DE112022001382T5 - Halbleiterbauteil und verfahren zur herstellung eines halbleiterbauteils - Google Patents

Halbleiterbauteil und verfahren zur herstellung eines halbleiterbauteils Download PDF

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Publication number
DE112022001382T5
DE112022001382T5 DE112022001382.6T DE112022001382T DE112022001382T5 DE 112022001382 T5 DE112022001382 T5 DE 112022001382T5 DE 112022001382 T DE112022001382 T DE 112022001382T DE 112022001382 T5 DE112022001382 T5 DE 112022001382T5
Authority
DE
Germany
Prior art keywords
semiconductor layer
schottky electrode
semiconductor
oxygen
schottky
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022001382.6T
Other languages
German (de)
English (en)
Inventor
Masaya Ueno
Sawa Haruyama
Masaya SAITO
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of DE112022001382T5 publication Critical patent/DE112022001382T5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0121—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors

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  • Electrodes Of Semiconductors (AREA)
DE112022001382.6T 2021-04-05 2022-03-16 Halbleiterbauteil und verfahren zur herstellung eines halbleiterbauteils Pending DE112022001382T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-064154 2021-04-05
JP2021064154 2021-04-05
PCT/JP2022/012074 WO2022215471A1 (ja) 2021-04-05 2022-03-16 半導体装置および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
DE112022001382T5 true DE112022001382T5 (de) 2023-12-28

Family

ID=83546232

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022001382.6T Pending DE112022001382T5 (de) 2021-04-05 2022-03-16 Halbleiterbauteil und verfahren zur herstellung eines halbleiterbauteils

Country Status (5)

Country Link
US (1) US20240079469A1 (https=)
JP (1) JPWO2022215471A1 (https=)
CN (1) CN117157769A (https=)
DE (1) DE112022001382T5 (https=)
WO (1) WO2022215471A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022184315A (ja) * 2021-06-01 2022-12-13 株式会社東芝 半導体装置
EP4718988A1 (en) * 2024-09-25 2026-04-01 Hitachi Energy Ltd Method for producing a first contact layer and a second contact layer on a power semiconductor body, and power semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5564884B2 (ja) * 2009-10-08 2014-08-06 住友電気工業株式会社 ショットキーバリアダイオード
JP6584880B2 (ja) * 2015-09-11 2019-10-02 株式会社東芝 半導体装置
JP2017079315A (ja) * 2015-10-22 2017-04-27 トヨタ自動車株式会社 半導体装置とその製造方法
JP2017168561A (ja) * 2016-03-15 2017-09-21 富士電機株式会社 半導体装置及びその製造方法
JP6977465B2 (ja) * 2017-10-06 2021-12-08 株式会社デンソー 半導体装置の製造方法
JP7090530B2 (ja) * 2018-11-15 2022-06-24 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
DE102018133433B4 (de) * 2018-12-21 2023-07-06 Infineon Technologies Ag Siliziumcarbid-Körper enthaltende Halbleitervorrichtung und Herstellungsverfahren
JP7369302B2 (ja) * 2020-08-27 2023-10-25 新電元工業株式会社 ワイドギャップ半導体装置

Also Published As

Publication number Publication date
CN117157769A (zh) 2023-12-01
WO2022215471A1 (ja) 2022-10-13
US20240079469A1 (en) 2024-03-07
JPWO2022215471A1 (https=) 2022-10-13

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Legal Events

Date Code Title Description
R012 Request for examination validly filed
R081 Change of applicant/patentee

Owner name: ROHM CO., LTD., JP

Free format text: FORMER OWNER: ROHM CO. LTD, KYOTO, JP

R016 Response to examination communication
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0029470000

Ipc: H10D0064640000