DE1034772B - Verfahren zum Ziehen von spannungsfreien Einkristallen fast konstanter Aktivatorkonzentration aus einer Halbleiterschmelze - Google Patents
Verfahren zum Ziehen von spannungsfreien Einkristallen fast konstanter Aktivatorkonzentration aus einer HalbleiterschmelzeInfo
- Publication number
- DE1034772B DE1034772B DEG22436A DEG0022436A DE1034772B DE 1034772 B DE1034772 B DE 1034772B DE G22436 A DEG22436 A DE G22436A DE G0022436 A DEG0022436 A DE G0022436A DE 1034772 B DE1034772 B DE 1034772B
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- crucible
- zone
- melting
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims description 97
- 239000004065 semiconductor Substances 0.000 title claims description 91
- 239000012190 activator Substances 0.000 title claims description 37
- 238000000034 method Methods 0.000 title claims description 37
- 230000008569 process Effects 0.000 title description 9
- 239000012535 impurity Substances 0.000 claims description 64
- 238000002844 melting Methods 0.000 claims description 59
- 230000008018 melting Effects 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 55
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 34
- 229910052732 germanium Inorganic materials 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 31
- 230000008021 deposition Effects 0.000 claims description 14
- 230000001965 increasing effect Effects 0.000 claims description 13
- 239000007787 solid Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 30
- 239000000155 melt Substances 0.000 description 23
- 238000010438 heat treatment Methods 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 13
- 229910052787 antimony Inorganic materials 0.000 description 12
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 12
- 238000000926 separation method Methods 0.000 description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 8
- 238000011109 contamination Methods 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000007858 starting material Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000004857 zone melting Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000010309 melting process Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 239000012494 Quartz wool Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002255 vaccination Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US595503A US2904512A (en) | 1956-07-02 | 1956-07-02 | Growth of uniform composition semiconductor crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1034772B true DE1034772B (de) | 1958-07-24 |
Family
ID=24383491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEG22436A Pending DE1034772B (de) | 1956-07-02 | 1957-07-01 | Verfahren zum Ziehen von spannungsfreien Einkristallen fast konstanter Aktivatorkonzentration aus einer Halbleiterschmelze |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2904512A (en, 2012) |
| DE (1) | DE1034772B (en, 2012) |
| FR (1) | FR1180064A (en, 2012) |
| GB (1) | GB839783A (en, 2012) |
| NL (2) | NL98843C (en, 2012) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1188040B (de) * | 1959-01-20 | 1965-03-04 | Intermetall | Vorrichtung zum Ziehen von Halbleitereinkristallen aus einer Schmelze konstanten Volumens |
| DE1194158B (de) * | 1958-10-04 | 1965-06-03 | Telefunken Patent | Verfahren und Vorrichtung zur Herstellung eines Halbleiterkristalls, insbesondere aus Germanium, mit hoher Versetzungsdichte |
| DE1222022B (de) * | 1960-01-18 | 1966-08-04 | Westinghouse Electric Corp | Verfahren zur Herstellung eines dendritischen Kristalls |
| DE3437524A1 (de) * | 1984-10-12 | 1986-04-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen eines mit indium oder wismut dotierten silicium-halbleiterstabes |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2998335A (en) * | 1956-02-04 | 1961-08-29 | Telefunken Gmbh | Method and apparatusfor growing single crystals from molten bodies |
