DE10324477A1 - Mikrolithographische Projektionsbelichtungsanlage - Google Patents

Mikrolithographische Projektionsbelichtungsanlage Download PDF

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Publication number
DE10324477A1
DE10324477A1 DE10324477A DE10324477A DE10324477A1 DE 10324477 A1 DE10324477 A1 DE 10324477A1 DE 10324477 A DE10324477 A DE 10324477A DE 10324477 A DE10324477 A DE 10324477A DE 10324477 A1 DE10324477 A1 DE 10324477A1
Authority
DE
Germany
Prior art keywords
projection
lens
exposure system
immersion liquid
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10324477A
Other languages
German (de)
English (en)
Inventor
Aurelian Dodoc
Wilhelm Ulrich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to DE10324477A priority Critical patent/DE10324477A1/de
Priority to PCT/EP2004/005816 priority patent/WO2004107048A2/de
Priority to KR1020057022510A priority patent/KR101050287B1/ko
Priority to JP2006529950A priority patent/JP4602336B2/ja
Priority to US10/917,371 priority patent/US7532306B2/en
Publication of DE10324477A1 publication Critical patent/DE10324477A1/de
Priority to US11/285,283 priority patent/US7570343B2/en
Priority to US12/199,998 priority patent/US20080316452A1/en
Priority to US12/611,999 priority patent/US20100045952A1/en
Priority to US14/852,824 priority patent/US20160131980A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/7015Details of optical elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70241Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975Assembly, maintenance, transport or storage of apparatus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
DE10324477A 2003-05-30 2003-05-30 Mikrolithographische Projektionsbelichtungsanlage Withdrawn DE10324477A1 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE10324477A DE10324477A1 (de) 2003-05-30 2003-05-30 Mikrolithographische Projektionsbelichtungsanlage
PCT/EP2004/005816 WO2004107048A2 (de) 2003-05-30 2004-05-28 Mikrolithographische projektionsbelichtungsanlage
KR1020057022510A KR101050287B1 (ko) 2003-05-30 2004-05-28 마이크로리소그래픽 투사 노출 장치
JP2006529950A JP4602336B2 (ja) 2003-05-30 2004-05-28 マイクロリソグラフィ用投影露光システム
US10/917,371 US7532306B2 (en) 2003-05-30 2004-08-13 Microlithographic projection exposure apparatus
US11/285,283 US7570343B2 (en) 2003-05-30 2005-11-23 Microlithographic projection exposure apparatus
US12/199,998 US20080316452A1 (en) 2003-05-30 2008-08-28 Microlithographic projection exposure apparatus
US12/611,999 US20100045952A1 (en) 2003-05-30 2009-11-04 Microlithographic projection exposure apparatus
US14/852,824 US20160131980A1 (en) 2003-05-30 2015-09-14 Microlithographic projection exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10324477A DE10324477A1 (de) 2003-05-30 2003-05-30 Mikrolithographische Projektionsbelichtungsanlage

Publications (1)

Publication Number Publication Date
DE10324477A1 true DE10324477A1 (de) 2004-12-30

Family

ID=33482288

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10324477A Withdrawn DE10324477A1 (de) 2003-05-30 2003-05-30 Mikrolithographische Projektionsbelichtungsanlage

Country Status (5)

Country Link
US (5) US7532306B2 (https=)
JP (1) JP4602336B2 (https=)
KR (1) KR101050287B1 (https=)
DE (1) DE10324477A1 (https=)
WO (1) WO2004107048A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005024163A1 (de) * 2005-05-23 2006-11-30 Carl Zeiss Smt Ag Optisches System einer mikrolithographischen Projektionsbelichtungsanlage

