DE602007011917D1 - Verfahren zur herstellung eines iii-n-volumenkristalls und eines freistehenden iii-n-substrats und iii-n-volumenkristall und freistehendes iii-n-substrat - Google Patents

Verfahren zur herstellung eines iii-n-volumenkristalls und eines freistehenden iii-n-substrats und iii-n-volumenkristall und freistehendes iii-n-substrat

Info

Publication number
DE602007011917D1
DE602007011917D1 DE602007011917T DE602007011917T DE602007011917D1 DE 602007011917 D1 DE602007011917 D1 DE 602007011917D1 DE 602007011917 T DE602007011917 T DE 602007011917T DE 602007011917 T DE602007011917 T DE 602007011917T DE 602007011917 D1 DE602007011917 D1 DE 602007011917D1
Authority
DE
Germany
Prior art keywords
iii
substrate
free
standing
volume crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007011917T
Other languages
English (en)
Inventor
Gunnar Leibiger
Frank Habel
Stefan Eichler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Freiberger Compound Materials GmbH
Original Assignee
Freiberger Compound Materials GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freiberger Compound Materials GmbH filed Critical Freiberger Compound Materials GmbH
Publication of DE602007011917D1 publication Critical patent/DE602007011917D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE602007011917T 2006-05-08 2007-05-04 Verfahren zur herstellung eines iii-n-volumenkristalls und eines freistehenden iii-n-substrats und iii-n-volumenkristall und freistehendes iii-n-substrat Active DE602007011917D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US79831406P 2006-05-08 2006-05-08
PCT/EP2007/003961 WO2007128522A2 (en) 2006-05-08 2007-05-04 Process for producing a iii-n bulk crystal and a free-standing iii -n substrate, and iii -n bulk crystal and free-standing ih-n substrate

Publications (1)

Publication Number Publication Date
DE602007011917D1 true DE602007011917D1 (de) 2011-02-24

Family

ID=38198100

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007011917T Active DE602007011917D1 (de) 2006-05-08 2007-05-04 Verfahren zur herstellung eines iii-n-volumenkristalls und eines freistehenden iii-n-substrats und iii-n-volumenkristall und freistehendes iii-n-substrat

Country Status (7)

Country Link
US (1) US8048224B2 (de)
EP (1) EP2016209B1 (de)
JP (1) JP5656401B2 (de)
CN (2) CN101443488B (de)
DE (1) DE602007011917D1 (de)
PL (1) PL2016209T3 (de)
WO (1) WO2007128522A2 (de)

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US9909230B2 (en) * 2006-04-07 2018-03-06 Sixpoint Materials, Inc. Seed selection and growth methods for reduced-crack group III nitride bulk crystals
EP2038456B1 (de) * 2006-06-09 2014-03-05 Soitec Anlage und verfahren zur grossvolumigen abscheidung von galliumnitrid
US8778078B2 (en) 2006-08-09 2014-07-15 Freiberger Compound Materials Gmbh Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such
US9481943B2 (en) 2006-11-22 2016-11-01 Soitec Gallium trichloride injection scheme
US8197597B2 (en) 2006-11-22 2012-06-12 Soitec Gallium trichloride injection scheme
EP2094406B1 (de) * 2006-11-22 2015-10-14 Soitec Verfahren, vorrichtung und absperrventil für die herstellung von einkristallinen gruppe iii-v halbleiter material
WO2008064077A2 (en) 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies Methods for high volume manufacture of group iii-v semiconductor materials
US9580836B2 (en) 2006-11-22 2017-02-28 Soitec Equipment for high volume manufacture of group III-V semiconductor materials
US9481944B2 (en) 2006-11-22 2016-11-01 Soitec Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
WO2008064080A1 (en) * 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies High volume delivery system for gallium trichloride
WO2008101625A1 (de) * 2007-02-23 2008-08-28 Freiberger Compounds Materials Gmbh Verfahren zur herstellung von (al,ga)n kristallen
JP2009126723A (ja) * 2007-11-20 2009-06-11 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体結晶の成長方法、ｉｉｉ族窒化物半導体結晶基板の製造方法およびｉｉｉ族窒化物半導体結晶基板
JP5045388B2 (ja) * 2007-11-20 2012-10-10 住友電気工業株式会社 Ｉｉｉ族窒化物半導体結晶の成長方法およびｉｉｉ族窒化物半導体結晶基板の製造方法
JP5018423B2 (ja) * 2007-11-20 2012-09-05 住友電気工業株式会社 Ｉｉｉ族窒化物半導体結晶基板および半導体デバイス
JP5251893B2 (ja) * 2010-01-21 2013-07-31 日立電線株式会社 導電性ｉｉｉ族窒化物結晶の製造方法及び導電性ｉｉｉ族窒化物基板の製造方法
JP2011213557A (ja) * 2010-04-01 2011-10-27 Hitachi Cable Ltd 導電性ｉｉｉ族窒化物単結晶基板の製造方法
US20130000545A1 (en) * 2011-06-28 2013-01-03 Nitride Solutions Inc. Device and method for producing bulk single crystals
WO2015038398A1 (en) 2013-09-04 2015-03-19 Nitride Solutions, Inc. Bulk diffusion crystal growth process
JP6448155B2 (ja) * 2015-01-22 2019-01-09 シックスポイント マテリアルズ， インコーポレイテッド 低減亀裂ｉｉｉ族窒化物バルク結晶のためのシード選択および成長方法
CN107740183A (zh) * 2017-10-12 2018-02-27 北京大学 一种适用于AlN单晶生长的高温洁净腔室系统及其方法
JPWO2019167337A1 (ja) * 2018-03-01 2021-02-12 住友電気工業株式会社 炭化珪素基板
US11535951B1 (en) 2018-06-06 2022-12-27 United States Of America As Represented By The Secretary Of The Air Force Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment
WO2023214590A1 (ja) * 2022-05-06 2023-11-09 株式会社福田結晶技術研究所 高品質・低コストＧａＮ自立基板の製造方法
WO2024075328A1 (ja) * 2022-10-06 2024-04-11 日本碍子株式会社 Ｉｉｉ族元素窒化物半導体基板