| US2981687A (en) * | 1958-04-03 | 1961-04-25 | British Thomson Houston Co Ltd | Production of mono-crystal semiconductor bodies |
| GB898872A (en) * | 1959-08-14 | 1962-06-14 | Ici Ltd | Improvements in the manufacture of crystalline silicon |
| US3088853A (en) * | 1959-11-17 | 1963-05-07 | Texas Instruments Inc | Method of purifying gallium by recrystallization |
| NL258297A (en, 2012) * | 1959-12-03 | |||
| US3390020A (en) * | 1964-03-17 | 1968-06-25 | Mandelkorn Joseph | Semiconductor material and method of making same |
| US3404966A (en) * | 1964-09-04 | 1968-10-08 | Northeru Electric Company Ltd | Melting a ferrous ion containing ferrimagnetic oxide in a ferric ion crucible |
| DE1519867A1 (de) * | 1965-02-27 | 1970-02-26 | Siemens Ag | Vorrichtung zum Zonenschmelzen im Vakuum |
| FR1473984A (fr) * | 1966-01-10 | 1967-03-24 | Radiotechnique Coprim Rtc | Procédé et dispositif destinés à la fabrication de composés binaires monocristallins |
| US3452549A (en) * | 1966-03-28 | 1969-07-01 | Us Army | Method for producing predetermined crystal structures |
| US3929557A (en) * | 1973-06-11 | 1975-12-30 | Us Air Force | Periodically and alternately accelerating and decelerating rotation rate of a feed crystal |
| DE2338338C3 (de) * | 1973-07-27 | 1979-04-12 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen eines Halbleiterkristallstabes |
| JPS5347765A (en) * | 1976-10-13 | 1978-04-28 | Matsushita Electric Ind Co Ltd | Semiconductor crystal growth method |
| US4045181A (en) * | 1976-12-27 | 1977-08-30 | Monsanto Company | Apparatus for zone refining |
| US4270973A (en) * | 1978-04-27 | 1981-06-02 | Honeywell Inc. | Growth of thallium-doped silicon from a tin-thallium solution |
| US5363796A (en) * | 1991-02-20 | 1994-11-15 | Sumitomo Metal Industries, Ltd. | Apparatus and method of growing single crystal |
| JPH0680495A (ja) * | 1992-06-16 | 1994-03-22 | Sumitomo Metal Ind Ltd | 結晶成長方法 |
| JPH06279170A (ja) * | 1993-03-29 | 1994-10-04 | Sumitomo Sitix Corp | 単結晶の製造方法及びその装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2631356A (en) * | 1953-03-17 | Method of making p-n junctions | ||
| NL88324C (en, 2012) * | 1950-06-15 | |||
| BE510303A (en, 2012) * | 1951-11-16 | |||
| US2747971A (en) * | 1953-07-20 | 1956-05-29 | Westinghouse Electric Corp | Preparation of pure crystalline silicon |
-
0
- NL NL218610D patent/NL218610A/xx unknown
- NL NL98843D patent/NL98843C/xx active
-
1956
- 1956-07-02 US US595503A patent/US2904512A/en not_active Expired - Lifetime
-
1957
- 1957-07-01 DE DEG22436A patent/DE1034772B/de active Pending
- 1957-07-01 GB GB20666/57A patent/GB839783A/en not_active Expired
- 1957-07-02 FR FR1180064D patent/FR1180064A/fr not_active Expired
Non-Patent Citations (1)
| Title |
|---|
| None * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1194158B (de) * | 1958-10-04 | 1965-06-03 | Telefunken Patent | Verfahren und Vorrichtung zur Herstellung eines Halbleiterkristalls, insbesondere aus Germanium, mit hoher Versetzungsdichte |
| DE1188040B (de) * | 1959-01-20 | 1965-03-04 | Intermetall | Vorrichtung zum Ziehen von Halbleitereinkristallen aus einer Schmelze konstanten Volumens |
| DE1222022B (de) * | 1960-01-18 | 1966-08-04 | Westinghouse Electric Corp | Verfahren zur Herstellung eines dendritischen Kristalls |
| DE3437524A1 (de) * | 1984-10-12 | 1986-04-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen eines mit indium oder wismut dotierten silicium-halbleiterstabes |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1180064A (fr) | 1959-06-01 |
| NL98843C (en, 2012) | |
| GB839783A (en) | 1960-06-29 |
| US2904512A (en) | 1959-09-15 |
| NL218610A (en, 2012) |
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