JPWO2023048105A1 - - Google Patents

Info

Publication number
JPWO2023048105A1
JPWO2023048105A1 JP2023549535A JP2023549535A JPWO2023048105A1 JP WO2023048105 A1 JPWO2023048105 A1 JP WO2023048105A1 JP 2023549535 A JP2023549535 A JP 2023549535A JP 2023549535 A JP2023549535 A JP 2023549535A JP WO2023048105 A1 JPWO2023048105 A1 JP WO2023048105A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023549535A
Other languages
Japanese (ja)
Other versions
JPWO2023048105A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023048105A1 publication Critical patent/JPWO2023048105A1/ja
Publication of JPWO2023048105A5 publication Critical patent/JPWO2023048105A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/28Coils; Windings; Conductive connections
    • H01F27/2804Printed windings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/28Coils; Windings; Conductive connections
    • H01F27/32Insulating of coils, windings, or parts thereof
    • H01F27/323Insulation between winding turns, between winding layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/28Coils; Windings; Conductive connections
    • H01F27/2804Printed windings
    • H01F2027/2809Printed windings on stacked layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/28Coils; Windings; Conductive connections
    • H01F27/32Insulating of coils, windings, or parts thereof
    • H01F27/327Encapsulating or impregnating

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Coils Or Transformers For Communication (AREA)
JP2023549535A 2021-09-21 2022-09-16 Pending JPWO2023048105A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021153289 2021-09-21
PCT/JP2022/034857 WO2023048105A1 (ja) 2021-09-21 2022-09-16 トランスチップ

Publications (2)

Publication Number Publication Date
JPWO2023048105A1 true JPWO2023048105A1 (https=) 2023-03-30
JPWO2023048105A5 JPWO2023048105A5 (https=) 2024-06-11

Family

ID=85719478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023549535A Pending JPWO2023048105A1 (https=) 2021-09-21 2022-09-16

Country Status (5)

Country Link
US (1) US20240222353A1 (https=)
JP (1) JPWO2023048105A1 (https=)
CN (1) CN117957622A (https=)
DE (1) DE112022004527T5 (https=)
WO (1) WO2023048105A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12224103B2 (en) * 2021-06-15 2025-02-11 Intel Corporation Angled inductor with small form factor
US20240038439A1 (en) * 2022-07-28 2024-02-01 Qualcomm Incorporated Inductor packages employing wire bonds over a lead frame to form integrated inductor(s), and related integrated circuit (ic) packages and fabrication methods

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5284452A (en) * 1975-12-31 1977-07-14 Fujitsu Ltd Method of manufacturing coil
JPH04354308A (ja) * 1991-05-31 1992-12-08 Sumitomo Electric Ind Ltd トランス
KR100250225B1 (ko) * 1996-11-19 2000-04-01 윤종용 집적회로용 인덕터 및 그 제조방법
JP3527105B2 (ja) * 1998-09-28 2004-05-17 富士通アクセス株式会社 プリント基板
FR2793943B1 (fr) * 1999-05-18 2001-07-13 Memscap Micro-composants du type micro-inductance ou micro- transformateur, et procede de fabrication de tels micro- composants
JP2005347286A (ja) * 2002-05-29 2005-12-15 Ajinomoto Co Inc コイル内蔵多層基板、半導体チップ、及びそれらの製造方法
JP3800540B2 (ja) * 2003-01-31 2006-07-26 Tdk株式会社 インダクタンス素子の製造方法と積層電子部品と積層電子部品モジュ−ルとこれらの製造方法
JP6841634B2 (ja) 2016-11-08 2021-03-10 ローム株式会社 電子部品

Also Published As

Publication number Publication date
DE112022004527T5 (de) 2024-09-12
WO2023048105A1 (ja) 2023-03-30
US20240222353A1 (en) 2024-07-04
CN117957622A (zh) 2024-04-30

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Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240227

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250909