DE112022004527T5 - Transformatorchip - Google Patents

Transformatorchip Download PDF

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Publication number
DE112022004527T5
DE112022004527T5 DE112022004527.2T DE112022004527T DE112022004527T5 DE 112022004527 T5 DE112022004527 T5 DE 112022004527T5 DE 112022004527 T DE112022004527 T DE 112022004527T DE 112022004527 T5 DE112022004527 T5 DE 112022004527T5
Authority
DE
Germany
Prior art keywords
coil
substrate
lines
transformer chip
insulating member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022004527.2T
Other languages
German (de)
English (en)
Inventor
Toru Higuchi
Eiji Kuwahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of DE112022004527T5 publication Critical patent/DE112022004527T5/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/2804—Printed windings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/32—Insulating of coils, windings, or parts thereof
    • H01F27/323—Insulation between winding turns, between winding layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/2804—Printed windings
    • H01F2027/2809—Printed windings on stacked layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/32—Insulating of coils, windings, or parts thereof
    • H01F27/327—Encapsulating or impregnating

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Coils Or Transformers For Communication (AREA)
DE112022004527.2T 2021-09-21 2022-09-16 Transformatorchip Pending DE112022004527T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021153289 2021-09-21
JP2021-153289 2021-09-21
PCT/JP2022/034857 WO2023048105A1 (ja) 2021-09-21 2022-09-16 トランスチップ

Publications (1)

Publication Number Publication Date
DE112022004527T5 true DE112022004527T5 (de) 2024-09-12

Family

ID=85719478

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022004527.2T Pending DE112022004527T5 (de) 2021-09-21 2022-09-16 Transformatorchip

Country Status (5)

Country Link
US (1) US20240222353A1 (https=)
JP (1) JPWO2023048105A1 (https=)
CN (1) CN117957622A (https=)
DE (1) DE112022004527T5 (https=)
WO (1) WO2023048105A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12224103B2 (en) * 2021-06-15 2025-02-11 Intel Corporation Angled inductor with small form factor
US20240038439A1 (en) * 2022-07-28 2024-02-01 Qualcomm Incorporated Inductor packages employing wire bonds over a lead frame to form integrated inductor(s), and related integrated circuit (ic) packages and fabrication methods

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018078169A (ja) 2016-11-08 2018-05-17 ローム株式会社 電子部品

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5284452A (en) * 1975-12-31 1977-07-14 Fujitsu Ltd Method of manufacturing coil
JPH04354308A (ja) * 1991-05-31 1992-12-08 Sumitomo Electric Ind Ltd トランス
KR100250225B1 (ko) * 1996-11-19 2000-04-01 윤종용 집적회로용 인덕터 및 그 제조방법
JP3527105B2 (ja) * 1998-09-28 2004-05-17 富士通アクセス株式会社 プリント基板
FR2793943B1 (fr) * 1999-05-18 2001-07-13 Memscap Micro-composants du type micro-inductance ou micro- transformateur, et procede de fabrication de tels micro- composants
JP2005347286A (ja) * 2002-05-29 2005-12-15 Ajinomoto Co Inc コイル内蔵多層基板、半導体チップ、及びそれらの製造方法
JP3800540B2 (ja) * 2003-01-31 2006-07-26 Ｔｄｋ株式会社 インダクタンス素子の製造方法と積層電子部品と積層電子部品モジュ−ルとこれらの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018078169A (ja) 2016-11-08 2018-05-17 ローム株式会社 電子部品

Also Published As

Publication number Publication date
JPWO2023048105A1 (https=) 2023-03-30
WO2023048105A1 (ja) 2023-03-30
US20240222353A1 (en) 2024-07-04
CN117957622A (zh) 2024-04-30

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R012 Request for examination validly filed