GB815365A - Improvements relating to photoconductive materials and devices - Google Patents

Improvements relating to photoconductive materials and devices

Info

Publication number
GB815365A
GB815365A GB26240/55A GB2624055A GB815365A GB 815365 A GB815365 A GB 815365A GB 26240/55 A GB26240/55 A GB 26240/55A GB 2624055 A GB2624055 A GB 2624055A GB 815365 A GB815365 A GB 815365A
Authority
GB
United Kingdom
Prior art keywords
firing
mass
fired
minutes
flux
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB26240/55A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US472354A external-priority patent/US2876202A/en
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB815365A publication Critical patent/GB815365A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/087—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and being incorporated in an organic bonding material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H01L29/227—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

A photo-conductive material for use in photoelectric cells (see Group XXXVI) is made by mixing cadmium sulphide, selenide or sulphoselenide with a flux, firing above the melting point of the flux and washing out the crystals from the resulting product, firing the washed crystals to sinter them into a mass, breaking up the mass into powder without grinding and finally firing the powder in a third firing below the sintering temperature at least part of which is carried out under atmospheric pressure in the presence of sulphur. In a specific example 100 grams of cadmium sulphide or selenide or a mixture of the two is mixed with 10 grams of cadmium chloride, 1 gram of ammonium chloride 0.7 ml. of 0.1 mol. copper chloride and 25 ml. water and the mixture dried at 150 DEG C. for 15 hours, broken up and fired at 600 DEG C. for 20 minutes. The fired mass, consisting of CdS crystals impregnated with Cu and Cl is soaked and washed in water to remove most of the CdCl2, then moistened with a solution containing equal parts of 0.1 mol. CdCl2 and 1 mol. NH4Cl and passed through a 325-mesh sieve. It is then fired at 600 DEG C. for 20 minutes and the sintered mass resulting is grated through a 50-mesh sieve, and is fired in the presence of sulphur vapour for 10 minutes at 500 DEG C. and for a further 10 minutes in vacuo. After cooling it is passed through a 325-mesh sieve. Ag or another monovalent iron may replace Cu. In a further embodiment cadmium sulphide is crystallized from a mass comprising 10 per cent by weight of a molten flux containing a halide and the flux leached out. Cu is added and diffused into the CdS in a second firing.
GB26240/55A 1954-09-27 1955-09-13 Improvements relating to photoconductive materials and devices Expired GB815365A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US541623XA 1954-09-27 1954-09-27
US472354A US2876202A (en) 1954-12-01 1954-12-01 Photoconducting powders and method of preparation

Publications (1)

Publication Number Publication Date
GB815365A true GB815365A (en) 1959-06-24

Family

ID=45868996

Family Applications (1)

Application Number Title Priority Date Filing Date
GB26240/55A Expired GB815365A (en) 1954-09-27 1955-09-13 Improvements relating to photoconductive materials and devices

Country Status (4)

Country Link
JP (1) JPS324768B1 (en)
BE (1) BE541623A (en)
DE (1) DE1043536B (en)
GB (1) GB815365A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2183089A (en) * 1985-09-25 1987-05-28 Sharp Kk Process for producing photoelectric conversion film

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE874181C (en) * 1940-04-27 1953-04-20 Patra Patent Treuhand Process for the production of a photoelectrically active compound
DE861450C (en) * 1940-05-17 1953-01-05 Patra Patent Treuhand Photoelectric resistance cell
DE861295C (en) * 1940-06-08 1952-12-29 Patra Patent Treuhand Process for applying photoelectric, small-crystalline materials for the production of photoelectrically sensitive resistors
DE903971C (en) * 1941-01-15 1954-02-11 Telefunken Gmbh Photoresistors, for example for remote image transmission by means of secondary emission from photoresistors and processes for their production
DE870300C (en) * 1942-10-11 1953-03-12 Patra Patent Treuhand Process for the production of highly sensitive photoresistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2183089A (en) * 1985-09-25 1987-05-28 Sharp Kk Process for producing photoelectric conversion film

Also Published As

Publication number Publication date
BE541623A (en) 1959-08-28
JPS324768B1 (en) 1957-07-10
DE1043536B (en) 1958-11-13

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