DE112010004178T8 - Piezoelektrisches Bauelement und Verfahren zur Herstellung eines piezoelektrischen Bauelements - Google Patents

Piezoelektrisches Bauelement und Verfahren zur Herstellung eines piezoelektrischen Bauelements Download PDF

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Publication number
DE112010004178T8
DE112010004178T8 DE112010004178T DE112010004178T DE112010004178T8 DE 112010004178 T8 DE112010004178 T8 DE 112010004178T8 DE 112010004178 T DE112010004178 T DE 112010004178T DE 112010004178 T DE112010004178 T DE 112010004178T DE 112010004178 T8 DE112010004178 T8 DE 112010004178T8
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Germany
Prior art keywords
piezoelectric component
producing
piezoelectric
component
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Active
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DE112010004178T
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English (en)
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DE112010004178B4 (de
DE112010004178T5 (de
Inventor
Takashi Iwamoto
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Publication of DE112010004178B4 publication Critical patent/DE112010004178B4/de
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/1051—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/10513—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/10516—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0504—Holders; Supports for bulk acoustic wave devices
    • H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
    • H03H9/0523—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps for flip-chip mounting
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
DE112010004178.4T 2009-10-30 2010-10-26 Piezoelektrisches Bauelement und Verfahren zur Herstellung eines piezoelektrischen Bauelements Active DE112010004178B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-250121 2009-10-30
JP2009250121 2009-10-30
PCT/JP2010/068886 WO2011052551A1 (ja) 2009-10-30 2010-10-26 圧電デバイスおよび圧電デバイスの製造方法

Publications (3)

Publication Number Publication Date
DE112010004178T5 DE112010004178T5 (de) 2012-12-06
DE112010004178T8 true DE112010004178T8 (de) 2013-02-07
DE112010004178B4 DE112010004178B4 (de) 2018-08-23

Family

ID=43921974

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112010004178.4T Active DE112010004178B4 (de) 2009-10-30 2010-10-26 Piezoelektrisches Bauelement und Verfahren zur Herstellung eines piezoelektrischen Bauelements

Country Status (4)

Country Link
US (2) US8889452B2 (de)
JP (1) JP5229399B2 (de)
DE (1) DE112010004178B4 (de)
WO (1) WO2011052551A1 (de)

