DE602008001998D1 - Verfahren zur Beurteilung eines Halbleitersubstrats - Google Patents

Verfahren zur Beurteilung eines Halbleitersubstrats

Info

Publication number
DE602008001998D1
DE602008001998D1 DE602008001998T DE602008001998T DE602008001998D1 DE 602008001998 D1 DE602008001998 D1 DE 602008001998D1 DE 602008001998 T DE602008001998 T DE 602008001998T DE 602008001998 T DE602008001998 T DE 602008001998T DE 602008001998 D1 DE602008001998 D1 DE 602008001998D1
Authority
DE
Germany
Prior art keywords
evaluating
semiconductor substrate
semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008001998T
Other languages
English (en)
Inventor
Michio Tajima
Hiroki Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Aerospace Exploration Agency JAXA
Original Assignee
Japan Aerospace Exploration Agency JAXA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Aerospace Exploration Agency JAXA filed Critical Japan Aerospace Exploration Agency JAXA
Publication of DE602008001998D1 publication Critical patent/DE602008001998D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6489—Photoluminescence of semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N21/6456—Spatial resolved fluorescence measurements; Imaging
    • G01N2021/646—Detecting fluorescent inhomogeneities at a position, e.g. for detecting defects

Landscapes

  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Led Devices (AREA)
DE602008001998T 2007-02-26 2008-02-26 Verfahren zur Beurteilung eines Halbleitersubstrats Active DE602008001998D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007045411A JP5024865B2 (ja) 2007-02-26 2007-02-26 半導体基板の評価方法

Publications (1)

Publication Number Publication Date
DE602008001998D1 true DE602008001998D1 (de) 2010-09-16

Family

ID=39315366

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008001998T Active DE602008001998D1 (de) 2007-02-26 2008-02-26 Verfahren zur Beurteilung eines Halbleitersubstrats

Country Status (4)

Country Link
US (1) US7947967B2 (de)
EP (1) EP1962339B1 (de)
JP (1) JP5024865B2 (de)
DE (1) DE602008001998D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100178718A1 (en) * 2009-01-13 2010-07-15 Maxim Kelman Methods for improving performance variation of a solar cell manufacturing process
JP5557368B2 (ja) * 2009-04-24 2014-07-23 学校法人東京電機大学 半導体検査装置及び半導体検査方法
WO2011009159A1 (en) * 2009-07-20 2011-01-27 Bt Imaging Pty Ltd Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials
US8330946B2 (en) * 2009-12-15 2012-12-11 Nanometrics Incorporated Silicon filter for photoluminescence metrology
TW201315202A (zh) * 2011-09-30 2013-04-01 Smobio Inc 掃描裝置
JP5904304B2 (ja) * 2013-04-17 2016-04-13 新日鐵住金株式会社 金属の欠陥検出方法
KR102068741B1 (ko) 2013-06-04 2020-01-22 삼성디스플레이 주식회사 다결정 규소막의 검사 방법
US9685906B2 (en) * 2013-07-03 2017-06-20 Semilab SDI LLC Photoluminescence mapping of passivation defects for silicon photovoltaics
DE102013112885A1 (de) * 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Verfahren zur optischen Charakterisierung eines optoelektronischen Halbleitermaterials und Vorrichtung zur Durchführung des Verfahrens
KR101614225B1 (ko) 2014-12-29 2016-04-20 주식회사 엘지실트론 웨이퍼 오염 검출방법
US10018565B2 (en) 2015-05-04 2018-07-10 Semilab Semiconductor Physics Laboratory Co., Ltd. Micro photoluminescence imaging with optical filtering
US10012593B2 (en) 2015-05-04 2018-07-03 Semilab Semiconductor Physics Laboratory Co., Ltd. Micro photoluminescence imaging
US10883941B2 (en) * 2015-05-04 2021-01-05 Semilab Semiconductor Physics Laboratory Co., Ltd. Micro photoluminescence imaging
CN104907952A (zh) * 2015-05-14 2015-09-16 苏州市职业大学 一种可快速更换钳口的虎钳
CN109507559A (zh) * 2017-09-15 2019-03-22 上海新昇半导体科技有限公司 一种硅片少子寿命的测试方法及测试装置
CN110544643B (zh) * 2019-09-11 2022-06-28 东方日升（常州）新能源有限公司 无损伤快速判断金属浆料烧穿深度的方法
JPWO2021117818A1 (de) * 2019-12-11 2021-06-17

