DE1489250C3 - Transistor mit mehreren emitterzonen - Google Patents

Transistor mit mehreren emitterzonen

Info

Publication number
DE1489250C3
DE1489250C3 DE1489250A DE1489250A DE1489250C3 DE 1489250 C3 DE1489250 C3 DE 1489250C3 DE 1489250 A DE1489250 A DE 1489250A DE 1489250 A DE1489250 A DE 1489250A DE 1489250 C3 DE1489250 C3 DE 1489250C3
Authority
DE
Germany
Prior art keywords
base
emitter
zone
electrode
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1489250A
Other languages
German (de)
English (en)
Other versions
DE1489250A1 (de
DE1489250B2 (de
Inventor
Donald Raymond Sommerville N.J. Carley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE1489250A1 publication Critical patent/DE1489250A1/de
Publication of DE1489250B2 publication Critical patent/DE1489250B2/de
Application granted granted Critical
Publication of DE1489250C3 publication Critical patent/DE1489250C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H10D10/058—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Bipolar Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE1489250A 1963-10-24 1964-10-21 Transistor mit mehreren emitterzonen Expired DE1489250C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31867863A 1963-10-24 1963-10-24

Publications (3)

Publication Number Publication Date
DE1489250A1 DE1489250A1 (de) 1972-04-27
DE1489250B2 DE1489250B2 (de) 1974-02-21
DE1489250C3 true DE1489250C3 (de) 1981-07-02

Family

ID=23239151

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1489250A Expired DE1489250C3 (de) 1963-10-24 1964-10-21 Transistor mit mehreren emitterzonen

Country Status (8)

Country Link
US (1) US3434019A (enExample)
JP (1) JPS4844274B1 (enExample)
BE (1) BE654804A (enExample)
DE (1) DE1489250C3 (enExample)
ES (1) ES305219A1 (enExample)
GB (1) GB1072778A (enExample)
NL (2) NL6412351A (enExample)
SE (1) SE300659B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5039105Y1 (enExample) * 1969-04-08 1975-11-11
US3582726A (en) * 1969-09-03 1971-06-01 Microwave Semiconductor Corp High frequency power transistor having a plurality of discrete base areas
US3675092A (en) * 1970-07-13 1972-07-04 Signetics Corp Surface controlled avalanche semiconductor device
JPS5258379A (en) * 1975-11-08 1977-05-13 Toshiba Corp Production of semiconductor element
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
JPS56162864A (en) * 1980-05-19 1981-12-15 Hitachi Ltd Semiconductor device
IT1250233B (it) * 1991-11-29 1995-04-03 St Microelectronics Srl Procedimento per la fabbricazione di circuiti integrati in tecnologia mos.
DE69321966T2 (de) * 1993-12-24 1999-06-02 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Leistungs-Halbleiterbauelement
DE69321965T2 (de) * 1993-12-24 1999-06-02 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania MOS-Leistungs-Chip-Typ und Packungszusammenbau
US5798287A (en) * 1993-12-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Method for forming a power MOS device chip
EP0661735B1 (en) * 1993-12-29 2001-03-07 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Process for the manufacturing of integrated circuits, particularly of intelligent power semiconductor devices
EP0697728B1 (en) * 1994-08-02 1999-04-21 STMicroelectronics S.r.l. MOS-technology power device chip and package assembly
JP5979994B2 (ja) * 2012-06-12 2016-08-31 新光電気工業株式会社 電子装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL233303A (enExample) * 1957-11-30
DE1130523B (de) * 1958-01-22 1962-05-30 Siemens Ag Anordnung mit mindestens drei pnp-bzw. npn-Flaechentransistoren
US3044147A (en) * 1959-04-21 1962-07-17 Pacific Semiconductors Inc Semiconductor technology method of contacting a body
US3174112A (en) * 1960-07-29 1965-03-16 Westinghouse Electric Corp Semiconductor devices providing the functions of a plurality of conventional components
BE621451A (enExample) * 1961-08-16
US3210620A (en) * 1961-10-04 1965-10-05 Westinghouse Electric Corp Semiconductor device providing diode functions
US3223904A (en) * 1962-02-19 1965-12-14 Motorola Inc Field effect device and method of manufacturing the same
US3214652A (en) * 1962-03-19 1965-10-26 Motorola Inc Transistor comprising prong-shaped emitter electrode
US3183128A (en) * 1962-06-11 1965-05-11 Fairchild Camera Instr Co Method of making field-effect transistors
NL128995C (enExample) * 1962-08-03
NL297002A (enExample) * 1962-08-23 1900-01-01
US3191070A (en) * 1963-01-21 1965-06-22 Fairchild Camera Instr Co Transistor agg device

Also Published As

Publication number Publication date
US3434019A (en) 1969-03-18
BE654804A (enExample) 1965-02-15
SE300659B (enExample) 1968-05-06
NL136562C (enExample)
NL6412351A (enExample) 1965-04-26
DE1489250A1 (de) 1972-04-27
ES305219A1 (es) 1965-03-16
DE1489250B2 (de) 1974-02-21
JPS4844274B1 (enExample) 1973-12-24
GB1072778A (en) 1967-06-21

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)