DE1128413B - Verfahren zur Herstellung von zersetzungsfreiem einkristallinem Silicium durch tiegelfreies Zonenschmelzen - Google Patents

Verfahren zur Herstellung von zersetzungsfreiem einkristallinem Silicium durch tiegelfreies Zonenschmelzen

Info

Publication number
DE1128413B
DE1128413B DES71415A DES0071415A DE1128413B DE 1128413 B DE1128413 B DE 1128413B DE S71415 A DES71415 A DE S71415A DE S0071415 A DES0071415 A DE S0071415A DE 1128413 B DE1128413 B DE 1128413B
Authority
DE
Germany
Prior art keywords
seed crystal
melting zone
silicon rod
silicon
rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES71415A
Other languages
German (de)
English (en)
Inventor
Dr Rer Nat Wolfgang Keller
Dr Guenther Ziegler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB29190/60A priority Critical patent/GB926487A/en
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES71415A priority patent/DE1128413B/de
Priority to CH721561A priority patent/CH395554A/de
Priority to NL266876D priority patent/NL266876A/xx
Priority to NL61266876A priority patent/NL139006B/nl
Priority to GB29981/61A priority patent/GB926497A/en
Priority to BE610603A priority patent/BE610603A/fr
Priority to US157033A priority patent/US3175891A/en
Priority to FR880041A priority patent/FR1374962A/fr
Priority to SE11762/61A priority patent/SE306303B/xx
Publication of DE1128413B publication Critical patent/DE1128413B/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/38—Means for extinguishing or suppressing arc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/38—Means for extinguishing or suppressing arc
    • H01H2085/386—Means for extinguishing or suppressing arc with magnetic or electrodynamic arc-blowing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Fuses (AREA)
DES71415A 1960-11-25 1960-11-25 Verfahren zur Herstellung von zersetzungsfreiem einkristallinem Silicium durch tiegelfreies Zonenschmelzen Pending DE1128413B (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
GB29190/60A GB926487A (en) 1960-11-25 1960-08-24 Improvements in and relating to electrical fuse assemblies
DES71415A DE1128413B (de) 1960-11-25 1960-11-25 Verfahren zur Herstellung von zersetzungsfreiem einkristallinem Silicium durch tiegelfreies Zonenschmelzen
CH721561A CH395554A (de) 1960-11-25 1961-06-20 Verfahren zur Herstellung von versetzungsfreiem einkristallinem Silizium durch tiegelfreies Zonenschmelzen
NL266876D NL266876A (nl) 1960-11-25 1961-07-10
NL61266876A NL139006B (nl) 1960-11-25 1961-07-10 Werkwijze voor het vervaardigen van siliciummonokristallen door middel van kroesloos zonesmelten.
GB29981/61A GB926497A (en) 1960-11-25 1961-08-18 A process for producing a monocrystal from a polycrystalline rod of silicon
BE610603A BE610603A (fr) 1960-11-25 1961-11-22 Procédé de fabrication d'un monocristal de silicium, exempt de dislocations, par la méthode de la fusion par zone sans creuset
US157033A US3175891A (en) 1960-11-25 1961-11-24 Method for the production of dislocation-free monocrystalline silicon by floating zone melting
FR880041A FR1374962A (fr) 1960-11-25 1961-11-24 Procédé de fabrication d'un monocristal de silicium exempt de dislocations par la méthode de la fusion par zone sans creuset
SE11762/61A SE306303B (nl) 1960-11-25 1961-11-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES71415A DE1128413B (de) 1960-11-25 1960-11-25 Verfahren zur Herstellung von zersetzungsfreiem einkristallinem Silicium durch tiegelfreies Zonenschmelzen

Publications (1)

Publication Number Publication Date
DE1128413B true DE1128413B (de) 1962-04-26

Family

ID=7502452

Family Applications (1)

Application Number Title Priority Date Filing Date
DES71415A Pending DE1128413B (de) 1960-11-25 1960-11-25 Verfahren zur Herstellung von zersetzungsfreiem einkristallinem Silicium durch tiegelfreies Zonenschmelzen

Country Status (7)

Country Link
US (1) US3175891A (nl)
BE (1) BE610603A (nl)
CH (1) CH395554A (nl)
DE (1) DE1128413B (nl)
GB (2) GB926487A (nl)
NL (2) NL266876A (nl)
SE (1) SE306303B (nl)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1224273B (de) * 1964-06-23 1966-09-08 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
DE1519912B1 (de) * 1963-10-15 1970-06-18 Texas Instruments Inc Verfahren zum Herstellen von versetzungsfreiem,einkristallinem Halbleitermaterial