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02296136A (ja) * 1989-05-10 1990-12-06 Hikari Gijutsu Kenkyu Kaihatsu Kk 化合物半導体のホトルミネッセンス測定方法
JPH031553A (ja) * 1989-05-30 1991-01-08 Hikari Gijutsu Kenkyu Kaihatsu Kk 半導体の測定方法及び測定装置
JP2946879B2 (ja) * 1991-10-31 1999-09-06 日本電気株式会社 半導体ウェーハのキャリアのライフタイム測定方法
JP3646453B2 (ja) * 1997-02-18 2005-05-11 株式会社デンソー エッチングの終点検出方法
JP2004340652A (ja) * 2003-05-14 2004-12-02 Hitachi Ltd 欠陥検査装置および陽電子線応用装置
JP3917154B2 (ja) * 2004-11-19 2007-05-23 独立行政法人 宇宙航空研究開発機構 半導体試料の欠陥評価方法及び装置
US20070000434A1 (en) 2005-06-30 2007-01-04 Accent Optical Technologies, Inc. Apparatuses and methods for detecting defects in semiconductor workpieces
DE102006049683B3 (de) * 2006-10-13 2008-05-29 Q-Cells Ag Verfahren und Vorrichtung zum Charakterisieren von Wafern bei der Herstellung von Solarzellen

Also Published As

Publication number Publication date
EP1962339A1 (de) 2008-08-27
JP5024865B2 (ja) 2012-09-12
US20080213926A1 (en) 2008-09-04
EP1962339B1 (de) 2010-08-04
JP2008210947A (ja) 2008-09-11
US7947967B2 (en) 2011-05-24

Similar Documents

Publication Publication Date Title
DE602008001998D1 (de) Verfahren zur Beurteilung eines Halbleitersubstrats
AT505197A3 (de) Verfahren zur aktivierung eines photosensibilisators
DE112006003449A5 (de) Verfahren zur Beschichtung eines Bauteils
DE102009044474A8 (de) Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE502007006736D1 (de) Verfahren zur automatischen Modifikation eines Programms
DE112009001523A5 (de) Verfahren zur Erkennung ausgedehnter statischer Objekte
DE602005015060D1 (de) Verfahren zur Abdichtung eines Anschlusses
DE112007000599A5 (de) Verfahren zur Kalibrierung einer Gierratenmessung
DE602007007400D1 (de) Verfahren zur Niveauregulierung
DE602006018537D1 (de) Verfahren zum herstellen einer transportpalette
DE602007012868D1 (de) Verfahren zur erhaltung eines konstanten schleifprozesses
DE102004010312B8 (de) Verfahren zum Einmessen eines Arbeitspunktes
DE502006003630D1 (de) Verfahren zum ermitteln einer inhomogenen fahrbahn
DE602008000073D1 (de) Verfahren zur Kalibrierung eines Gassensors
GB0822842D0 (en) Method for repairing defect on substrate
ATE556480T1 (de) Verfahren zur regelung eines schaltwandlers
DE502007000995D1 (de) Verfahren zur ermittlung einer dotierungsdichte in einer halbleiterprobe
ATE537208T1 (de) Verfahren zum plasmabeschichten eines polypropylenobjekts
AT503190A3 (de) Verfahren zur herstellung einer halbleitervorrichtung
DE102007023605B8 (de) Vorrichtung zum Abschätzen einer Eigenschaft eines urgeformten Bauteils
DE502007005615D1 (de) Verfahren zur herstellung eines piezoaktors
DE502006002555D1 (de) Verfahren zur Zustandserfassung eines Stromabnehmers
DE602007005760D1 (de) Verfahren zur Zustandsbewertung eines Festwalzelements
DE602007000870D1 (de) Verfahren zur Fehlererkennung einer Zustandsmachine
DE602005001710D1 (de) Verfahren zur Vorbereitung eines grossflächigen Substrats