DE112012002094B4 - Siliziumcarbidpulver und Verfahren für die Herstellung von Siliziumcarbidpulver - Google Patents

Siliziumcarbidpulver und Verfahren für die Herstellung von Siliziumcarbidpulver Download PDF

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Publication number
DE112012002094B4
DE112012002094B4 DE112012002094.4T DE112012002094T DE112012002094B4 DE 112012002094 B4 DE112012002094 B4 DE 112012002094B4 DE 112012002094 T DE112012002094 T DE 112012002094T DE 112012002094 B4 DE112012002094 B4 DE 112012002094B4
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Prior art keywords
silicon carbide
carbide powder
silicon
powder
less
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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DE112012002094.4T
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German (de)
English (en)
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DE112012002094T5 (de
Inventor
Hiroki Inoue
Makoto Sasaki
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/984—Preparation from elemental silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE112012002094.4T 2011-05-18 2012-01-26 Siliziumcarbidpulver und Verfahren für die Herstellung von Siliziumcarbidpulver Expired - Fee Related DE112012002094B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011110959A JP2012240869A (ja) 2011-05-18 2011-05-18 炭化珪素粉末および炭化珪素粉末の製造方法
JP2011-110959 2011-05-18
PCT/JP2012/051621 WO2012157293A1 (ja) 2011-05-18 2012-01-26 炭化珪素粉末および炭化珪素粉末の製造方法

Publications (2)

Publication Number Publication Date
DE112012002094T5 DE112012002094T5 (de) 2014-07-24
DE112012002094B4 true DE112012002094B4 (de) 2014-12-24

Family

ID=47175131

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112012002094.4T Expired - Fee Related DE112012002094B4 (de) 2011-05-18 2012-01-26 Siliziumcarbidpulver und Verfahren für die Herstellung von Siliziumcarbidpulver

Country Status (5)

Country Link
US (1) US20120295112A1 (enExample)
JP (1) JP2012240869A (enExample)
CN (1) CN102958834A (enExample)
DE (1) DE112012002094B4 (enExample)
WO (1) WO2012157293A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9630854B2 (en) 2013-06-26 2017-04-25 Bridgestone Corporation Silicon carbide powder
KR102092280B1 (ko) * 2013-08-29 2020-03-23 엘지이노텍 주식회사 탄화규소 분말
KR102092279B1 (ko) * 2013-08-29 2020-03-23 엘지이노텍 주식회사 탄화규소 분말
JP6304477B2 (ja) * 2013-09-04 2018-04-04 太平洋セメント株式会社 炭化珪素粉粒体及びその製造方法
DE112014004056T5 (de) 2013-09-06 2016-06-02 Gtat Corporation Verfahren und Apparatur zur Herstellung von Massen-Siliciumcarbid aus einem Siliciumcarbid-Vorläufer
JP6337389B2 (ja) * 2013-12-06 2018-06-06 太平洋セメント株式会社 炭化珪素粉粒体の製造方法
CN105603530B (zh) * 2016-01-12 2018-02-27 台州市一能科技有限公司 用于碳化硅晶体高速生长的原料及碳化硅晶体的生长方法
JP6809912B2 (ja) * 2017-01-25 2021-01-06 太平洋セメント株式会社 炭化珪素粉末、その製造方法、及び炭化珪素単結晶の製造方法
JP7000104B2 (ja) * 2017-10-04 2022-01-19 キヤノン株式会社 造形方法および造形用の粉末材料
JP7442288B2 (ja) * 2019-09-30 2024-03-04 株式会社フジミインコーポレーテッド セラミックス粉末
CN111172593B (zh) * 2020-03-06 2021-01-29 福建三邦硅材料有限公司 一种碳化硅晶体的生长方法
KR102442730B1 (ko) * 2021-12-23 2022-09-13 주식회사 쎄닉 탄화규소 분말, 이를 이용하여 탄화규소 잉곳을 제조하는 방법 및 탄화규소 웨이퍼
KR20240151759A (ko) 2022-02-24 2024-10-18 가부시키가이샤 도쿠야마 탄화규소 분말 및 그의 제조 방법
WO2024122174A1 (ja) 2022-12-09 2024-06-13 株式会社トクヤマ 炭化ケイ素粉末及びその製造方法
CN120518079B (zh) * 2025-07-24 2025-11-11 通威微电子有限公司 一种碳化硅晶体生长用粒径可控碳化硅粉料及其合成方法和应用

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000004211A1 (de) * 1998-07-13 2000-01-27 Siemens Aktiengesellschaft VERFAHREN ZUR ZÜCHTUNG VON SiC-EINKRISTALLEN
JP2001180919A (ja) * 1999-12-24 2001-07-03 Sumitomo Electric Ind Ltd 炭化珪素−炭素系複合粉末とそれを用いた複合材料
JP2005239496A (ja) * 2004-02-27 2005-09-08 Nippon Steel Corp 炭化珪素単結晶育成用炭化珪素原料と炭化珪素単結晶及びその製造方法
JP2005314217A (ja) * 2004-03-29 2005-11-10 Nippon Steel Corp 炭化珪素単結晶およびその製造方法
WO2009075935A1 (en) * 2007-12-12 2009-06-18 Dow Corning Corporation Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1142332C (zh) * 2001-03-13 2004-03-17 中国科学院山西煤炭化学研究所 一种制备碳化硅纤维或织物的方法
US20040043888A1 (en) * 2002-08-28 2004-03-04 Noritake Co., Limited Compositions and methods for making microporous ceramic materials
JP5049590B2 (ja) * 2004-12-28 2012-10-17 パナソニック株式会社 炭化珪素（ＳｉＣ）単結晶の製造方法
CN100560486C (zh) * 2007-07-30 2009-11-18 中国地质大学（武汉） 一种制备纳米碳化硅的方法
JP2009173501A (ja) * 2008-01-28 2009-08-06 Bridgestone Corp 炭化ケイ素単結晶製造用高純度炭化ケイ素粉体の製造方法及び炭化ケイ素単結晶
CN101525134B (zh) * 2009-04-02 2010-10-06 山东大学 一种用废塑料低温制备立方碳化硅超细粉的方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000004211A1 (de) * 1998-07-13 2000-01-27 Siemens Aktiengesellschaft VERFAHREN ZUR ZÜCHTUNG VON SiC-EINKRISTALLEN
JP2001180919A (ja) * 1999-12-24 2001-07-03 Sumitomo Electric Ind Ltd 炭化珪素−炭素系複合粉末とそれを用いた複合材料
JP2005239496A (ja) * 2004-02-27 2005-09-08 Nippon Steel Corp 炭化珪素単結晶育成用炭化珪素原料と炭化珪素単結晶及びその製造方法
JP2005314217A (ja) * 2004-03-29 2005-11-10 Nippon Steel Corp 炭化珪素単結晶およびその製造方法
WO2009075935A1 (en) * 2007-12-12 2009-06-18 Dow Corning Corporation Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes

Also Published As

Publication number Publication date
DE112012002094T5 (de) 2014-07-24
US20120295112A1 (en) 2012-11-22
JP2012240869A (ja) 2012-12-10
WO2012157293A1 (ja) 2012-11-22
CN102958834A (zh) 2013-03-06

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