FI46968C - Analogiamenetelmä terapeuttisesti aktiivisten 5,6,7,9,10,14b-heksahydr o-isokinolo/2,1-d/bentso/1,4/diatsepiinien valmistamiseksi - Google Patents

Analogiamenetelmä terapeuttisesti aktiivisten 5,6,7,9,10,14b-heksahydr o-isokinolo/2,1-d/bentso/1,4/diatsepiinien valmistamiseksi

Info

Publication number
FI46968C
FI46968C FI652007A FI200765A FI46968C FI 46968 C FI46968 C FI 46968C FI 652007 A FI652007 A FI 652007A FI 200765 A FI200765 A FI 200765A FI 46968 C FI46968 C FI 46968C
Authority
FI
Finland
Prior art keywords
isoquinolo
diazepines
hexahydro
benzo
preparation
Prior art date
Application number
FI652007A
Other languages
English (en)
Finnish (fi)
Swedish (sv)
Other versions
FI46968B (enrdf_load_stackoverflow
Inventor
Hans Ott
Original Assignee
Sandoz Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US388237A external-priority patent/US3369290A/en
Priority claimed from US478351A external-priority patent/US3383760A/en
Application filed by Sandoz Ag filed Critical Sandoz Ag
Priority to FI25173A priority Critical patent/FI49620C/fi
Application granted granted Critical
Publication of FI46968B publication Critical patent/FI46968B/fi
Publication of FI46968C publication Critical patent/FI46968C/fi

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D471/00Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/02Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
    • C07D471/04Ortho-condensed systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227Inductive arrangements or effects of, or between, wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/074Stacked arrangements of non-apertured devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00Technologies relating to chemical industry
    • Y02P20/50Improvements relating to the production of bulk chemicals
    • Y02P20/55Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Die Bonding (AREA)
  • Rectifiers (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Thyristors (AREA)
FI652007A 1964-08-07 1965-08-23 Analogiamenetelmä terapeuttisesti aktiivisten 5,6,7,9,10,14b-heksahydr o-isokinolo/2,1-d/bentso/1,4/diatsepiinien valmistamiseksi FI46968C (fi)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FI25173A FI49620C (fi) 1964-08-07 1973-01-29 Analogiamenetelmä terapeuttisesti aktiivisten 5,6,7,9,10,14b-heksahydr o-isokinolo-/2,1-d/bentso/1,4/diatsepiini-6-oni-yhdisteiden valmistami seksi.

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US388237A US3369290A (en) 1964-08-07 1964-08-07 Method of making passivated semiconductor devices
US39173264A 1964-08-24 1964-08-24
US46255765A 1965-06-09 1965-06-09
US47797665A 1965-08-06 1965-08-06
US478351A US3383760A (en) 1965-08-09 1965-08-09 Method of making semiconductor devices

Publications (2)

Publication Number Publication Date
FI46968B FI46968B (enrdf_load_stackoverflow) 1973-05-02
FI46968C true FI46968C (fi) 1973-08-10

Family

ID=27541415

Family Applications (1)

Application Number Title Priority Date Filing Date
FI652007A FI46968C (fi) 1964-08-07 1965-08-23 Analogiamenetelmä terapeuttisesti aktiivisten 5,6,7,9,10,14b-heksahydr o-isokinolo/2,1-d/bentso/1,4/diatsepiinien valmistamiseksi

Country Status (17)

