4 alkyl group and X represents a chlorine atom or a trifluoromethyl group or-when R<SP>1</SP> 6 is an alkyl group-a hydrogen atom) and their acid addition salts are prepared by (a) reducing a racemic or optically active compound of the Formula (XI) or (b)-when R<SP>1</SP> 6 represents a hydrogen atom-reducing a racemic or optically active compound of the Formula (VII) optionally followed in either case by salt formation and/or resolution. Compounds (XI) may be prepared by (a) subjecting a compound of the Formula (X) to Bischler-Napieralski ring closure, the amino group being protected prior to ring closure and the protecting group removed after ring closure, or (b) reacting a compound of the Formula (XV) (wherein Hal represents a chlorine or bromine atom) with R<SP>1</SP> 6 NH 2 at 50-60‹ C. in the presence of copper powder and cuprous chloride. Compounds (X) may be prepared by condensing a compound of the Formula (IV) with a compound of the Formula (IXa) (wherein R represents a C 1-4 alkyl group) or (IXb) Compounds (VII) may be prepared by subjecting a compound of the Formula (VI) to Bischler-Napieralski ring closure. Compounds (VI) may be prepared by condensing a compound of the Formula (IV) with a compound of the Formula (V) in an alkaline medium. Compounds (XV) may be prepared by heating a compound of the Formula (XIII) with a compound of the Formula (XIV)
GB3328/68A 1964-08-07 1965-08-13 Novel tetrahydroisoquinoline derivatives Expired GB1126354A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US388237A US3369290A (en) 1964-08-07 1964-08-07 Method of making passivated semiconductor devices
US39173264A 1964-08-24 1964-08-24
US46255765A 1965-06-09 1965-06-09
US47797665A 1965-08-06 1965-08-06
US478351A US3383760A (en) 1965-08-09 1965-08-09 Method of making semiconductor devices

Publications (1)

Publication Number Publication Date
GB1126354A true GB1126354A (en) 1968-09-05

Family

ID=27541415

Family Applications (7)

Application Number Title Priority Date Filing Date
GB32673/65A Expired GB1084598A (en) 1964-08-07 1965-07-30 A method of making passivated semiconductor devices
GB34751/65A Expired GB1126352A (en) 1964-08-07 1965-08-13 Isoquinolinobenzodiazepine derivatives
GB3327/68A Expired GB1126353A (en) 1964-08-07 1965-08-13 Isoquinolinobenzodiazepine derivatives
GB3328/68A Expired GB1126354A (en) 1964-08-07 1965-08-13 Novel tetrahydroisoquinoline derivatives
GB36070/65A Expired GB1112334A (en) 1964-08-07 1965-08-23 Improvements in or relating to isoquinolo[2,1-d]benzo[1,4]diazepine derivatives
GB22856/66A Expired GB1133376A (en) 1964-08-07 1966-05-23 Semiconductor device and method of making same
GB30882/66A Expired GB1120488A (en) 1964-08-07 1966-07-08 A method of making semiconductor devices

Family Applications Before (3)

Application Number Title Priority Date Filing Date
GB32673/65A Expired GB1084598A (en) 1964-08-07 1965-07-30 A method of making passivated semiconductor devices
GB34751/65A Expired GB1126352A (en) 1964-08-07 1965-08-13 Isoquinolinobenzodiazepine derivatives
GB3327/68A Expired GB1126353A (en) 1964-08-07 1965-08-13 Isoquinolinobenzodiazepine derivatives

Family Applications After (3)

Application Number Title Priority Date Filing Date
GB36070/65A Expired GB1112334A (en) 1964-08-07 1965-08-23 Improvements in or relating to isoquinolo[2,1-d]benzo[1,4]diazepine derivatives
GB22856/66A Expired GB1133376A (en) 1964-08-07 1966-05-23 Semiconductor device and method of making same
GB30882/66A Expired GB1120488A (en) 1964-08-07 1966-07-08 A method of making semiconductor devices

Country Status (17)

Country Link
BE (1) BE668687A (en)
BG (1) BG17566A3 (en)
BR (4) BR6572393D0 (en)
CA (1) CA953297A (en)
CH (5) CH460033A (en)
CY (1) CY613A (en)
DE (3) DE1514363B1 (en)
ES (1) ES337005A1 (en)
FI (1) FI46968C (en)
FR (2) FR5364M (en)
GB (7) GB1084598A (en)
IL (1) IL24214A (en)
MC (1) MC542A1 (en)
MY (1) MY7100223A (en)
NL (4) NL6510287A (en)
NO (1) NO120580B (en)
SE (5) SE312863B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116264B2 (en) * 1971-10-01 1976-05-22
EP0603971A3 (en) * 1992-12-23 1995-06-28 Koninkl Philips Electronics Nv Method of manufacturing a semiconductor device with passivated side and semiconductor device with passivated side.
EP0603973A3 (en) * 1992-12-23 1995-06-28 Philips Electronics Nv Method of manufacturing a semiconductor device provided with a number of pn junctions separated each time by depression, and semiconductor device provided with a number of pn junctions separated each time by a depression.
US5401690A (en) * 1993-07-08 1995-03-28 Goodark Electronic Corp. Method for making circular diode chips through glass passivation
GB201111217D0 (en) 2011-07-01 2011-08-17 Ash Gaming Ltd A system and method
US9570542B2 (en) * 2014-04-01 2017-02-14 Infineon Technologies Ag Semiconductor device including a vertical edge termination structure and method of manufacturing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865082A (en) * 1953-07-16 1958-12-23 Sylvania Electric Prod Semiconductor mount and method
NL120075C (en) * 1960-02-04
NL284599A (en) * 1961-05-26 1900-01-01

Also Published As

Publication number Publication date
FR5364M (en) 1967-09-11
CH460031A (en) 1968-07-31
SE322227B (en) 1970-04-06
FI46968C (en) 1973-08-10
GB1133376A (en) 1968-11-13
DE1620295B2 (en) 1974-10-03
BR6572393D0 (en) 1973-08-14
FI46968B (en) 1973-05-02
DE1620294A1 (en) 1970-02-05
BR6681707D0 (en) 1973-09-06
NL129867C (en) 1900-01-01
DE1620295C3 (en) 1975-05-22
GB1112334A (en) 1968-05-01
DE1564537A1 (en) 1970-07-30
BE668687A (en) 1966-02-23
CY613A (en) 1971-10-01
FR4985M (en) 1967-04-10
GB1120488A (en) 1968-07-17
GB1084598A (en) 1967-09-27
ES337005A1 (en) 1968-01-16
NL6510287A (en) 1966-02-08
BR6572394D0 (en) 1973-08-14
CH460033A (en) 1968-07-31
BR6680263D0 (en) 1973-03-01
NL6607936A (en) 1966-12-12
CH460008A (en) 1968-07-31
BG17566A3 (en) 1973-11-10
MC542A1 (en) 1966-04-06
IL24214A (en) 1969-06-25
DE1564537B2 (en) 1973-01-25
SE350500B (en) 1972-10-30
NL6611133A (en) 1967-02-10
SE312863B (en) 1969-07-28
SE345040B (en) 1972-05-08
CH466298A (en) 1968-12-15
DE1514363B1 (en) 1970-06-18
CH460007A (en) 1968-07-31
GB1126353A (en) 1968-09-05
DE1620295A1 (en) 1970-02-19
CA953297A (en) 1974-08-20
NO120580B (en) 1970-11-09
GB1126352A (en) 1968-09-05
SE351641B (en) 1972-12-04
MY7100223A (en) 1971-12-31

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