DE1289830B - Verfahren zum Herstellen epitaktischer Aufwachsschichten aus halbleitenden A B-Verbindungen - Google Patents

Verfahren zum Herstellen epitaktischer Aufwachsschichten aus halbleitenden A B-Verbindungen

Info

Publication number
DE1289830B
DE1289830B DES98675A DES0098675A DE1289830B DE 1289830 B DE1289830 B DE 1289830B DE S98675 A DES98675 A DE S98675A DE S0098675 A DES0098675 A DE S0098675A DE 1289830 B DE1289830 B DE 1289830B
Authority
DE
Germany
Prior art keywords
ammonia
reaction gas
reaction
substrate
water vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DES98675A
Other languages
German (de)
English (en)
Inventor
Dersin
Dipl-Chem Dr Hans
Lochner Horst Paul
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES98675A priority Critical patent/DE1289830B/de
Priority to NL6610520A priority patent/NL6610520A/xx
Priority to FR71411A priority patent/FR1488038A/fr
Priority to US570010A priority patent/US3461004A/en
Priority to AT744566A priority patent/AT261679B/de
Priority to CH1121366A priority patent/CH476516A/de
Priority to GB34893/66A priority patent/GB1149215A/en
Priority to SE10680/66A priority patent/SE300812B/xx
Publication of DE1289830B publication Critical patent/DE1289830B/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/052—Face to face deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DES98675A 1965-08-05 1965-08-05 Verfahren zum Herstellen epitaktischer Aufwachsschichten aus halbleitenden A B-Verbindungen Withdrawn DE1289830B (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DES98675A DE1289830B (de) 1965-08-05 1965-08-05 Verfahren zum Herstellen epitaktischer Aufwachsschichten aus halbleitenden A B-Verbindungen
NL6610520A NL6610520A (enExample) 1965-08-05 1966-07-26
FR71411A FR1488038A (fr) 1965-08-05 1966-07-29 Procédé de fabrication de couches épitaxiales à partir de composés semi-conducteurs
US570010A US3461004A (en) 1965-08-05 1966-08-03 Method of epitaxially growing layers of semiconducting compounds
AT744566A AT261679B (de) 1965-08-05 1966-08-03 Verfahren zum Herstellen epitaktischer Aufwachsschichten aus halbleitenden Verbindungen
CH1121366A CH476516A (de) 1965-08-05 1966-08-03 Verfahren zum Herstellen epitaktischer Aufwachsschichten aus halbleitenden Verbindungen
GB34893/66A GB1149215A (en) 1965-08-05 1966-08-04 Improvements in or relating to the manufacture of epitaxially grown layers of semiconductor compounds
SE10680/66A SE300812B (enExample) 1965-08-05 1966-08-05

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES98675A DE1289830B (de) 1965-08-05 1965-08-05 Verfahren zum Herstellen epitaktischer Aufwachsschichten aus halbleitenden A B-Verbindungen

Publications (1)

Publication Number Publication Date
DE1289830B true DE1289830B (de) 1969-02-27

Family

ID=7521643

Family Applications (1)

Application Number Title Priority Date Filing Date
DES98675A Withdrawn DE1289830B (de) 1965-08-05 1965-08-05 Verfahren zum Herstellen epitaktischer Aufwachsschichten aus halbleitenden A B-Verbindungen

Country Status (7)

Country Link
US (1) US3461004A (enExample)
AT (1) AT261679B (enExample)
CH (1) CH476516A (enExample)
DE (1) DE1289830B (enExample)
GB (1) GB1149215A (enExample)
NL (1) NL6610520A (enExample)
SE (1) SE300812B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152182A (en) * 1978-05-15 1979-05-01 International Business Machines Corporation Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide
US4253887A (en) * 1979-08-27 1981-03-03 Rca Corporation Method of depositing layers of semi-insulating gallium arsenide
US4957780A (en) * 1987-01-20 1990-09-18 Gte Laboratories Incorporated Internal reactor method for chemical vapor deposition

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL268294A (enExample) * 1960-10-10
DE1250789B (de) * 1962-07-09 1967-09-28 Western Electric Company Incorporated, New York, N.Y. (V. St. A.) Verfahren zum Züchten eines epitaktisch gewachsenen Einkristalles mit Hilfe einer Transportreaktion
NL296876A (enExample) * 1962-08-23
US3322501A (en) * 1964-07-24 1967-05-30 Ibm Preparation of gallium arsenide with controlled silicon concentrations
US3397094A (en) * 1965-03-25 1968-08-13 James E. Webb Method of changing the conductivity of vapor deposited gallium arsenide by the introduction of water into the vapor deposition atmosphere

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Also Published As

Publication number Publication date
AT261679B (de) 1968-05-10
US3461004A (en) 1969-08-12
GB1149215A (en) 1969-04-16
SE300812B (enExample) 1968-05-13
CH476516A (de) 1969-08-15
NL6610520A (enExample) 1967-02-06

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Legal Events

Date Code Title Description
E771 Valid patent as to the heymanns-index 1977, willingness to grant licences
EHJ Ceased/non-payment of the annual fee