DE1043536B - Verfahren zur Herstellung von photoleitfaehigem Material, bestehend aus einer Mischung von Kadmiumsulfid, -selenid oder -sulfidselenid - Google Patents

Verfahren zur Herstellung von photoleitfaehigem Material, bestehend aus einer Mischung von Kadmiumsulfid, -selenid oder -sulfidselenid

Info

Publication number
DE1043536B
DE1043536B DER17490A DER0017490A DE1043536B DE 1043536 B DE1043536 B DE 1043536B DE R17490 A DER17490 A DE R17490A DE R0017490 A DER0017490 A DE R0017490A DE 1043536 B DE1043536 B DE 1043536B
Authority
DE
Germany
Prior art keywords
selenide
cadmium
powder
cadmium sulfide
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DER17490A
Other languages
German (de)
English (en)
Inventor
Charles John Busanovich
Frederick Hermes Nicoll
Soren Milton Thomsen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US472354A external-priority patent/US2876202A/en
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE1043536B publication Critical patent/DE1043536B/de
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/087—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and being incorporated in an organic bonding material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/864—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Light Receiving Elements (AREA)
DER17490A 1954-09-27 1955-09-26 Verfahren zur Herstellung von photoleitfaehigem Material, bestehend aus einer Mischung von Kadmiumsulfid, -selenid oder -sulfidselenid Pending DE1043536B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US541623XA 1954-09-27 1954-09-27
US472354A US2876202A (en) 1954-12-01 1954-12-01 Photoconducting powders and method of preparation

Publications (1)

Publication Number Publication Date
DE1043536B true DE1043536B (de) 1958-11-13

Family

ID=45868996

Family Applications (1)

Application Number Title Priority Date Filing Date
DER17490A Pending DE1043536B (de) 1954-09-27 1955-09-26 Verfahren zur Herstellung von photoleitfaehigem Material, bestehend aus einer Mischung von Kadmiumsulfid, -selenid oder -sulfidselenid

Country Status (4)

Country Link
JP (1) JPS324768B1 (en, 2012)
BE (1) BE541623A (en, 2012)
DE (1) DE1043536B (en, 2012)
GB (1) GB815365A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4759951A (en) * 1985-09-25 1988-07-26 Sharp Kabushiki Kaisha Heat-treating Cd-containing photoelectric conversion film in the presence of a cadmium halide

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE861295C (de) * 1940-06-08 1952-12-29 Patra Patent Treuhand Verfahren zur Anbringung von photoelektrischen, kleinkristallinen Stoffen zur Herstellung photoelektrisch empfindlicher Widerstaende
DE861450C (de) * 1940-05-17 1953-01-05 Patra Patent Treuhand Photoelektrische Widerstandszelle
DE870300C (de) * 1942-10-11 1953-03-12 Patra Patent Treuhand Verfahren zur Herstellung hochempfindlicher Photowiderstaende
DE874181C (de) * 1940-04-27 1953-04-20 Patra Patent Treuhand Verfahren zur Herstellung einer photoelektrisch wirksamen Verbindung
DE903971C (de) * 1941-01-15 1954-02-11 Telefunken Gmbh Photowiderstaende, beispielsweise zur Fernbilduebertragung mittels Sekundaeremission von Photowiderstaenden und Verfahren zu deren Herstellung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE874181C (de) * 1940-04-27 1953-04-20 Patra Patent Treuhand Verfahren zur Herstellung einer photoelektrisch wirksamen Verbindung
DE861450C (de) * 1940-05-17 1953-01-05 Patra Patent Treuhand Photoelektrische Widerstandszelle
DE861295C (de) * 1940-06-08 1952-12-29 Patra Patent Treuhand Verfahren zur Anbringung von photoelektrischen, kleinkristallinen Stoffen zur Herstellung photoelektrisch empfindlicher Widerstaende
DE903971C (de) * 1941-01-15 1954-02-11 Telefunken Gmbh Photowiderstaende, beispielsweise zur Fernbilduebertragung mittels Sekundaeremission von Photowiderstaenden und Verfahren zu deren Herstellung
DE870300C (de) * 1942-10-11 1953-03-12 Patra Patent Treuhand Verfahren zur Herstellung hochempfindlicher Photowiderstaende

Also Published As

Publication number Publication date
JPS324768B1 (en, 2012) 1957-07-10
BE541623A (fr) 1959-08-28
GB815365A (en) 1959-06-24

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