DE112017001965B4 - Verfahren zur Bestimmung der Kohlenstoffkonzentration einer Siliciumprobe und Verfahren zur Herstellung eines Siliciumeinkristallingots - Google Patents

Verfahren zur Bestimmung der Kohlenstoffkonzentration einer Siliciumprobe und Verfahren zur Herstellung eines Siliciumeinkristallingots

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Publication number
DE112017001965B4
DE112017001965B4 DE112017001965.6T DE112017001965T DE112017001965B4 DE 112017001965 B4 DE112017001965 B4 DE 112017001965B4 DE 112017001965 T DE112017001965 T DE 112017001965T DE 112017001965 B4 DE112017001965 B4 DE 112017001965B4
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Germany
Prior art keywords
silicon
determined
carbon concentration
silicon sample
sample
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DE112017001965.6T
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German (de)
English (en)
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DE112017001965T5 (de
Inventor
Kazutaka ERIGUCHI
Shuichi Samata
Noritomo Mitsugi
Ayumi MASADA
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Sumco Corp
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Sumco Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G01N27/24—Investigating the presence of flaws
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N31/00—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods
    • G01N31/12—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods using combustion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Combustion & Propulsion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
DE112017001965.6T 2016-04-11 2017-01-18 Verfahren zur Bestimmung der Kohlenstoffkonzentration einer Siliciumprobe und Verfahren zur Herstellung eines Siliciumeinkristallingots Active DE112017001965B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-078579 2016-04-11
JP2016078579A JP6528710B2 (ja) 2016-04-11 2016-04-11 シリコン試料の炭素濃度測定方法およびシリコン単結晶インゴットの製造方法
PCT/JP2017/001443 WO2017179254A1 (ja) 2016-04-11 2017-01-18 シリコン試料の炭素濃度測定方法、シリコン単結晶インゴットの製造方法、シリコン単結晶インゴットおよびシリコンウェーハ

Publications (2)

Publication Number Publication Date
DE112017001965T5 DE112017001965T5 (de) 2019-01-17
DE112017001965B4 true DE112017001965B4 (de) 2026-06-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE112017001965.6T Active DE112017001965B4 (de) 2016-04-11 2017-01-18 Verfahren zur Bestimmung der Kohlenstoffkonzentration einer Siliciumprobe und Verfahren zur Herstellung eines Siliciumeinkristallingots

Country Status (7)

Country Link
US (1) US10935510B2 (cg-RX-API-DMAC7.html)
JP (1) JP6528710B2 (cg-RX-API-DMAC7.html)
KR (1) KR102170149B1 (cg-RX-API-DMAC7.html)
CN (1) CN108886005B (cg-RX-API-DMAC7.html)
DE (1) DE112017001965B4 (cg-RX-API-DMAC7.html)
TW (1) TWI650823B (cg-RX-API-DMAC7.html)
WO (1) WO2017179254A1 (cg-RX-API-DMAC7.html)

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JP6528710B2 (ja) 2016-04-11 2019-06-12 株式会社Sumco シリコン試料の炭素濃度測定方法およびシリコン単結晶インゴットの製造方法
JP6531729B2 (ja) 2016-07-19 2019-06-19 株式会社Sumco シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法
JP6689494B2 (ja) * 2017-03-16 2020-04-28 信越半導体株式会社 シリコン中の炭素検出方法
JP6838713B2 (ja) * 2018-02-07 2021-03-03 信越半導体株式会社 シリコン結晶中の炭素濃度測定方法
JP6977619B2 (ja) 2018-02-28 2021-12-08 株式会社Sumco シリコン単結晶の酸素濃度推定方法、およびシリコン単結晶の製造方法
JP6950581B2 (ja) * 2018-02-28 2021-10-13 株式会社Sumco シリコン単結晶の製造方法およびシリコン単結晶の引き上げ装置
JP6950639B2 (ja) * 2018-07-20 2021-10-13 株式会社Sumco シリコン単結晶の炭素濃度測定方法及び装置
JP6645545B1 (ja) * 2018-09-03 2020-02-14 株式会社Sumco シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法
JP6645546B1 (ja) 2018-09-03 2020-02-14 株式会社Sumco シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法
JP7230746B2 (ja) * 2019-09-02 2023-03-01 株式会社Sumco 単結晶シリコンの酸素濃度又は炭素濃度の測定方法
CN113755944A (zh) * 2020-06-05 2021-12-07 西安奕斯伟材料科技有限公司 一种单晶炉热场结构、单晶炉及晶棒
JP7452314B2 (ja) 2020-07-31 2024-03-19 信越半導体株式会社 Ｆｚ用シリコン原料結晶の製造方法及びｆｚ用シリコン原料結晶の製造システム
JP7413992B2 (ja) * 2020-12-28 2024-01-16 株式会社Sumco シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法
JP7447786B2 (ja) * 2020-12-28 2024-03-12 株式会社Sumco シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法
CN112786472B (zh) * 2021-01-06 2023-01-10 电子科技大学 一种介电温度系数修正的深能级瞬态谱测试方法
JP7626052B2 (ja) * 2021-12-20 2025-02-04 株式会社Sumco シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法
CN114544855B (zh) * 2022-02-08 2024-02-02 内蒙古众元测试技术有限公司 一种废物中非金属元素含量的检测装置
CN116929864B (zh) * 2022-03-29 2026-05-01 中国石油化工股份有限公司 杂质沾污量与杂质浓度随深度半定量分布的测量方法