Families Citing this family (112)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005536775A (ja) 2002-08-23 2005-12-02 株式会社ニコン 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法
KR100585476B1 (ko) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
US7372541B2 (en) * 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1571700A4 (en) 2002-12-10 2007-09-12 Nikon Corp OPTICAL DEVICE AND PROJECTION EXPOSURE DEVICE USING THE OPTICAL DEVICE
KR101181688B1 (ko) 2003-03-25 2012-09-19 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR20170018113A (ko) 2003-04-09 2017-02-15 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
WO2004090634A2 (en) 2003-04-10 2004-10-21 Nikon Corporation Environmental system including vaccum scavange for an immersion lithography apparatus
KR101177330B1 (ko) 2003-04-10 2012-08-30 가부시키가이샤 니콘 액침 리소그래피 장치
WO2004092830A2 (en) * 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
SG10201405231YA (en) 2003-05-06 2014-09-26 Nippon Kogaku Kk Projection optical system, exposure apparatus, and exposure method
US7348575B2 (en) 2003-05-06 2008-03-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
CN100541717C (zh) * 2003-05-28 2009-09-16 株式会社尼康 曝光方法、曝光装置以及器件制造方法
DE10324477A1 (de) * 2003-05-30 2004-12-30 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage
WO2005006416A1 (ja) 2003-07-09 2005-01-20 Nikon Corporation 結合装置、露光装置、及びデバイス製造方法
WO2005015315A2 (de) * 2003-07-24 2005-02-17 Carl Zeiss Smt Ag Mikrolithographische projektionsbelichtungsanlage sowie verfahren zum einbringen einer immersionsflüssigkeit in einem immersionsraum
US8149381B2 (en) 2003-08-26 2012-04-03 Nikon Corporation Optical element and exposure apparatus
EP2278402B1 (en) 2003-08-26 2013-03-06 Nikon Corporation Exposure apparatus
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
KR101162527B1 (ko) * 2003-09-03 2012-07-09 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
CN1860585B (zh) * 2003-09-29 2010-04-28 株式会社尼康 液浸型透镜系统和投影曝光装置
TW201834020A (zh) 2003-10-28 2018-09-16 日商尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
TW201809801A (zh) 2003-11-20 2018-03-16 日商尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法
JP2007516613A (ja) 2003-12-15 2007-06-21 カール・ツアイス・エスエムテイ・アーゲー 少なくとも1つの液体レンズを備えるマイクロリソグラフィー投影対物レンズとしての対物レンズ
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
CN1938646B (zh) 2004-01-20 2010-12-15 卡尔蔡司Smt股份公司 曝光装置和用于投影透镜的测量装置
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WO2005081067A1 (en) * 2004-02-13 2005-09-01 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
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US20060244938A1 (en) * 2004-05-04 2006-11-02 Karl-Heinz Schuster Microlitographic projection exposure apparatus and immersion liquid therefore
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN1954408B (zh) 2004-06-04 2012-07-04 尼康股份有限公司 曝光装置、曝光方法及元件制造方法
US20070103661A1 (en) * 2004-06-04 2007-05-10 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR20070026603A (ko) * 2004-06-10 2007-03-08 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스 제조 방법
US20070222959A1 (en) * 2004-06-10 2007-09-27 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7180572B2 (en) * 2004-06-23 2007-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion optical projection system
US7738193B2 (en) 2004-06-29 2010-06-15 Carl Zeiss Smt Ag Positioning unit and alignment device for an optical element
US20060001851A1 (en) * 2004-07-01 2006-01-05 Grant Robert B Immersion photolithography system
EP1801852A4 (en) * 2004-07-16 2008-04-09 Nikon Corp CARRIER METHOD AND SUPPORT STRUCTURE FOR OPTICAL ELEMENTS, OPTICAL DEVICE, EXPOSURE DEVICE AND DEVICE MANUFACTURING METHOD
US7209213B2 (en) * 2004-10-07 2007-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20070095275A (ko) * 2004-10-22 2007-09-28 칼 짜이스 에스엠테 아게 마이크로리소그래피를 위한 투영 노출 장치
