DE1514363B1 - Verfahren zum Herstellen von passivierten Halbleiterbauelementen - Google Patents

Verfahren zum Herstellen von passivierten Halbleiterbauelementen

Info

Publication number
DE1514363B1
DE1514363B1 DE19651514363 DE1514363A DE1514363B1 DE 1514363 B1 DE1514363 B1 DE 1514363B1 DE 19651514363 DE19651514363 DE 19651514363 DE 1514363 A DE1514363 A DE 1514363A DE 1514363 B1 DE1514363 B1 DE 1514363B1
Authority
DE
Germany
Prior art keywords
semiconductor
grooves
semiconductor wafer
layer
attached
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19651514363
Other languages
German (de)
English (en)
Inventor
Eric Frederick Cavc
Alfred Mayer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US388237A external-priority patent/US3369290A/en
Application filed by RCA Corp filed Critical RCA Corp
Priority claimed from US478351A external-priority patent/US3383760A/en
Publication of DE1514363B1 publication Critical patent/DE1514363B1/de
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D471/00Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/02Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
    • C07D471/04Ortho-condensed systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227Inductive arrangements or effects of, or between, wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/074Stacked arrangements of non-apertured devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00Technologies relating to chemical industry
    • Y02P20/50Improvements relating to the production of bulk chemicals
    • Y02P20/55Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Die Bonding (AREA)
  • Rectifiers (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Thyristors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
DE19651514363 1964-08-07 1965-08-06 Verfahren zum Herstellen von passivierten Halbleiterbauelementen Pending DE1514363B1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US388237A US3369290A (en) 1964-08-07 1964-08-07 Method of making passivated semiconductor devices
US39173264A 1964-08-24 1964-08-24
US46255765A 1965-06-09 1965-06-09
US47797665A 1965-08-06 1965-08-06
US478351A US3383760A (en) 1965-08-09 1965-08-09 Method of making semiconductor devices

Publications (1)

Publication Number Publication Date
DE1514363B1 true DE1514363B1 (de) 1970-06-18

Family

ID=27541415

Family Applications (3)

Application Number Title Priority Date Filing Date
DE19651514363 Pending DE1514363B1 (de) 1964-08-07 1965-08-06 Verfahren zum Herstellen von passivierten Halbleiterbauelementen
DE1620295A Expired DE1620295C3 (de) 1964-08-07 1965-08-20 Isochinolo eckige Klammer auf 2,1-d eckige Klammer zu benzo eckige Klammer auf 1,4 eckige Klammer zu diazepin-6-one
DE19651620294 Pending DE1620294A1 (de) 1964-08-07 1965-08-20 Neue heterocyclische Verbindungen

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE1620295A Expired DE1620295C3 (de) 1964-08-07 1965-08-20 Isochinolo eckige Klammer auf 2,1-d eckige Klammer zu benzo eckige Klammer auf 1,4 eckige Klammer zu diazepin-6-one
DE19651620294 Pending DE1620294A1 (de) 1964-08-07 1965-08-20 Neue heterocyclische Verbindungen

Country Status (17)

Country Link
BE (1) BE668687A (enrdf_load_stackoverflow)
BG (1) BG17566A3 (enrdf_load_stackoverflow)
BR (4) BR6572394D0 (enrdf_load_stackoverflow)
CA (1) CA953297A (enrdf_load_stackoverflow)
CH (5) CH460008A (enrdf_load_stackoverflow)
CY (1) CY613A (enrdf_load_stackoverflow)
DE (3) DE1514363B1 (enrdf_load_stackoverflow)
ES (1) ES337005A1 (enrdf_load_stackoverflow)
FI (1) FI46968C (enrdf_load_stackoverflow)
FR (2) FR5364M (enrdf_load_stackoverflow)
GB (7) GB1084598A (enrdf_load_stackoverflow)
IL (1) IL24214A (enrdf_load_stackoverflow)
MC (1) MC542A1 (enrdf_load_stackoverflow)
MY (1) MY7100223A (enrdf_load_stackoverflow)
NL (4) NL6510287A (enrdf_load_stackoverflow)
NO (1) NO120580B (enrdf_load_stackoverflow)
SE (5) SE312863B (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0603973A3 (en) * 1992-12-23 1995-06-28 Philips Electronics Nv Semiconductor component having p-n junctions separated by trenches and its manufacturing process.
EP0603971A3 (en) * 1992-12-23 1995-06-28 Koninkl Philips Electronics Nv Semiconductor device with passivated sides and method for manufacturing it.
EP0690495A1 (en) * 1994-04-21 1996-01-03 Goodark Electronic Corp. Method for making circular diode chips through glass passivation

