DE112010000771T8 - Verfahren zum Schneiden eines Substrats und Verfahren zur Herstellung eines elektronischen Bauelements - Google Patents

Verfahren zum Schneiden eines Substrats und Verfahren zur Herstellung eines elektronischen Bauelements Download PDF

Info

Publication number
DE112010000771T8
DE112010000771T8 DE112010000771T DE112010000771T DE112010000771T8 DE 112010000771 T8 DE112010000771 T8 DE 112010000771T8 DE 112010000771 T DE112010000771 T DE 112010000771T DE 112010000771 T DE112010000771 T DE 112010000771T DE 112010000771 T8 DE112010000771 T8 DE 112010000771T8
Authority
DE
Germany
Prior art keywords
cutting
producing
substrate
electronic component
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE112010000771T
Other languages
English (en)
Other versions
DE112010000771B4 (de
DE112010000771T5 (de
Inventor
Yoshiharu Saegusa
Susumu Sugano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Publication of DE112010000771T5 publication Critical patent/DE112010000771T5/de
Publication of DE112010000771T8 publication Critical patent/DE112010000771T8/de
Application granted granted Critical
Publication of DE112010000771B4 publication Critical patent/DE112010000771B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/359Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/52Ceramics
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/54Glass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0095Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
DE112010000771.3T 2009-01-29 2010-01-19 Verfahren zum Schneiden eines Substrats Expired - Fee Related DE112010000771B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-017512 2009-01-29
JP2009017512A JP5121746B2 (ja) 2009-01-29 2009-01-29 基板切断方法および電子素子の製造方法
PCT/JP2010/050557 WO2010087249A1 (ja) 2009-01-29 2010-01-19 基板切断方法および電子素子の製造方法

Publications (3)

Publication Number Publication Date
DE112010000771T5 DE112010000771T5 (de) 2012-07-26
DE112010000771T8 true DE112010000771T8 (de) 2012-10-25
DE112010000771B4 DE112010000771B4 (de) 2015-06-18

Family

ID=42395510

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112010000771.3T Expired - Fee Related DE112010000771B4 (de) 2009-01-29 2010-01-19 Verfahren zum Schneiden eines Substrats

Country Status (6)

Country Link
US (1) US8470691B2 (de)
JP (1) JP5121746B2 (de)
KR (1) KR101240712B1 (de)
CN (1) CN102265386B (de)
DE (1) DE112010000771B4 (de)
WO (1) WO2010087249A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011189477A (ja) * 2010-03-16 2011-09-29 Disco Corp マイクロマシンデバイスの製造方法
KR101279348B1 (ko) * 2011-06-24 2013-07-04 주식회사 에스에프이 엘이디 패키지 트리밍 장치
KR101232832B1 (ko) * 2011-07-29 2013-02-13 조상용 패키지 설비의 브레이킹 장치
JP5862156B2 (ja) * 2011-09-26 2016-02-16 日産自動車株式会社 界磁極用磁石体の製造装置およびその製造方法
CN103187406A (zh) * 2011-12-27 2013-07-03 展晶科技(深圳)有限公司 发光二极管封装结构及封装方法
KR101909633B1 (ko) * 2011-12-30 2018-12-19 삼성전자 주식회사 레이저 스크라이빙을 이용한 발광소자 칩 웨이퍼의 절단 방법
DE102012215220A1 (de) * 2012-08-28 2014-03-06 Osram Opto Semiconductors Gmbh Mehoden zur Farbortsteuerung von elektro-optischen Bauteilen mit Konversionselementen
US8809166B2 (en) * 2012-12-20 2014-08-19 Nxp B.V. High die strength semiconductor wafer processing method and system
US9165832B1 (en) * 2014-06-30 2015-10-20 Applied Materials, Inc. Method of die singulation using laser ablation and induction of internal defects with a laser
JP2016043503A (ja) * 2014-08-20 2016-04-04 三星ダイヤモンド工業株式会社 脆性材料基板の分断方法、脆性材料基板分断用の基板保持部材、および、脆性材料基板の分断時に使用する粘着フィルム張設用の枠体
JP6428113B2 (ja) * 2014-09-30 2018-11-28 三星ダイヤモンド工業株式会社 パターニング基板のブレイク方法並びにブレイク装置
JP6265175B2 (ja) 2015-06-30 2018-01-24 日亜化学工業株式会社 半導体素子の製造方法
WO2018150432A1 (en) * 2017-02-20 2018-08-23 Marcus Etgar Digital systems and processes for cutting and creasing corrugated cardboards
US10516075B2 (en) 2017-09-11 2019-12-24 Nichia Corporation Method of manufacturing a light emitting element
JP6656597B2 (ja) * 2017-09-11 2020-03-04 日亜化学工業株式会社 発光素子の製造方法
JP7028607B2 (ja) * 2017-11-06 2022-03-02 株式会社ディスコ 切削装置
JP2019177694A (ja) * 2019-04-10 2019-10-17 三星ダイヤモンド工業株式会社 ブレーク装置
JP7323323B2 (ja) * 2019-04-18 2023-08-08 株式会社ディスコ 分割装置
CN115188684A (zh) * 2022-06-21 2022-10-14 大族激光科技产业集团股份有限公司 一种检测晶圆断裂的方法、切割装置以及切割设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61280906A (ja) * 1985-06-07 1986-12-11 三菱電機株式会社 ウエハのブレ−ク装置
DE4006070A1 (de) * 1990-02-27 1991-09-12 Braun Ag Verfahren und einrichtung zum zerteilen einer scheibe aus halbleitermaterial
JP3779237B2 (ja) 2002-07-04 2006-05-24 住友電気工業株式会社 基板切断方法及び基板切断装置
JP4238041B2 (ja) * 2003-02-06 2009-03-11 アドバンスト ダイシング テクノロジース リミテッド ダイシング装置、ダイシング方法及び半導体装置の製造方法
JP4694845B2 (ja) 2005-01-05 2011-06-08 株式会社ディスコ ウエーハの分割方法
JP2006245263A (ja) * 2005-03-03 2006-09-14 Sony Corp 基板ブレイク装置および基板ブレイク方法ならびに半導体装置
JP4322881B2 (ja) * 2006-03-14 2009-09-02 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP2008069063A (ja) * 2006-09-15 2008-03-27 Alps Engineering Co Ltd ガラスパネル切断装置
JP2008124060A (ja) 2006-11-08 2008-05-29 Showa Denko Kk Iii族窒化物化合物半導体発光素子の製造方法、及びiii族窒化物化合物半導体発光素子、並びにランプ
KR20100045135A (ko) * 2008-10-23 2010-05-03 세메스 주식회사 기판 절단 장치 및 이를 이용한 기판 절단 방법

