BE789637A - Procede de fabrication de monocristaux et installation pour executer ceprocede. - Google Patents

Procede de fabrication de monocristaux et installation pour executer ceprocede.

Info

Publication number
BE789637A
BE789637A BE789637DA BE789637A BE 789637 A BE789637 A BE 789637A BE 789637D A BE789637D A BE 789637DA BE 789637 A BE789637 A BE 789637A
Authority
BE
Belgium
Prior art keywords
execute
installation
single crystal
crystal manufacturing
manufacturing process
Prior art date
Application number
Other languages
English (en)
Inventor
Georges Defosse
Original Assignee
Elphiac Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE789637A publication Critical patent/BE789637A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/285—Crystal holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
BE789637D 1972-10-03 Procede de fabrication de monocristaux et installation pour executer ceprocede. BE789637A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BE1004441 1972-10-03

Publications (1)

Publication Number Publication Date
BE789637A true BE789637A (fr) 1973-04-03

Family

ID=3862643

Family Applications (1)

Application Number Title Priority Date Filing Date
BE789637D BE789637A (fr) 1972-10-03 Procede de fabrication de monocristaux et installation pour executer ceprocede.

Country Status (6)

Country Link
US (1) US3972684A (fr)
JP (1) JPS4972183A (fr)
BE (1) BE789637A (fr)
DE (1) DE2348883B2 (fr)
FR (1) FR2201130B1 (fr)
GB (1) GB1390308A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4078897A (en) * 1975-04-11 1978-03-14 Leybold-Heraeus Gmbh & Co. Kg Apparatus for producing monocrystals
US4186173A (en) * 1975-04-11 1980-01-29 Leybold-Heraeus Gmbh & Co. Kg Apparatus for producing monocrystals
DE2652199C3 (de) * 1976-11-16 1982-05-19 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zum Abstützen des Kristallstabes beim tiegelfreien Zonenziehen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1080071B (de) * 1959-02-03 1960-04-21 Paul Lucas Dipl Chem Vorrichtung zum Ziehen von Einkristallen aus einer Schmelze
DE1165882B (de) * 1960-02-05 1964-03-19 Philips Patentverwaltung Vorrichtung zur Ausfuehrung von Drehbewegungen an stabfoermigen Koerpern, insbesondere an Halbleiterkoerpern
GB926487A (en) * 1960-11-25 1963-05-22 Dorman & Smith Ltd Improvements in and relating to electrical fuse assemblies
DE1519901A1 (de) * 1966-09-23 1970-02-12 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes

Also Published As

Publication number Publication date
DE2348883A1 (de) 1974-04-11
US3972684A (en) 1976-08-03
JPS4972183A (en) 1974-07-12
GB1390308A (en) 1975-04-09
FR2201130A1 (fr) 1974-04-26
FR2201130B1 (fr) 1976-06-18
DE2348883B2 (de) 1975-06-05

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