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JPS643503A (en) * 1987-06-25 1989-01-09 Fujitsu Ltd Method for measuring thickness of crystal layer
JPH04154699A (ja) * 1990-10-17 1992-05-27 Asahi Chem Ind Co Ltd ３―ｖ族化合物単結晶薄膜の合成方法
JPH08148438A (ja) * 1994-11-24 1996-06-07 Hitachi Cable Ltd 化合物半導体薄膜結晶の気相成長方法及びその装置
FR2769924B1 (fr) * 1997-10-20 2000-03-10 Centre Nat Rech Scient Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche
EP1259978A2 (de) * 2000-03-02 2002-11-27 Aixtron AG VERFAHREN UND VORRICHTUNG ZUR HERSTELLUNG VON GRUPPE-III-N, GRUP PE-III-V-N UND METALL-STICKSTOFF-BAUELEMENTSTRUKTUREN AUF Si-SUBSTRATEN
US6596079B1 (en) 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
TW546850B (en) * 2000-08-18 2003-08-11 Showa Denko Kk Manufacturing method for crystallization of group III nitride semiconductor, manufacturing method for gallium nitride compound semiconductor, gallium nitride compound semiconductor, gallium nitride compound semiconductor light emitting elements and light
US6936357B2 (en) 2001-07-06 2005-08-30 Technologies And Devices International, Inc. Bulk GaN and ALGaN single crystals
US6616757B1 (en) 2001-07-06 2003-09-09 Technologies And Devices International, Inc. Method for achieving low defect density GaN single crystal boules
US20030205193A1 (en) 2001-07-06 2003-11-06 Melnik Yuri V. Method for achieving low defect density aigan single crystal boules
EP1471168B2 (de) * 2003-04-24 2011-08-10 Norstel AB Vorrichtung und Verfahren zur Herstellung von Einkristallen durch Dampfphasenabscheidung
JP4513326B2 (ja) * 2004-01-14 2010-07-28 日立電線株式会社 窒化物半導体結晶の製造方法及び窒化物半導体基板の製造方法
JP3888374B2 (ja) * 2004-03-17 2007-02-28 住友電気工業株式会社 ＧａＮ単結晶基板の製造方法

Also Published As

Publication number Publication date
US8048224B2 (en) 2011-11-01
JP5656401B2 (ja) 2015-01-21
EP2016209B1 (de) 2011-01-12
CN102358955B (zh) 2014-06-25
CN102358955A (zh) 2012-02-22
WO2007128522A3 (en) 2008-01-10
JP2009536139A (ja) 2009-10-08
WO2007128522A2 (en) 2007-11-15
CN101443488A (zh) 2009-05-27
US20070257334A1 (en) 2007-11-08
EP2016209A2 (de) 2009-01-21
PL2016209T3 (pl) 2011-06-30
CN101443488B (zh) 2013-03-27

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