JP7770170B2 - ジャンクションバリアショットキーダイオード - Google Patents

ジャンクションバリアショットキーダイオード

Info

Publication number
JP7770170B2
JP7770170B2 JP2021193060A JP2021193060A JP7770170B2 JP 7770170 B2 JP7770170 B2 JP 7770170B2 JP 2021193060 A JP2021193060 A JP 2021193060A JP 2021193060 A JP2021193060 A JP 2021193060A JP 7770170 B2 JP7770170 B2 JP 7770170B2
Authority
JP
Japan
Prior art keywords
trench
schottky diode
anode electrode
junction barrier
barrier schottky
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021193060A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023079552A5 (https=
JP2023079552A (ja
Inventor
潤 有馬
実 藤田
克己 川崎
潤 平林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP2021193060A priority Critical patent/JP7770170B2/ja
Priority to CN202280079132.0A priority patent/CN118318310A/zh
Priority to DE112022005676.2T priority patent/DE112022005676T5/de
Priority to PCT/JP2022/030766 priority patent/WO2023095396A1/ja
Priority to TW111132598A priority patent/TWI827223B/zh
Publication of JP2023079552A publication Critical patent/JP2023079552A/ja
Priority to US18/676,107 priority patent/US20240313130A1/en
Publication of JP2023079552A5 publication Critical patent/JP2023079552A5/ja
Application granted granted Critical
Publication of JP7770170B2 publication Critical patent/JP7770170B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2021193060A 2021-11-29 2021-11-29 ジャンクションバリアショットキーダイオード Active JP7770170B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2021193060A JP7770170B2 (ja) 2021-11-29 2021-11-29 ジャンクションバリアショットキーダイオード
DE112022005676.2T DE112022005676T5 (de) 2021-11-29 2022-08-12 Sperrschicht-schottky-diode
PCT/JP2022/030766 WO2023095396A1 (ja) 2021-11-29 2022-08-12 ジャンクションバリアショットキーダイオード
CN202280079132.0A CN118318310A (zh) 2021-11-29 2022-08-12 结势垒肖特基二极管
TW111132598A TWI827223B (zh) 2021-11-29 2022-08-30 接面位障肖特基二極體
US18/676,107 US20240313130A1 (en) 2021-11-29 2024-05-28 Junction barrier schottky diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021193060A JP7770170B2 (ja) 2021-11-29 2021-11-29 ジャンクションバリアショットキーダイオード

Publications (3)

Publication Number Publication Date
JP2023079552A JP2023079552A (ja) 2023-06-08
JP2023079552A5 JP2023079552A5 (https=) 2024-11-21
JP7770170B2 true JP7770170B2 (ja) 2025-11-14

Family

ID=86539150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021193060A Active JP7770170B2 (ja) 2021-11-29 2021-11-29 ジャンクションバリアショットキーダイオード

Country Status (6)

Country Link
US (1) US20240313130A1 (https=)
JP (1) JP7770170B2 (https=)
CN (1) CN118318310A (https=)
DE (1) DE112022005676T5 (https=)
TW (1) TWI827223B (https=)
WO (1) WO2023095396A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025012574A (ja) * 2023-07-13 2025-01-24 株式会社東芝 半導体装置
TWI901178B (zh) * 2023-09-21 2025-10-11 日商Ｔｄｋ股份有限公司 半導體裝置
CN118841453A (zh) * 2024-08-09 2024-10-25 乐山希尔电子股份有限公司 一种垂直型宽禁带肖特基功率二极管及其制备方法
CN119451139A (zh) * 2024-10-31 2025-02-14 中国电子科技集团公司第五十八研究所 一种沟槽型氧化镓异质结势垒肖特基二极管

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008519448A (ja) 2004-11-08 2008-06-05 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 半導体デバイスおよび半導体デバイスの製造方法
JP2009177028A (ja) 2008-01-25 2009-08-06 Toshiba Corp 半導体装置
CN102222701A (zh) 2011-06-23 2011-10-19 哈尔滨工程大学 一种沟槽结构肖特基器件
JP2012124268A (ja) 2010-12-07 2012-06-28 Nippon Inter Electronics Corp 半導体装置
JP2016178182A (ja) 2015-03-19 2016-10-06 新電元工業株式会社 半導体装置およびその製造方法
JP2019041106A (ja) 2017-08-24 2019-03-14 株式会社Flosfia 半導体装置
JP2021097169A (ja) 2019-12-18 2021-06-24 Tdk株式会社 ショットキーバリアダイオード

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101220568B1 (ko) * 2008-03-17 2013-01-21 미쓰비시덴키 가부시키가이샤 반도체 장치
US8372738B2 (en) * 2009-10-30 2013-02-12 Alpha & Omega Semiconductor, Inc. Method for manufacturing a gallium nitride based semiconductor device with improved termination scheme
JP6845397B2 (ja) * 2016-04-28 2021-03-17 株式会社タムラ製作所 トレンチｍｏｓ型ショットキーダイオード
JP7037142B2 (ja) 2017-08-10 2022-03-16 株式会社タムラ製作所 ダイオード
JP7045008B2 (ja) * 2017-10-26 2022-03-31 Tdk株式会社 ショットキーバリアダイオード
CN110137268A (zh) * 2019-06-21 2019-08-16 派恩杰半导体（杭州）有限公司 一种带有沟槽电极的高压二极管
JP7415537B2 (ja) * 2019-12-18 2024-01-17 Tdk株式会社 ショットキーバリアダイオード

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008519448A (ja) 2004-11-08 2008-06-05 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 半導体デバイスおよび半導体デバイスの製造方法
JP2009177028A (ja) 2008-01-25 2009-08-06 Toshiba Corp 半導体装置
JP2012124268A (ja) 2010-12-07 2012-06-28 Nippon Inter Electronics Corp 半導体装置
CN102222701A (zh) 2011-06-23 2011-10-19 哈尔滨工程大学 一种沟槽结构肖特基器件
JP2016178182A (ja) 2015-03-19 2016-10-06 新電元工業株式会社 半導体装置およびその製造方法
JP2019041106A (ja) 2017-08-24 2019-03-14 株式会社Flosfia 半導体装置
JP2021097169A (ja) 2019-12-18 2021-06-24 Tdk株式会社 ショットキーバリアダイオード

Also Published As

Publication number Publication date
CN118318310A (zh) 2024-07-09
DE112022005676T5 (de) 2024-09-12
TWI827223B (zh) 2023-12-21
JP2023079552A (ja) 2023-06-08
US20240313130A1 (en) 2024-09-19
WO2023095396A1 (ja) 2023-06-01
TW202322405A (zh) 2023-06-01

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