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE789637A (fr) * 1972-10-03 1973-04-03 Elphiac Sa Procede de fabrication de monocristaux et installation pour executer ceprocede.
DE2356376A1 (de) * 1973-11-12 1975-05-15 Siemens Ag Verfahren zum herstellen von homogen dotierten siliciumeinkristallen mit n-leitfaehigkeit durch neutronenbestrahlung

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1519912B1 (de) * 1963-10-15 1970-06-18 Texas Instruments Inc Verfahren zum Herstellen von versetzungsfreiem,einkristallinem Halbleitermaterial
DE1224273B (de) * 1964-06-23 1966-09-08 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen

Also Published As

Publication number Publication date
US3175891A (en) 1965-03-30
GB926487A (en) 1963-05-22
SE306303B (nl) 1968-11-25
BE610603A (fr) 1962-05-22
CH395554A (de) 1965-07-15
NL139006B (nl) 1973-06-15
NL266876A (nl)
GB926497A (en) 1963-05-22

Similar Documents

Publication Publication Date Title
DE1135671B (de) Verfahren zum Herstellen eines pn-UEbergangs und/oder eines Gradienten eines elektrisch wirksamen Elements in einem Halbleiterkristall
DE1254131B (de) Verfahren zur Regelung der Dicke flacher, dendritischer Kristalle aus Silicium, Germanium oder Halbleiterverbindungen beim kontinuierlichen Ziehen aus einer Schmelze
DE1187098B (de) Verfahren zum Herstellen von Koerpern aus hochgereinigtem Halbleitermaterial
DE69403275T2 (de) Verfahren und Vorrichtung zur Herstellung eines Silizium-Einkristalles
DE1207920B (de) Verfahren zum Herstellen sauerstofffreier, verwerfungsfreier Halbleitereinkristalle durch Ziehen aus einer tiegellosen Schmelze
EP0758689B1 (de) Verfahren und Vorrichtung zur Herstellung von Einkristallen
DE102005060391B4 (de) Ein Apparat zur Herstellung eines Einkristalls und ein Verfahren zur Herstellung eines Einkristalls
EP0142666A2 (de) Verfahren zur Herstellung von versetzungsfreien Einkristallstäben aus Silicium
DE1128413B (de) Verfahren zur Herstellung von zersetzungsfreiem einkristallinem Silicium durch tiegelfreies Zonenschmelzen
DE1094710C2 (de) Verfahren zur Zuechtung von Einkristallen durch tiegelfreies Zonenschmelzen
DE1444530A1 (de) Verfahren zum Herstellen von einkristallinen Halbleiterstaeben
AT223659B (de) Verfahren zur Herstellung von versetzungsfreiem einkristallinem Silizium durch tiegelfreies Zonenschmelzen
DE1263698B (de) Verfahren zum tiegelfreien Zonenschmelzen
DE68912686T2 (de) Verfahren zur Herstellung eines Einkristalls aus einer Halbleiter-Verbindung.
DE2712561A1 (de) Verfahren zum schliessen rohrfoermiger koerper aus silicium
DE1254590B (de) Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial, insbesondere von Silicium
DE60124843T2 (de) Vorrichtung zur Ziehung eines Halbleiter-Einkristalles
DE1278413B (de) Verfahren zum Ziehen duenner stabfoermiger Halbleiterkristalle aus einer Halbleiterschmelze
DE1212051B (de) Verfahren zum tiegellosen Zonenschmelzen von Staeben aus Silicium
DE1148525B (de) Verfahren zum Vergroessern des Stabquerschnittes beim tiegellosen Zonenschmelzen eines Stabes aus kristallinem Material, insbesondere Halbleitermaterial
DE1275996B (de) Vorrichtung zum tiegelfreien Zonenschmelzen
DE1205949B (de) Verfahren zum Zuechten von Einkristallen aus der Schmelze durch Ziehen oder tiegelloses Zonenschmelzen
DE2639563A1 (de) Verfahren zur herstellung von tiegelgezogenen siliciumstaeben mit gehalt an leichtfluechtigen dotierstoffen, insbesondere antimon, innerhalb enger widerstandstoleranzen
DE2140510A1 (de) Verfahren zum Herstellen von ein kristallinem Silicium
DE2314971C3 (de) Verfahren zum tiegelfreien Zonenschmelzen