DE1224279B - Verfahren zur Herstellung kristalliner, insbesondere einkristalliner, aus Halbleiter-material bestehender, dotierter Schichten auf kristallinen Grundkoerpern aus Halbleitermaterial - Google Patents
Verfahren zur Herstellung kristalliner, insbesondere einkristalliner, aus Halbleiter-material bestehender, dotierter Schichten auf kristallinen Grundkoerpern aus HalbleitermaterialInfo
- Publication number
- DE1224279B DE1224279B DES88949A DES0088949A DE1224279B DE 1224279 B DE1224279 B DE 1224279B DE S88949 A DES88949 A DE S88949A DE S0088949 A DES0088949 A DE S0088949A DE 1224279 B DE1224279 B DE 1224279B
- Authority
- DE
- Germany
- Prior art keywords
- pressure
- dopant
- crystalline
- vessel
- semiconductor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 239000000463 material Substances 0.000 title claims description 23
- 238000000034 method Methods 0.000 title claims description 15
- 239000002019 doping agent Substances 0.000 claims description 41
- 239000007789 gas Substances 0.000 claims description 30
- 150000001875 compounds Chemical class 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 21
- 239000012159 carrier gas Substances 0.000 claims description 20
- 239000007787 solid Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 description 17
- 229910000831 Steel Inorganic materials 0.000 description 8
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000010959 steel Substances 0.000 description 8
- 238000010790 dilution Methods 0.000 description 5
- 239000012895 dilution Substances 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000003708 ampul Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
- C30B31/165—Diffusion sources
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/10—Mixing gases with gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S118/00—Coating apparatus
- Y10S118/90—Semiconductor vapor doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/935—Gas flow control
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES88949A DE1224279B (de) | 1964-01-03 | 1964-01-03 | Verfahren zur Herstellung kristalliner, insbesondere einkristalliner, aus Halbleiter-material bestehender, dotierter Schichten auf kristallinen Grundkoerpern aus Halbleitermaterial |
| NL6414906A NL6414906A (en, 2012) | 1964-01-03 | 1964-12-21 | |
| US420638A US3348984A (en) | 1964-01-03 | 1964-12-23 | Method of growing doped crystalline layers of semiconductor material upon crystalline semiconductor bodies |
| CH1682864A CH440230A (de) | 1964-01-03 | 1964-12-30 | Verfahren zur Herstellung einer dotierten Schicht an der Oberfläche eines Halbleiterkristalls |
| FR589A FR1419372A (fr) | 1964-01-03 | 1964-12-31 | Procédé pour faire croître des couches semi-conductrices cristallines, en particulier monocristallines, et dopées, sur des cristaux semi-conducteurs |
| GB90/65A GB1041941A (en) | 1964-01-03 | 1965-01-01 | Improvements in or relating to processes for the manufacture of gas mixtures and forthe manufacture of homogeneously doped crystalline layers of semiconductor material |
| BE657894A BE657894A (en, 2012) | 1964-01-03 | 1965-01-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES88949A DE1224279B (de) | 1964-01-03 | 1964-01-03 | Verfahren zur Herstellung kristalliner, insbesondere einkristalliner, aus Halbleiter-material bestehender, dotierter Schichten auf kristallinen Grundkoerpern aus Halbleitermaterial |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1224279B true DE1224279B (de) | 1966-09-08 |
Family
ID=7514777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES88949A Pending DE1224279B (de) | 1964-01-03 | 1964-01-03 | Verfahren zur Herstellung kristalliner, insbesondere einkristalliner, aus Halbleiter-material bestehender, dotierter Schichten auf kristallinen Grundkoerpern aus Halbleitermaterial |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3348984A (en, 2012) |
| BE (1) | BE657894A (en, 2012) |
| CH (1) | CH440230A (en, 2012) |
| DE (1) | DE1224279B (en, 2012) |
| FR (1) | FR1419372A (en, 2012) |
| GB (1) | GB1041941A (en, 2012) |
| NL (1) | NL6414906A (en, 2012) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1245335B (de) * | 1964-06-26 | 1967-07-27 | Siemens Ag | Verfahren zur Herstellung einkristalliner, homogen bordotierter, insbesondere aus Silicium oder Germanium bestehender Aufwachsschichten auf einkristallinen Grundkoerpern |
| US3630678A (en) * | 1968-06-26 | 1971-12-28 | Univ Case Western Reserve | Diamond growth process |
| US3630679A (en) * | 1968-06-26 | 1971-12-28 | Univ Case Western Reserve | Diamond growth process |
| US3607061A (en) * | 1968-06-26 | 1971-09-21 | Univ Case Western Reserve | Manufacture of synthetic diamonds |
| US3617371A (en) * | 1968-11-13 | 1971-11-02 | Hewlett Packard Co | Method and means for producing semiconductor material |
| US3615208A (en) * | 1969-02-06 | 1971-10-26 | John W Byron | Diamond growth process |
| US4517220A (en) * | 1983-08-15 | 1985-05-14 | Motorola, Inc. | Deposition and diffusion source control means and method |
| US4717596A (en) * | 1985-10-30 | 1988-01-05 | International Business Machines Corporation | Method for vacuum vapor deposition with improved mass flow control |
| US5832177A (en) * | 1990-10-05 | 1998-11-03 | Fujitsu Limited | Method for controlling apparatus for supplying steam for ashing process |
| EP0504420B1 (en) * | 1990-10-05 | 1997-07-23 | Fujitsu Limited | Steam supplier |
| FR2719787B1 (fr) * | 1994-05-10 | 1996-06-14 | Air Liquide | Fabrication de mélanges de gaz à très basse teneurs. |
| US6817381B2 (en) * | 1999-08-24 | 2004-11-16 | Tokyo Electron Limited | Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus |
| US6473564B1 (en) * | 2000-01-07 | 2002-10-29 | Nihon Shinku Gijutsu Kabushiki Kaisha | Method of manufacturing thin organic film |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL131267C (en, 2012) * | 1960-06-14 | 1900-01-01 | ||
| US3173812A (en) * | 1961-02-27 | 1965-03-16 | Yardney International Corp | Deferred-action battery |
| US3173802A (en) * | 1961-12-14 | 1965-03-16 | Bell Telephone Labor Inc | Process for controlling gas phase composition |
| US3155621A (en) * | 1962-07-13 | 1964-11-03 | Plessey Co Ltd | Production of silicon with a predetermined impurity content |
| US3318814A (en) * | 1962-07-24 | 1967-05-09 | Siemens Ag | Doped semiconductor process and products produced thereby |
-
1964
- 1964-01-03 DE DES88949A patent/DE1224279B/de active Pending
- 1964-12-21 NL NL6414906A patent/NL6414906A/xx unknown
- 1964-12-23 US US420638A patent/US3348984A/en not_active Expired - Lifetime
- 1964-12-30 CH CH1682864A patent/CH440230A/de unknown
- 1964-12-31 FR FR589A patent/FR1419372A/fr not_active Expired
-
1965
- 1965-01-01 GB GB90/65A patent/GB1041941A/en not_active Expired
- 1965-01-04 BE BE657894A patent/BE657894A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1041941A (en) | 1966-09-07 |
| US3348984A (en) | 1967-10-24 |
| CH440230A (de) | 1967-07-31 |
| FR1419372A (fr) | 1965-11-26 |
| BE657894A (en, 2012) | 1965-07-05 |
| NL6414906A (en, 2012) | 1965-07-05 |
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