TWI827223B - 接面位障肖特基二極體 - Google Patents

接面位障肖特基二極體 Download PDF

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Publication number
TWI827223B
TWI827223B TW111132598A TW111132598A TWI827223B TW I827223 B TWI827223 B TW I827223B TW 111132598 A TW111132598 A TW 111132598A TW 111132598 A TW111132598 A TW 111132598A TW I827223 B TWI827223 B TW I827223B
Authority
TW
Taiwan
Prior art keywords
anode electrode
schottky diode
junction barrier
trench
drift layer
Prior art date
Application number
TW111132598A
Other languages
English (en)
Chinese (zh)
Other versions
TW202322405A (zh
Inventor
有馬潤
藤田実
川崎克己
平林潤
Original Assignee
日商Ｔｄｋ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｔｄｋ股份有限公司 filed Critical 日商Ｔｄｋ股份有限公司
Publication of TW202322405A publication Critical patent/TW202322405A/zh
Application granted granted Critical
Publication of TWI827223B publication Critical patent/TWI827223B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
TW111132598A 2021-11-29 2022-08-30 接面位障肖特基二極體 TWI827223B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021193060A JP7770170B2 (ja) 2021-11-29 2021-11-29 ジャンクションバリアショットキーダイオード
JP2021-193060 2021-11-29

Publications (2)

Publication Number Publication Date
TW202322405A TW202322405A (zh) 2023-06-01
TWI827223B true TWI827223B (zh) 2023-12-21

Family

ID=86539150

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111132598A TWI827223B (zh) 2021-11-29 2022-08-30 接面位障肖特基二極體

Country Status (6)

Country Link
US (1) US20240313130A1 (https=)
JP (1) JP7770170B2 (https=)
CN (1) CN118318310A (https=)
DE (1) DE112022005676T5 (https=)
TW (1) TWI827223B (https=)
WO (1) WO2023095396A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025012574A (ja) * 2023-07-13 2025-01-24 株式会社東芝 半導体装置
TWI901178B (zh) * 2023-09-21 2025-10-11 日商Ｔｄｋ股份有限公司 半導體裝置
CN118841453A (zh) * 2024-08-09 2024-10-25 乐山希尔电子股份有限公司 一种垂直型宽禁带肖特基功率二极管及其制备方法
CN119451139A (zh) * 2024-10-31 2025-02-14 中国电子科技集团公司第五十八研究所 一种沟槽型氧化镓异质结势垒肖特基二极管

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009116444A1 (ja) * 2008-03-17 2009-09-24 三菱電機株式会社 半導体装置
TW201133828A (en) * 2009-10-30 2011-10-01 Alpha & Omega Semiconductor Gallium nitride semiconductor device with improved termination scheme
TW201740568A (zh) * 2016-04-28 2017-11-16 日商．田村製作所股份有限公司 溝槽式金氧半型肖特基二極體
WO2019082580A1 (ja) * 2017-10-26 2019-05-02 Tdk株式会社 ショットキーバリアダイオード
WO2021124649A1 (ja) * 2019-12-18 2021-06-24 Tdk株式会社 ショットキーバリアダイオード

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004053761A1 (de) * 2004-11-08 2006-05-18 Robert Bosch Gmbh Halbleitereinrichtung und Verfahren für deren Herstellung
JP2009177028A (ja) * 2008-01-25 2009-08-06 Toshiba Corp 半導体装置
JP2012124268A (ja) * 2010-12-07 2012-06-28 Nippon Inter Electronics Corp 半導体装置
CN102222701A (zh) * 2011-06-23 2011-10-19 哈尔滨工程大学 一种沟槽结构肖特基器件
JP6411258B2 (ja) * 2015-03-19 2018-10-24 新電元工業株式会社 半導体装置
JP7037142B2 (ja) 2017-08-10 2022-03-16 株式会社タムラ製作所 ダイオード
JP7248961B2 (ja) * 2017-08-24 2023-03-30 株式会社Flosfia 半導体装置
CN110137268A (zh) * 2019-06-21 2019-08-16 派恩杰半导体（杭州）有限公司 一种带有沟槽电极的高压二极管
JP7371484B2 (ja) * 2019-12-18 2023-10-31 Tdk株式会社 ショットキーバリアダイオード

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009116444A1 (ja) * 2008-03-17 2009-09-24 三菱電機株式会社 半導体装置
TW201133828A (en) * 2009-10-30 2011-10-01 Alpha & Omega Semiconductor Gallium nitride semiconductor device with improved termination scheme
TW201740568A (zh) * 2016-04-28 2017-11-16 日商．田村製作所股份有限公司 溝槽式金氧半型肖特基二極體
WO2019082580A1 (ja) * 2017-10-26 2019-05-02 Tdk株式会社 ショットキーバリアダイオード
WO2021124649A1 (ja) * 2019-12-18 2021-06-24 Tdk株式会社 ショットキーバリアダイオード

Also Published As

Publication number Publication date
CN118318310A (zh) 2024-07-09
DE112022005676T5 (de) 2024-09-12
JP2023079552A (ja) 2023-06-08
US20240313130A1 (en) 2024-09-19
WO2023095396A1 (ja) 2023-06-01
TW202322405A (zh) 2023-06-01
JP7770170B2 (ja) 2025-11-14

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