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JP2013152977A (ja) 2012-01-24 2013-08-08 Mitsubishi Electric Corp 不純物濃度測定方法および不純物濃度測定装置
US20150017086A1 (en) * 2013-07-12 2015-01-15 Globalwafers Japan Co., Ltd. Silicon single crystal and method for manufacture thereof
JP2015101529A (ja) 2013-11-28 2015-06-04 信越半導体株式会社 シリコン単結晶の炭素濃度測定方法
JP2015156420A (ja) 2014-02-20 2015-08-27 信越半導体株式会社 シリコン単結晶中の炭素濃度評価方法及び半導体デバイスの製造方法
JP2015222801A (ja) 2014-05-23 2015-12-10 グローバルウェーハズ・ジャパン株式会社 検量線の作成方法、不純物濃度の測定方法、及び半導体ウェハの製造方法
JP2016078579A (ja) 2014-10-15 2016-05-16 秋雄 大坪 帆走／漕走兼用ボード
JP2017191800A (ja) 2016-04-11 2017-10-19 株式会社Sumco シリコン試料の炭素濃度測定方法、シリコン単結晶インゴットの製造方法、シリコン単結晶インゴットおよびシリコンウェーハ

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JP2003045928A (ja) 2001-07-31 2003-02-14 Shin Etsu Handotai Co Ltd 半導体シリコンウェーハ中のＣｕ汚染評価方法
JP4760729B2 (ja) * 2006-02-21 2011-08-31 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
JP5524894B2 (ja) * 2011-04-04 2014-06-18 信越化学工業株式会社 多結晶シリコン中の炭素濃度測定方法
KR101419751B1 (ko) * 2012-10-18 2014-07-15 주식회사 위닉스 순간 냉각장치
JP6107068B2 (ja) 2012-11-13 2017-04-05 株式会社Sumco エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、および固体撮像素子の製造方法
JP6048381B2 (ja) * 2013-12-06 2016-12-21 信越半導体株式会社 シリコン単結晶中の炭素濃度評価方法、及び、半導体デバイスの製造方法
JP6300104B2 (ja) * 2014-12-02 2018-03-28 信越半導体株式会社 シリコン結晶の炭素濃度測定方法、シリコン結晶の炭素関連準位測定方法
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JP2013152977A (ja) 2012-01-24 2013-08-08 Mitsubishi Electric Corp 不純物濃度測定方法および不純物濃度測定装置
US20150017086A1 (en) * 2013-07-12 2015-01-15 Globalwafers Japan Co., Ltd. Silicon single crystal and method for manufacture thereof
JP2015101529A (ja) 2013-11-28 2015-06-04 信越半導体株式会社 シリコン単結晶の炭素濃度測定方法
JP2015156420A (ja) 2014-02-20 2015-08-27 信越半導体株式会社 シリコン単結晶中の炭素濃度評価方法及び半導体デバイスの製造方法
JP2015222801A (ja) 2014-05-23 2015-12-10 グローバルウェーハズ・ジャパン株式会社 検量線の作成方法、不純物濃度の測定方法、及び半導体ウェハの製造方法
JP2016078579A (ja) 2014-10-15 2016-05-16 秋雄 大坪 帆走／漕走兼用ボード
JP2017191800A (ja) 2016-04-11 2017-10-19 株式会社Sumco シリコン試料の炭素濃度測定方法、シリコン単結晶インゴットの製造方法、シリコン単結晶インゴットおよびシリコンウェーハ

Also Published As

Publication number Publication date
KR20180126530A (ko) 2018-11-27
KR102170149B1 (ko) 2020-10-26
TWI650823B (zh) 2019-02-11
CN108886005B (zh) 2023-06-06
US20190064098A1 (en) 2019-02-28
US10935510B2 (en) 2021-03-02
JP6528710B2 (ja) 2019-06-12
CN108886005A (zh) 2018-11-23
TW201802977A (zh) 2018-01-16
DE112017001965T5 (de) 2019-01-17
JP2017191800A (ja) 2017-10-19
WO2017179254A1 (ja) 2017-10-19

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