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JP4582235B2 (ja) * 2008-10-31 2010-11-17 株式会社村田製作所 圧電デバイスの製造方法
WO2012057137A1 (ja) * 2010-10-28 2012-05-03 京セラ株式会社 電子装置
WO2013018603A1 (ja) * 2011-07-29 2013-02-07 株式会社村田製作所 弾性波デバイスの製造方法
JP5835329B2 (ja) * 2011-07-29 2015-12-24 株式会社村田製作所 圧電デバイス、および、圧電デバイスの製造方法
US8723277B2 (en) * 2012-02-29 2014-05-13 Infineon Technologies Ag Tunable MEMS device and method of making a tunable MEMS device
JP2013214954A (ja) * 2012-03-07 2013-10-17 Taiyo Yuden Co Ltd 共振子、周波数フィルタ、デュプレクサ、電子機器及び共振子の製造方法
JP6092535B2 (ja) * 2012-07-04 2017-03-08 太陽誘電株式会社 ラム波デバイスおよびその製造方法
US9646874B1 (en) * 2013-08-05 2017-05-09 Sandia Corporation Thermally-isolated silicon-based integrated circuits and related methods
JP6460111B2 (ja) * 2014-08-05 2019-01-30 株式会社村田製作所 圧電共振器の製造方法および圧電共振器
WO2016067924A1 (ja) 2014-10-27 2016-05-06 株式会社村田製作所 圧電デバイス、及び圧電デバイスの製造方法
JP6417849B2 (ja) * 2014-10-27 2018-11-07 株式会社村田製作所 圧電共振器、及び圧電共振器の製造方法
WO2016072270A1 (ja) * 2014-11-05 2016-05-12 株式会社村田製作所 圧電デバイス
WO2016093020A1 (ja) 2014-12-08 2016-06-16 株式会社村田製作所 圧電デバイス、及び圧電デバイスの製造方法
WO2016098526A1 (ja) * 2014-12-18 2016-06-23 株式会社村田製作所 弾性波装置及びその製造方法
WO2016103925A1 (ja) * 2014-12-25 2016-06-30 株式会社村田製作所 弾性波装置及びその製造方法
US10855250B2 (en) * 2016-07-11 2020-12-01 Akoustis, Inc. Communication filter for LTE band 41
US10256786B1 (en) * 2016-07-11 2019-04-09 Akoustis, Inc. Communication filter using single crystal acoustic resonator devices
US10601391B2 (en) * 2016-11-15 2020-03-24 Global Communication Semiconductors, Llc. Film bulk acoustic resonator with spurious resonance suppression
US11736088B2 (en) * 2016-11-15 2023-08-22 Global Communication Semiconductors, Llc Film bulk acoustic resonator with spurious resonance suppression
DE102017102190B4 (de) * 2017-02-03 2020-06-04 Infineon Technologies Ag Membranbauteile und Verfahren zum Bilden eines Membranbauteils
US11764750B2 (en) 2018-07-20 2023-09-19 Global Communication Semiconductors, Llc Support structure for bulk acoustic wave resonator
JP7290941B2 (ja) 2018-12-27 2023-06-14 太陽誘電株式会社 弾性波デバイス、フィルタおよびマルチプレクサ
US11817839B2 (en) 2019-03-28 2023-11-14 Global Communication Semiconductors, Llc Single-crystal bulk acoustic wave resonator and method of making thereof
US20220337212A1 (en) * 2019-09-05 2022-10-20 Changzhou Chemsemi Co., Ltd. Bulk acoustic wave resonance device and bulk acoustic wave filter
US20210111699A1 (en) 2019-10-15 2021-04-15 Global Communication Semiconductors, Llc Bulk Acoustic Wave Resonator with Multilayer Base
CN110995196B (zh) * 2019-12-05 2023-11-10 瑞声科技(新加坡)有限公司 谐振器的制备方法和谐振器
WO2021109090A1 (zh) * 2019-12-05 2021-06-10 瑞声声学科技(深圳)有限公司 谐振器的制备方法和谐振器
CN116941183A (zh) * 2021-03-01 2023-10-24 株式会社村田制作所 弹性波装置
WO2022210687A1 (ja) * 2021-03-31 2022-10-06 株式会社村田製作所 弾性波装置
CN117083801A (zh) * 2021-03-31 2023-11-17 株式会社村田制作所 弹性波装置
WO2023033147A1 (ja) * 2021-09-06 2023-03-09 株式会社村田製作所 弾性波装置
WO2023085362A1 (ja) * 2021-11-11 2023-05-19 株式会社村田製作所 弾性波装置
CN114553163B (zh) * 2022-04-28 2022-09-06 深圳新声半导体有限公司 体声波谐振器的制造方法
CN114900147B (zh) * 2022-07-08 2022-11-01 深圳新声半导体有限公司 体声波谐振器及其制造方法
US20230188116A1 (en) * 2022-09-16 2023-06-15 Shenzhen Newsonic Technologies Co., Ltd. Structure and manufacturing method of surface acoustic wave filter with back electrode of piezoelectric layer
US20230188117A1 (en) * 2022-09-16 2023-06-15 Shenzhen Newsonic Technologies Co., Ltd. Structure and manufacturing method of surface acoustic wave filter with interdigital transducer
US20230011477A1 (en) * 2022-09-16 2023-01-12 Shenzhen Newsonic Technologies Co., Ltd. Structure and manufacturing method of surface acoustic wave filter with back electrode of piezoelectric layer

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JPS6276913A (ja) * 1985-09-30 1987-04-09 Toshiba Corp 薄膜弾性波装置
JP2000196407A (ja) * 1998-12-28 2000-07-14 Tdk Corp 弾性表面波装置
JP2003017967A (ja) 2001-06-29 2003-01-17 Toshiba Corp 弾性表面波素子及びその製造方法
JP2004312201A (ja) * 2003-04-04 2004-11-04 Murata Mfg Co Ltd 圧電共振子、その製造方法、圧電フィルタ、デュプレクサ、通信装置
JP4627269B2 (ja) 2006-02-24 2011-02-09 日本碍子株式会社 圧電薄膜デバイスの製造方法
JP4877966B2 (ja) 2006-03-08 2012-02-15 日本碍子株式会社 圧電薄膜デバイス
JP4866210B2 (ja) 2006-11-08 2012-02-01 信越化学工業株式会社 単結晶シリコン太陽電池の製造方法
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Also Published As

Publication number Publication date
JPWO2011052551A1 (ja) 2013-03-21
DE112010004178B4 (de) 2018-08-23
JP5229399B2 (ja) 2013-07-03
WO2011052551A1 (ja) 2011-05-05
US9123885B2 (en) 2015-09-01
DE112010004178T5 (de) 2012-12-06
US20150035413A1 (en) 2015-02-05
US20120205754A1 (en) 2012-08-16
US8889452B2 (en) 2014-11-18

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