SE300812B - - Google Patents

Info

Publication number
SE300812B
SE300812B SE10680/66A SE1068066A SE300812B SE 300812 B SE300812 B SE 300812B SE 10680/66 A SE10680/66 A SE 10680/66A SE 1068066 A SE1068066 A SE 1068066A SE 300812 B SE300812 B SE 300812B
Authority
SE
Sweden
Prior art keywords
compound
reaction gas
carrier
gaas
transport
Prior art date
Application number
SE10680/66A
Other languages
English (en)
Inventor
H Lochner
H Dersin
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE300812B publication Critical patent/SE300812B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/052—Face to face deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SE10680/66A 1965-08-05 1966-08-05 SE300812B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES98675A DE1289830B (de) 1965-08-05 1965-08-05 Verfahren zum Herstellen epitaktischer Aufwachsschichten aus halbleitenden A B-Verbindungen

Publications (1)

Publication Number Publication Date
SE300812B true SE300812B (xx) 1968-05-13

Family

ID=7521643

Family Applications (1)

Application Number Title Priority Date Filing Date
SE10680/66A SE300812B (xx) 1965-08-05 1966-08-05

Country Status (7)

Country Link
US (1) US3461004A (xx)
AT (1) AT261679B (xx)
CH (1) CH476516A (xx)
DE (1) DE1289830B (xx)
GB (1) GB1149215A (xx)
NL (1) NL6610520A (xx)
SE (1) SE300812B (xx)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152182A (en) * 1978-05-15 1979-05-01 International Business Machines Corporation Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide
US4253887A (en) * 1979-08-27 1981-03-03 Rca Corporation Method of depositing layers of semi-insulating gallium arsenide
US4957780A (en) * 1987-01-20 1990-09-18 Gte Laboratories Incorporated Internal reactor method for chemical vapor deposition

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL268294A (xx) * 1960-10-10
NL292373A (xx) * 1962-07-09
NL296876A (xx) * 1962-08-23
US3322501A (en) * 1964-07-24 1967-05-30 Ibm Preparation of gallium arsenide with controlled silicon concentrations
US3397094A (en) * 1965-03-25 1968-08-13 James E. Webb Method of changing the conductivity of vapor deposited gallium arsenide by the introduction of water into the vapor deposition atmosphere

Also Published As

Publication number Publication date
CH476516A (de) 1969-08-15
GB1149215A (en) 1969-04-16
DE1289830B (de) 1969-02-27
US3461004A (en) 1969-08-12
AT261679B (de) 1968-05-10
NL6610520A (xx) 1967-02-06

Similar Documents

Publication Publication Date Title
GB916888A (en) Improvements in and relating to the epitaxial deposition of semi-conductor material
GB1346323A (en) Process for producing semiconductor nitride films
GB1319311A (en) Epitaxial composite and method of making
GB1148659A (en) Method and apparatus for preparing group iii-v materials
GB1266444A (xx)
GB1176691A (en) High Resistivity Compounds and Alloys and Methods of Making Same.
NL6610520A (xx)
GB1042933A (en) Methods of growing crystals of gallium arsenide, gallium phosphide or mixtures thereof
GB1387023A (en) Vapour deposition
GB1206468A (en) Method of manufacturing silicon nitride powder
GB1328170A (en) Epitaxial deposition
GB1529081A (en) Gallium arsenide impatt diodes
GB1342542A (en) Epitaxial deposition
GB1002528A (en) Manufacture of semiconductive bodies
GB1473485A (en) Method for growing crystals of iii-v compound semicon ductors
GB1143255A (en) Vapour polishing
GB1179836A (en) Improvements in and relating to the production of gallium arsenide films
GB1193739A (en) Process for the Production of Alkoxy Silanes
JPS497992B1 (xx)
GB1319560A (en) Epitaxial composite and method of making
GB1237952A (xx)
Curtis et al. The preparation and growth of polycrystalline layers of ZnSiP2 in an open flow system
GB1368660A (en) Process for preparing gaas1-xpx crystal
JPS58140400A (ja) 砒化ガリウム気相成長方法
GB1160162A (en) Apparatus and method for production of Epitaxial Films