DE112022005676T5 - Sperrschicht-schottky-diode - Google Patents

Sperrschicht-schottky-diode Download PDF

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Publication number
DE112022005676T5
DE112022005676T5 DE112022005676.2T DE112022005676T DE112022005676T5 DE 112022005676 T5 DE112022005676 T5 DE 112022005676T5 DE 112022005676 T DE112022005676 T DE 112022005676T DE 112022005676 T5 DE112022005676 T5 DE 112022005676T5
Authority
DE
Germany
Prior art keywords
anode electrode
schottky diode
outer peripheral
drift layer
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022005676.2T
Other languages
German (de)
English (en)
Inventor
Jun Arima
Minoru Fujita
Katsumi Kawasaki
Jun Hirabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Publication of DE112022005676T5 publication Critical patent/DE112022005676T5/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Electrodes Of Semiconductors (AREA)
DE112022005676.2T 2021-11-29 2022-08-12 Sperrschicht-schottky-diode Pending DE112022005676T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021193060A JP7770170B2 (ja) 2021-11-29 2021-11-29 ジャンクションバリアショットキーダイオード
JP2021-193060 2021-11-29
PCT/JP2022/030766 WO2023095396A1 (ja) 2021-11-29 2022-08-12 ジャンクションバリアショットキーダイオード

Publications (1)

Publication Number Publication Date
DE112022005676T5 true DE112022005676T5 (de) 2024-09-12

Family

ID=86539150

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022005676.2T Pending DE112022005676T5 (de) 2021-11-29 2022-08-12 Sperrschicht-schottky-diode

Country Status (6)

Country Link
US (1) US20240313130A1 (https=)
JP (1) JP7770170B2 (https=)
CN (1) CN118318310A (https=)
DE (1) DE112022005676T5 (https=)
TW (1) TWI827223B (https=)
WO (1) WO2023095396A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025012574A (ja) * 2023-07-13 2025-01-24 株式会社東芝 半導体装置
TWI901178B (zh) * 2023-09-21 2025-10-11 日商Ｔｄｋ股份有限公司 半導體裝置
CN118841453A (zh) * 2024-08-09 2024-10-25 乐山希尔电子股份有限公司 一种垂直型宽禁带肖特基功率二极管及其制备方法
CN119451139A (zh) * 2024-10-31 2025-02-14 中国电子科技集团公司第五十八研究所 一种沟槽型氧化镓异质结势垒肖特基二极管

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019036593A (ja) 2017-08-10 2019-03-07 株式会社タムラ製作所 ダイオード

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004053761A1 (de) * 2004-11-08 2006-05-18 Robert Bosch Gmbh Halbleitereinrichtung und Verfahren für deren Herstellung
JP2009177028A (ja) * 2008-01-25 2009-08-06 Toshiba Corp 半導体装置
KR101220568B1 (ko) * 2008-03-17 2013-01-21 미쓰비시덴키 가부시키가이샤 반도체 장치
US8372738B2 (en) * 2009-10-30 2013-02-12 Alpha & Omega Semiconductor, Inc. Method for manufacturing a gallium nitride based semiconductor device with improved termination scheme
JP2012124268A (ja) * 2010-12-07 2012-06-28 Nippon Inter Electronics Corp 半導体装置
CN102222701A (zh) * 2011-06-23 2011-10-19 哈尔滨工程大学 一种沟槽结构肖特基器件
JP6411258B2 (ja) * 2015-03-19 2018-10-24 新電元工業株式会社 半導体装置
JP6845397B2 (ja) * 2016-04-28 2021-03-17 株式会社タムラ製作所 トレンチｍｏｓ型ショットキーダイオード
JP7248961B2 (ja) * 2017-08-24 2023-03-30 株式会社Flosfia 半導体装置
JP7045008B2 (ja) * 2017-10-26 2022-03-31 Tdk株式会社 ショットキーバリアダイオード
CN110137268A (zh) * 2019-06-21 2019-08-16 派恩杰半导体（杭州）有限公司 一种带有沟槽电极的高压二极管
JP7371484B2 (ja) * 2019-12-18 2023-10-31 Tdk株式会社 ショットキーバリアダイオード
JP7415537B2 (ja) * 2019-12-18 2024-01-17 Tdk株式会社 ショットキーバリアダイオード

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019036593A (ja) 2017-08-10 2019-03-07 株式会社タムラ製作所 ダイオード

Also Published As

Publication number Publication date
CN118318310A (zh) 2024-07-09
TWI827223B (zh) 2023-12-21
JP2023079552A (ja) 2023-06-08
US20240313130A1 (en) 2024-09-19
WO2023095396A1 (ja) 2023-06-01
TW202322405A (zh) 2023-06-01
JP7770170B2 (ja) 2025-11-14

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R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0029872000

Ipc: H10D0008600000

R016 Response to examination communication