Country Link
BE (1) BE668687A (enrdf_load_stackoverflow)
BG (1) BG17566A3 (enrdf_load_stackoverflow)
BR (4) BR6572393D0 (enrdf_load_stackoverflow)
CA (1) CA953297A (enrdf_load_stackoverflow)
CH (5) CH460033A (enrdf_load_stackoverflow)
CY (1) CY613A (enrdf_load_stackoverflow)
DE (3) DE1514363B1 (enrdf_load_stackoverflow)
ES (1) ES337005A1 (enrdf_load_stackoverflow)
FI (1) FI46968C (enrdf_load_stackoverflow)
FR (2) FR4985M (enrdf_load_stackoverflow)
GB (7) GB1084598A (enrdf_load_stackoverflow)
IL (1) IL24214A (enrdf_load_stackoverflow)
MC (1) MC542A1 (enrdf_load_stackoverflow)
MY (1) MY7100223A (enrdf_load_stackoverflow)
NL (4) NL6510287A (enrdf_load_stackoverflow)
NO (1) NO120580B (enrdf_load_stackoverflow)
SE (5) SE312863B (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116264B2 (enrdf_load_stackoverflow) 1971-10-01 1976-05-22
FR2328286A1 (fr) 1975-10-14 1977-05-13 Thomson Csf Procede de fabrication de dispositifs a semiconducteurs, presentant une tres faible resistance thermique, et dispositifs obtenus par ledit procede
EP0603973A3 (en) * 1992-12-23 1995-06-28 Philips Electronics Nv Semiconductor component having p-n junctions separated by trenches and its manufacturing process.
EP0603971A3 (en) * 1992-12-23 1995-06-28 Koninkl Philips Electronics Nv Semiconductor device with passivated sides and method for manufacturing it.
US5401690A (en) * 1993-07-08 1995-03-28 Goodark Electronic Corp. Method for making circular diode chips through glass passivation
GB201111217D0 (en) 2011-07-01 2011-08-17 Ash Gaming Ltd A system and method
US9570542B2 (en) * 2014-04-01 2017-02-14 Infineon Technologies Ag Semiconductor device including a vertical edge termination structure and method of manufacturing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865082A (en) * 1953-07-16 1958-12-23 Sylvania Electric Prod Semiconductor mount and method
NL120075C (enrdf_load_stackoverflow) * 1960-02-04
NL284599A (enrdf_load_stackoverflow) * 1961-05-26 1900-01-01

Also Published As

Publication number Publication date
BE668687A (enrdf_load_stackoverflow) 1966-02-23
SE312863B (enrdf_load_stackoverflow) 1969-07-28
GB1133376A (en) 1968-11-13
GB1112334A (en) 1968-05-01
SE345040B (enrdf_load_stackoverflow) 1972-05-08
NL6611133A (enrdf_load_stackoverflow) 1967-02-10
DE1620294A1 (de) 1970-02-05
GB1120488A (en) 1968-07-17
IL24214A (en) 1969-06-25
ES337005A1 (es) 1968-01-16
DE1620295C3 (de) 1975-05-22
GB1126353A (en) 1968-09-05
DE1620295B2 (de) 1974-10-03
BG17566A3 (bg) 1973-11-10
FR4985M (enrdf_load_stackoverflow) 1967-04-10
DE1514363B1 (de) 1970-06-18
NL6510287A (enrdf_load_stackoverflow) 1966-02-08
DE1620295A1 (de) 1970-02-19
FR5364M (enrdf_load_stackoverflow) 1967-09-11
GB1084598A (en) 1967-09-27
MY7100223A (en) 1971-12-31
NL129867C (enrdf_load_stackoverflow) 1900-01-01
SE350500B (enrdf_load_stackoverflow) 1972-10-30
DE1564537B2 (de) 1973-01-25
CY613A (en) 1971-10-01
NL6607936A (enrdf_load_stackoverflow) 1966-12-12
DE1564537A1 (de) 1970-07-30
CH466298A (de) 1968-12-15
CH460033A (de) 1968-07-31
FI46968B (enrdf_load_stackoverflow) 1973-05-02
MC542A1 (fr) 1966-04-06
CH460008A (de) 1968-07-31
CH460007A (de) 1968-07-31
NO120580B (enrdf_load_stackoverflow) 1970-11-09
BR6681707D0 (pt) 1973-09-06
BR6572394D0 (pt) 1973-08-14
CH460031A (de) 1968-07-31
SE322227B (enrdf_load_stackoverflow) 1970-04-06
BR6572393D0 (pt) 1973-08-14
SE351641B (enrdf_load_stackoverflow) 1972-12-04
BR6680263D0 (pt) 1973-03-01
GB1126354A (en) 1968-09-05
CA953297A (en) 1974-08-20
GB1126352A (en) 1968-09-05

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