CN102958834A - 碳化硅粉末和制造碳化硅粉末的方法 - Google Patents

碳化硅粉末和制造碳化硅粉末的方法 Download PDF

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Publication number
CN102958834A
CN102958834A CN201280001101XA CN201280001101A CN102958834A CN 102958834 A CN102958834 A CN 102958834A CN 201280001101X A CN201280001101X A CN 201280001101XA CN 201280001101 A CN201280001101 A CN 201280001101A CN 102958834 A CN102958834 A CN 102958834A
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silicon carbide
carbide powder
powder
silicon
less
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CN201280001101XA
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Chinese (zh)
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佐佐木信
井上博挥
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Publication of CN102958834A publication Critical patent/CN102958834A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/984—Preparation from elemental silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201280001101XA 2011-05-18 2012-01-26 碳化硅粉末和制造碳化硅粉末的方法 Pending CN102958834A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011110959A JP2012240869A (ja) 2011-05-18 2011-05-18 炭化珪素粉末および炭化珪素粉末の製造方法
JP2011-110959 2011-05-18
PCT/JP2012/051621 WO2012157293A1 (ja) 2011-05-18 2012-01-26 炭化珪素粉末および炭化珪素粉末の製造方法

Publications (1)

Publication Number Publication Date
CN102958834A true CN102958834A (zh) 2013-03-06

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CN201280001101XA Pending CN102958834A (zh) 2011-05-18 2012-01-26 碳化硅粉末和制造碳化硅粉末的方法

Country Status (5)

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US (1) US20120295112A1 (enExample)
JP (1) JP2012240869A (enExample)
CN (1) CN102958834A (enExample)
DE (1) DE112012002094B4 (enExample)
WO (1) WO2012157293A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105324332A (zh) * 2013-06-26 2016-02-10 株式会社普利司通 碳化硅粉体
CN105603530A (zh) * 2016-01-12 2016-05-25 台州市一能科技有限公司 用于碳化硅晶体高速生长的原料及碳化硅晶体的生长方法
CN109607537A (zh) * 2017-10-04 2019-04-12 佳能株式会社 造型方法和造型粉末材料
CN111172593A (zh) * 2020-03-06 2020-05-19 福建三邦硅材料有限公司 一种碳化硅晶体的生长方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102092280B1 (ko) * 2013-08-29 2020-03-23 엘지이노텍 주식회사 탄화규소 분말
KR102092279B1 (ko) * 2013-08-29 2020-03-23 엘지이노텍 주식회사 탄화규소 분말
JP6304477B2 (ja) * 2013-09-04 2018-04-04 太平洋セメント株式会社 炭化珪素粉粒体及びその製造方法
DE112014004056T5 (de) 2013-09-06 2016-06-02 Gtat Corporation Verfahren und Apparatur zur Herstellung von Massen-Siliciumcarbid aus einem Siliciumcarbid-Vorläufer
JP6337389B2 (ja) * 2013-12-06 2018-06-06 太平洋セメント株式会社 炭化珪素粉粒体の製造方法
JP6809912B2 (ja) * 2017-01-25 2021-01-06 太平洋セメント株式会社 炭化珪素粉末、その製造方法、及び炭化珪素単結晶の製造方法
JP7442288B2 (ja) * 2019-09-30 2024-03-04 株式会社フジミインコーポレーテッド セラミックス粉末
KR102442730B1 (ko) * 2021-12-23 2022-09-13 주식회사 쎄닉 탄화규소 분말, 이를 이용하여 탄화규소 잉곳을 제조하는 방법 및 탄화규소 웨이퍼
KR20240151759A (ko) 2022-02-24 2024-10-18 가부시키가이샤 도쿠야마 탄화규소 분말 및 그의 제조 방법
WO2024122174A1 (ja) 2022-12-09 2024-06-13 株式会社トクヤマ 炭化ケイ素粉末及びその製造方法
CN120518079B (zh) * 2025-07-24 2025-11-11 通威微电子有限公司 一种碳化硅晶体生长用粒径可控碳化硅粉料及其合成方法和应用