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116264B2 (enrdf_load_stackoverflow) 1971-10-01 1976-05-22
FR2328286A1 (fr) 1975-10-14 1977-05-13 Thomson Csf Procede de fabrication de dispositifs a semiconducteurs, presentant une tres faible resistance thermique, et dispositifs obtenus par ledit procede
GB201111217D0 (en) 2011-07-01 2011-08-17 Ash Gaming Ltd A system and method
US9570542B2 (en) * 2014-04-01 2017-02-14 Infineon Technologies Ag Semiconductor device including a vertical edge termination structure and method of manufacturing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865082A (en) * 1953-07-16 1958-12-23 Sylvania Electric Prod Semiconductor mount and method
DE1114938B (de) * 1960-02-04 1961-10-12 Intermetall Verfahren zur gleichzeitigen Herstellung mehrerer flaechenhafter Halbleiter-anordnungen, insbesondere von Hochfrequenz-Transistoren mit moeglichst duennen Kollektorzonen
DE1173994B (de) * 1961-05-26 1964-07-16 Standard Elektrik Lorenz Ag Verfahren zur Herstellung von elektrischen Halbleiteranordnungen

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865082A (en) * 1953-07-16 1958-12-23 Sylvania Electric Prod Semiconductor mount and method
DE1114938B (de) * 1960-02-04 1961-10-12 Intermetall Verfahren zur gleichzeitigen Herstellung mehrerer flaechenhafter Halbleiter-anordnungen, insbesondere von Hochfrequenz-Transistoren mit moeglichst duennen Kollektorzonen
DE1173994B (de) * 1961-05-26 1964-07-16 Standard Elektrik Lorenz Ag Verfahren zur Herstellung von elektrischen Halbleiteranordnungen

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0603973A3 (en) * 1992-12-23 1995-06-28 Philips Electronics Nv Semiconductor component having p-n junctions separated by trenches and its manufacturing process.
EP0603971A3 (en) * 1992-12-23 1995-06-28 Koninkl Philips Electronics Nv Semiconductor device with passivated sides and method for manufacturing it.
EP0690495A1 (en) * 1994-04-21 1996-01-03 Goodark Electronic Corp. Method for making circular diode chips through glass passivation

Also Published As

Publication number Publication date
FR5364M (enrdf_load_stackoverflow) 1967-09-11
NL6607936A (enrdf_load_stackoverflow) 1966-12-12
MC542A1 (fr) 1966-04-06
DE1620295B2 (de) 1974-10-03
SE350500B (enrdf_load_stackoverflow) 1972-10-30
GB1084598A (en) 1967-09-27
NL6510287A (enrdf_load_stackoverflow) 1966-02-08
BR6572393D0 (pt) 1973-08-14
CH460007A (de) 1968-07-31
CH460008A (de) 1968-07-31
GB1126352A (en) 1968-09-05
GB1120488A (en) 1968-07-17
CA953297A (en) 1974-08-20
DE1620294A1 (de) 1970-02-05
NO120580B (enrdf_load_stackoverflow) 1970-11-09
DE1564537A1 (de) 1970-07-30
NL6611133A (enrdf_load_stackoverflow) 1967-02-10
DE1564537B2 (de) 1973-01-25
MY7100223A (en) 1971-12-31
NL129867C (enrdf_load_stackoverflow) 1900-01-01
BR6681707D0 (pt) 1973-09-06
GB1126354A (en) 1968-09-05
CH460031A (de) 1968-07-31
BE668687A (enrdf_load_stackoverflow) 1966-02-23
SE322227B (enrdf_load_stackoverflow) 1970-04-06
ES337005A1 (es) 1968-01-16
CH466298A (de) 1968-12-15
GB1133376A (en) 1968-11-13
DE1620295C3 (de) 1975-05-22
SE312863B (enrdf_load_stackoverflow) 1969-07-28
BR6680263D0 (pt) 1973-03-01
SE351641B (enrdf_load_stackoverflow) 1972-12-04
CH460033A (de) 1968-07-31
GB1112334A (en) 1968-05-01
BG17566A3 (bg) 1973-11-10
BR6572394D0 (pt) 1973-08-14
IL24214A (en) 1969-06-25
GB1126353A (en) 1968-09-05
FR4985M (enrdf_load_stackoverflow) 1967-04-10
DE1620295A1 (de) 1970-02-19
SE345040B (enrdf_load_stackoverflow) 1972-05-08
FI46968B (enrdf_load_stackoverflow) 1973-05-02
FI46968C (fi) 1973-08-10
CY613A (en) 1971-10-01

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