JPS643503A - Method for measuring thickness of crystal layer - Google Patents

Method for measuring thickness of crystal layer

Info

Publication number
JPS643503A
JPS643503A JP15897587A JP15897587A JPS643503A JP S643503 A JPS643503 A JP S643503A JP 15897587 A JP15897587 A JP 15897587A JP 15897587 A JP15897587 A JP 15897587A JP S643503 A JPS643503 A JP S643503A
Authority
JP
Japan
Prior art keywords
substrate
light
transmittable
crystal layer
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15897587A
Other languages
Japanese (ja)
Inventor
Kenji Maruyama
Soichiro Hikita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15897587A priority Critical patent/JPS643503A/en
Publication of JPS643503A publication Critical patent/JPS643503A/en
Pending legal-status Critical Current

Links

Landscapes

  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To detect the thickness of an epitaxial layer on a substrate with good accuracy by projecting one set of the light consisting of the 1st light which is not transmittable through the substrate and the 2nd light which is transmittable through the substrate but is not transmittable through the crystal layer to the substrate from the bottom thereof and measuring the reflected light thereof by means of separate photodetectors. CONSTITUTION:The laser light 14 which is not transmittable through the substrate 11 is projected by a light source 13 consisting of a semiconductor laser element to the substrate 11 from the bottom thereof and the light reflected from the base is detected by the photodetector 15 in the case of measuring the thickness of the epitaxial crystal layer 12 formed on the substrate 11. The light source 13 is then exchanged with another light source 17 consisting of a semiconductor laser element and the laser light 18 which is transmittable through the substrate 11 but is not transmittable through the epitaxial layer 12 is projected to the substrate. The light reflected from a boundary face 19 is detected by the photodetector 20. Calculations are made by a triangulation method based on the position of the light source 13 (17) and the positions of the detectors 15, 20, by which the thickness of the epitaxial layer 12 is easily measured.
JP15897587A 1987-06-25 1987-06-25 Method for measuring thickness of crystal layer Pending JPS643503A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15897587A JPS643503A (en) 1987-06-25 1987-06-25 Method for measuring thickness of crystal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15897587A JPS643503A (en) 1987-06-25 1987-06-25 Method for measuring thickness of crystal layer

Publications (1)

Publication Number Publication Date
JPS643503A true JPS643503A (en) 1989-01-09

Family

ID=15683465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15897587A Pending JPS643503A (en) 1987-06-25 1987-06-25 Method for measuring thickness of crystal layer

Country Status (1)

Country Link
JP (1) JPS643503A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03174739A (en) * 1989-09-01 1991-07-29 Nippon Telegr & Teleph Corp <Ntt> Measurement of growth situation of epitaxial growth layer
JPH0758081A (en) * 1993-08-10 1995-03-03 Nec Corp Method and apparatus for measuring dry etching depth
JP2009536139A (en) * 2006-05-08 2009-10-08 フライベルガー・コンパウンド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング III-N Bulk Crystal and Freestanding III-N Substrate Manufacturing Method, and III-N Bulk Crystal and Freestanding III-N Substrate
JP2010028011A (en) * 2008-07-24 2010-02-04 Sumco Corp Method for measuring thickness of epitaxial layer, method for manufacturing epitaxial wafer and method for controlling manufacturing process of epitaxial wafer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4943660A (en) * 1972-05-22 1974-04-24
JPS52104256A (en) * 1976-02-27 1977-09-01 Iwatsu Electric Co Ltd Thickness measuring device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4943660A (en) * 1972-05-22 1974-04-24
JPS52104256A (en) * 1976-02-27 1977-09-01 Iwatsu Electric Co Ltd Thickness measuring device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03174739A (en) * 1989-09-01 1991-07-29 Nippon Telegr & Teleph Corp <Ntt> Measurement of growth situation of epitaxial growth layer
JPH0758081A (en) * 1993-08-10 1995-03-03 Nec Corp Method and apparatus for measuring dry etching depth
JP2009536139A (en) * 2006-05-08 2009-10-08 フライベルガー・コンパウンド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング III-N Bulk Crystal and Freestanding III-N Substrate Manufacturing Method, and III-N Bulk Crystal and Freestanding III-N Substrate
JP2010028011A (en) * 2008-07-24 2010-02-04 Sumco Corp Method for measuring thickness of epitaxial layer, method for manufacturing epitaxial wafer and method for controlling manufacturing process of epitaxial wafer

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