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001180919A (ja) * 1999-12-24 2001-07-03 Sumitomo Electric Ind Ltd 炭化珪素−炭素系複合粉末とそれを用いた複合材料
JP2002520251A (ja) * 1998-07-13 2002-07-09 シーメンス アクチエンゲゼルシヤフト ＳｉＣ単結晶の成長方法
CN1374416A (zh) * 2001-03-13 2002-10-16 中国科学院山西煤炭化学研究所 一种制备碳化硅纤维或织物的方法
JP2005239496A (ja) * 2004-02-27 2005-09-08 Nippon Steel Corp 炭化珪素単結晶育成用炭化珪素原料と炭化珪素単結晶及びその製造方法
JP2005314217A (ja) * 2004-03-29 2005-11-10 Nippon Steel Corp 炭化珪素単結晶およびその製造方法
CN1922346A (zh) * 2004-12-28 2007-02-28 松下电器产业株式会社 碳化硅(SiC)单晶的制造方法以及通过该方法得到的碳化硅(SiC)单晶
CN101157452A (zh) * 2007-07-30 2008-04-09 中国地质大学（武汉） 一种制备纳米碳化硅的方法
CN101525134A (zh) * 2009-04-02 2009-09-09 山东大学 一种用废塑料低温制备立方碳化硅超细粉的方法
CN101896646A (zh) * 2007-12-12 2010-11-24 陶氏康宁公司 通过升华/凝结方法生产大的均匀碳化硅晶锭的方法

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US20040043888A1 (en) * 2002-08-28 2004-03-04 Noritake Co., Limited Compositions and methods for making microporous ceramic materials
JP2009173501A (ja) * 2008-01-28 2009-08-06 Bridgestone Corp 炭化ケイ素単結晶製造用高純度炭化ケイ素粉体の製造方法及び炭化ケイ素単結晶

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002520251A (ja) * 1998-07-13 2002-07-09 シーメンス アクチエンゲゼルシヤフト ＳｉＣ単結晶の成長方法
JP2001180919A (ja) * 1999-12-24 2001-07-03 Sumitomo Electric Ind Ltd 炭化珪素−炭素系複合粉末とそれを用いた複合材料
CN1374416A (zh) * 2001-03-13 2002-10-16 中国科学院山西煤炭化学研究所 一种制备碳化硅纤维或织物的方法
JP2005239496A (ja) * 2004-02-27 2005-09-08 Nippon Steel Corp 炭化珪素単結晶育成用炭化珪素原料と炭化珪素単結晶及びその製造方法
JP2005314217A (ja) * 2004-03-29 2005-11-10 Nippon Steel Corp 炭化珪素単結晶およびその製造方法
CN1922346A (zh) * 2004-12-28 2007-02-28 松下电器产业株式会社 碳化硅(SiC)单晶的制造方法以及通过该方法得到的碳化硅(SiC)单晶
CN101157452A (zh) * 2007-07-30 2008-04-09 中国地质大学（武汉） 一种制备纳米碳化硅的方法
CN101896646A (zh) * 2007-12-12 2010-11-24 陶氏康宁公司 通过升华/凝结方法生产大的均匀碳化硅晶锭的方法
CN101525134A (zh) * 2009-04-02 2009-09-09 山东大学 一种用废塑料低温制备立方碳化硅超细粉的方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105324332A (zh) * 2013-06-26 2016-02-10 株式会社普利司通 碳化硅粉体
US9630854B2 (en) 2013-06-26 2017-04-25 Bridgestone Corporation Silicon carbide powder
CN105324332B (zh) * 2013-06-26 2018-08-03 株式会社普利司通 碳化硅粉体
CN105603530A (zh) * 2016-01-12 2016-05-25 台州市一能科技有限公司 用于碳化硅晶体高速生长的原料及碳化硅晶体的生长方法
CN105603530B (zh) * 2016-01-12 2018-02-27 台州市一能科技有限公司 用于碳化硅晶体高速生长的原料及碳化硅晶体的生长方法
CN109607537A (zh) * 2017-10-04 2019-04-12 佳能株式会社 造型方法和造型粉末材料
CN111172593A (zh) * 2020-03-06 2020-05-19 福建三邦硅材料有限公司 一种碳化硅晶体的生长方法

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DE112012002094T5 (de) 2014-07-24
DE112012002094B4 (de) 2014-12-24
US20120295112A1 (en) 2012-11-22
JP2012240869A (ja) 2012-12-10
WO2012157293A1 (ja) 2012-11-22

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Application publication date: 20130306