Also Published As

Publication number Publication date
CN102265386B (zh) 2014-03-12
US8470691B2 (en) 2013-06-25
US20110287608A1 (en) 2011-11-24
JP2010177395A (ja) 2010-08-12
KR101240712B1 (ko) 2013-03-11
DE112010000771B4 (de) 2015-06-18
JP5121746B2 (ja) 2013-01-16
WO2010087249A1 (ja) 2010-08-05
KR20110063808A (ko) 2011-06-14
CN102265386A (zh) 2011-11-30
DE112010000771T5 (de) 2012-07-26

Similar Documents

Publication Publication Date Title
DE112010000771T8 (de) Verfahren zum Schneiden eines Substrats und Verfahren zur Herstellung eines elektronischen Bauelements
DE112009000756A5 (de) Verfahren zur Herstellung eines elektronischen Bauelements und elektronisches BAuelement
DE112010004178T8 (de) Piezoelektrisches Bauelement und Verfahren zur Herstellung eines piezoelektrischen Bauelements
DE602007011917D1 (de) Verfahren zur herstellung eines iii-n-volumenkristalls und eines freistehenden iii-n-substrats und iii-n-volumenkristall und freistehendes iii-n-substrat
DE102009044474A8 (de) Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
ATE466124T1 (de) Verfahren und vorrichtung zur herstellung eines spinnvlieses
DE602007003114D1 (de) Verfahren zur Herstellung eines Werkstückes mit Überprüfung des Objektes
DE112011102705A5 (de) Verfahren zur Kapselung einer elektronischen Anordnung
ATE483052T1 (de) Verfahren und vorrichtung zur herstellung eines spinnvlieses
DE602008001998D1 (de) Verfahren zur Beurteilung eines Halbleitersubstrats
ATE526662T1 (de) Vorrichtung und verfahren zur änderung eines audiosignals
DE102007017831B8 (de) Halbleitermodul und ein Verfahren zur Herstellung eines Halbleitermoduls
IL209796A0 (en) Apparatus and method for inspecting a substrate
DE112009002070A5 (de) Schaltung sowie Verfahren zur Ansteuerung eines trimorphen Piezoaktors
DE112010003191B8 (de) Verfahren zur Herstellung eines Leistungsmoduls
DE112008000046A5 (de) Verfahren zur Herstellung eines Kabelschuhs und Kabelschuh
DE112010002853A5 (de) Verfahren zur herstellung eines hubübertragungsbauteils
DE102010035958B8 (de) Vorrichtung und Verfahren zur Herstellung eines Bauteils sowie Flugzeugstrukturbauteil
DE112007001616A5 (de) Verbundsubstrat und Verfahren zur Herstellung eines Verbundsubstrats
DE112010002056A5 (de) Vorrichtung und Verfahren zur Identifizierung des Urhebers eines Kunstwerks
DE112009004628A5 (de) Verfahren zur Herstellung eines optoelektronischen Bauelements, optoelektronisches Bauelement und Bauelementanordnung mit mehreren optoelektronischen Bauelementen
DE602006014123D1 (de) Vorrichtung und Verfahren um eine Schicht anzuhaften
ATE529263T1 (de) Verfahren zur herstellung eines trägers und träger
DE112010004036T8 (de) Vorrichtung und Verfahren zum Montieren von elektronischen Bauelementen
DE602007002876D1 (de) Werkzeug und Verfahren zur Errichtung eines Turmsegments

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R082 Change of representative

Representative=s name: STREHL, SCHUEBEL-HOPF & PARTNER, DE

R081 Change of applicant/patentee

Owner name: TOYODA GOSEI CO., LTD., KIYOSU-SHI, JP

Free format text: FORMER OWNER: SHOWA DENKO K.K., MINATO-KU, TOKYO, JP

Effective date: 20121218

Owner name: TOYODA GOSEI CO., LTD., JP

Free format text: FORMER OWNER: SHOWA DENKO K.K., MINATO-KU, JP

Effective date: 20121218

R082 Change of representative

Representative=s name: PATENTANWAELTE STREHL, SCHUEBEL-HOPF & PARTNER, DE

Effective date: 20121218

Representative=s name: STREHL SCHUEBEL-HOPF & PARTNER MBB PATENTANWAE, DE

Effective date: 20121218

Representative=s name: STREHL, SCHUEBEL-HOPF & PARTNER, DE

Effective date: 20121218

R016 Response to examination communication
R016 Response to examination communication
R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee