DE1266609B - Verfahren zur Herstellung von insbesondere aus Siliciummonoxyd bestehenden Diffusions- und Legierungsmasken auf Halbleiteroberflaechen durch Aufdampfen im Vakuum - Google Patents
Verfahren zur Herstellung von insbesondere aus Siliciummonoxyd bestehenden Diffusions- und Legierungsmasken auf Halbleiteroberflaechen durch Aufdampfen im VakuumInfo
- Publication number
- DE1266609B DE1266609B DEJ22251A DEJ0022251A DE1266609B DE 1266609 B DE1266609 B DE 1266609B DE J22251 A DEJ22251 A DE J22251A DE J0022251 A DEJ0022251 A DE J0022251A DE 1266609 B DE1266609 B DE 1266609B
- Authority
- DE
- Germany
- Prior art keywords
- layer
- semiconductor
- silicon monoxide
- silicon
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 title claims description 58
- 239000004065 semiconductor Substances 0.000 title claims description 50
- 238000000034 method Methods 0.000 title claims description 38
- 230000008569 process Effects 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000009792 diffusion process Methods 0.000 title claims description 12
- 238000007740 vapor deposition Methods 0.000 title claims description 9
- 239000000956 alloy Substances 0.000 title claims description 7
- 229910045601 alloy Inorganic materials 0.000 title description 6
- 239000000463 material Substances 0.000 claims description 23
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 8
- 239000011780 sodium chloride Substances 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 4
- 150000004820 halides Chemical class 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910000676 Si alloy Inorganic materials 0.000 claims 1
- 238000000576 coating method Methods 0.000 description 25
- 239000011248 coating agent Substances 0.000 description 24
- 235000012431 wafers Nutrition 0.000 description 15
- 150000003839 salts Chemical class 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005275 alloying Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229920000298 Cellophane Polymers 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004063 acid-resistant material Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02269—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by thermal evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US131771A US3144366A (en) | 1961-08-16 | 1961-08-16 | Method of fabricating a plurality of pn junctions in a semiconductor body |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1266609B true DE1266609B (de) | 1968-04-18 |
Family
ID=22450959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEJ22251A Pending DE1266609B (de) | 1961-08-16 | 1962-08-14 | Verfahren zur Herstellung von insbesondere aus Siliciummonoxyd bestehenden Diffusions- und Legierungsmasken auf Halbleiteroberflaechen durch Aufdampfen im Vakuum |
Country Status (6)
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3377215A (en) * | 1961-09-29 | 1968-04-09 | Texas Instruments Inc | Diode array |
GB1052379A (US07122603-20061017-C00294.png) * | 1963-03-28 | 1900-01-01 | ||
US3291640A (en) * | 1963-05-27 | 1966-12-13 | Chemclean Corp | Ultrasonic cleaning process |
DE1290925B (de) * | 1963-06-10 | 1969-03-20 | Philips Nv | Verfahren zum Abscheiden von Silicium auf einem Halbleiterkoerper |
NL136562C (US07122603-20061017-C00294.png) * | 1963-10-24 | |||
US3352726A (en) * | 1964-04-13 | 1967-11-14 | Philco Ford Corp | Method of fabricating planar semiconductor devices |
US3477886A (en) * | 1964-12-07 | 1969-11-11 | Motorola Inc | Controlled diffusions in semiconductive materials |
US3372071A (en) * | 1965-06-30 | 1968-03-05 | Texas Instruments Inc | Method of forming a small area junction semiconductor |
US3447238A (en) * | 1965-08-09 | 1969-06-03 | Raytheon Co | Method of making a field effect transistor by diffusion,coating with an oxide and placing a metal layer on the oxide |
US3391035A (en) * | 1965-08-20 | 1968-07-02 | Westinghouse Electric Corp | Method of making p-nu-junction devices by diffusion |
US3347720A (en) * | 1965-10-21 | 1967-10-17 | Bendix Corp | Method of forming a semiconductor by masking and diffusion |
US3383251A (en) * | 1965-12-10 | 1968-05-14 | Rca Corp | Method for forming of semiconductor devices by masking and diffusion |
US3468729A (en) * | 1966-03-21 | 1969-09-23 | Westinghouse Electric Corp | Method of making a semiconductor by oxidizing and simultaneous diffusion of impurities having different rates of diffusivity |
GB1130666A (en) * | 1966-09-30 | 1968-10-16 | Nippon Electric Co | A semiconductor device |
US3419746A (en) * | 1967-05-25 | 1968-12-31 | Bell Telephone Labor Inc | Light sensitive storage device including diode array |
US3442012A (en) * | 1967-08-03 | 1969-05-06 | Teledyne Inc | Method of forming a flip-chip integrated circuit |
US3772102A (en) * | 1969-10-27 | 1973-11-13 | Gen Electric | Method of transferring a desired pattern in silicon to a substrate layer |
FR2252638B1 (US07122603-20061017-C00294.png) * | 1973-11-23 | 1978-08-04 | Commissariat Energie Atomique | |
DE2415290A1 (de) * | 1974-03-29 | 1975-10-09 | Licentia Gmbh | Maske zur bearbeitung einer halbleiteranordnung |
US6087263A (en) | 1998-01-29 | 2000-07-11 | Micron Technology, Inc. | Methods of forming integrated circuitry and integrated circuitry structures |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE880658C (de) * | 1950-09-06 | 1953-05-07 | Alois Vogt Dr | Verfahren zur Herstellung von Zeichen, wie Skalenstrichen, Faden-kreuzungen u. dgl., mit durch optisch homogene Randbegrenzungen bestimmter Raumform auf Unterlagen aller Art und durch dieses Verfahren hergestelltes Erzeugnis |
DE1047911B (de) * | 1955-06-07 | 1958-12-31 | Dr Erwin Daniels | Verfahren zur Herstellung temperaturempfindlicher Hochohmwiderstaende geringer Waermetraegheit, insbesondere zur Strahlungsmessung |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2796562A (en) * | 1952-06-02 | 1957-06-18 | Rca Corp | Semiconductive device and method of fabricating same |
US2995461A (en) * | 1956-04-02 | 1961-08-08 | Libbey Owens Ford Glass Co | Protective coatings |
DE1097039B (de) * | 1958-07-02 | 1961-01-12 | Licentia Gmbh | Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Halbleiteranordnungen |
US2961354A (en) * | 1958-10-28 | 1960-11-22 | Bell Telephone Labor Inc | Surface treatment of semiconductive devices |
NL155412C (US07122603-20061017-C00294.png) * | 1959-04-15 |
-
0
- NL NL281568D patent/NL281568A/xx unknown
- BE BE621451D patent/BE621451A/xx unknown
-
1961
- 1961-08-16 US US131771A patent/US3144366A/en not_active Expired - Lifetime
-
1962
- 1962-07-19 GB GB27733/62A patent/GB992671A/en not_active Expired
- 1962-08-14 CH CH971962A patent/CH402194A/de unknown
- 1962-08-14 DE DEJ22251A patent/DE1266609B/de active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE880658C (de) * | 1950-09-06 | 1953-05-07 | Alois Vogt Dr | Verfahren zur Herstellung von Zeichen, wie Skalenstrichen, Faden-kreuzungen u. dgl., mit durch optisch homogene Randbegrenzungen bestimmter Raumform auf Unterlagen aller Art und durch dieses Verfahren hergestelltes Erzeugnis |
DE1047911B (de) * | 1955-06-07 | 1958-12-31 | Dr Erwin Daniels | Verfahren zur Herstellung temperaturempfindlicher Hochohmwiderstaende geringer Waermetraegheit, insbesondere zur Strahlungsmessung |
Also Published As
Publication number | Publication date |
---|---|
BE621451A (US07122603-20061017-C00294.png) | |
US3144366A (en) | 1964-08-11 |
CH402194A (de) | 1965-11-15 |
NL281568A (US07122603-20061017-C00294.png) | |
GB992671A (en) | 1965-05-19 |
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