US20070242248A1 (en) * 2004-10-26 2007-10-18 Nikon Corporation Substrate processing method, exposure apparatus, and method for producing device
TWI436403B (zh) * 2004-10-26 2014-05-01 尼康股份有限公司 A cleaning method, a substrate processing method, an exposure apparatus, and an element manufacturing method
KR20070083492A (ko) * 2004-12-02 2007-08-24 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US20080106718A1 (en) * 2004-12-02 2008-05-08 Nikon Corporation Exposure Apparatus and Device Manufacturing Method
US7196770B2 (en) * 2004-12-07 2007-03-27 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
US7397533B2 (en) 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7405805B2 (en) 2004-12-28 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060147821A1 (en) 2004-12-30 2006-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG124351A1 (en) 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7710653B2 (en) 2005-01-28 2010-05-04 Nikon Corporation Projection optical system, exposure system, and exposure method
SG158922A1 (en) * 2005-01-28 2010-02-26 Nikon Corp Projection optical system, exposure system, and exposure method
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060232753A1 (en) * 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2660854B1 (en) 2005-05-12 2017-06-21 Nikon Corporation Projection optical system, exposure apparatus and exposure method
DE102005027099A1 (de) * 2005-06-10 2006-12-14 Carl Zeiss Smt Ag Immersionslithographieobjektiv
WO2006133800A1 (en) 2005-06-14 2006-12-21 Carl Zeiss Smt Ag Lithography projection objective, and a method for correcting image defects of the same
US7652746B2 (en) * 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20080018158A (ko) 2005-06-21 2008-02-27 가부시키가이샤 니콘 노광 장치 및 노광 방법, 메인터넌스 방법과 디바이스 제조방법
US7751027B2 (en) 2005-06-21 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4799060B2 (ja) * 2005-06-27 2011-10-19 株式会社東芝 液浸露光方法及び液浸露光装置
US7468779B2 (en) * 2005-06-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4752374B2 (ja) * 2005-07-27 2011-08-17 株式会社ニコン 露光装置、液体保持方法、及びデバイス製造方法
US7535644B2 (en) * 2005-08-12 2009-05-19 Asml Netherlands B.V. Lens element, lithographic apparatus, device manufacturing method, and device manufactured thereby
JP5243957B2 (ja) * 2005-08-16 2013-07-24 カール・ツァイス・エスエムティー・ゲーエムベーハー 液浸リソグラフィー用オブジェクティブ
JP4923480B2 (ja) * 2005-08-23 2012-04-25 株式会社ニコン 露光装置及びデバイス製造方法、計測部材
WO2007031182A1 (de) * 2005-09-13 2007-03-22 Carl Zeiss Smt Ag Mikrolithographische projektionsbelichtungsanlage und verfahren zur einstellung einer optischen abbildungseigenschaft derselben
JP4706422B2 (ja) * 2005-09-30 2011-06-22 株式会社ニコン 露光装置及びデバイス製造方法
EP1950795A4 (en) * 2005-11-01 2010-06-02 Nikon Corp EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD
US20070127135A1 (en) * 2005-11-01 2007-06-07 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
US7804577B2 (en) 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
US7864292B2 (en) 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102005057909A1 (de) * 2005-12-02 2007-06-06 Carl Zeiss Smt Ag Optisches Element mit doppelbrechender Beschichtung
EP1963901A2 (en) * 2005-12-22 2008-09-03 Corning Incorporated Submersive doublet for high numerical aperture optical system
US20070195307A1 (en) * 2005-12-27 2007-08-23 Carl Zeiss Smt Ag. Projection lens and method for performing microlithography
DE102006021797A1 (de) * 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
US7532309B2 (en) * 2006-06-06 2009-05-12 Nikon Corporation Immersion lithography system and method having an immersion fluid containment plate for submerging the substrate to be imaged in immersion fluid
US7656502B2 (en) * 2006-06-22 2010-02-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101235492B1 (ko) 2006-07-03 2013-02-20 칼 짜이스 에스엠테 게엠베하 리소그래피 투사 대물렌즈 교정/수리 방법
US7724347B2 (en) * 2006-09-05 2010-05-25 Tunable Optix Corporation Tunable liquid crystal lens module
JP2008218653A (ja) * 2007-03-02 2008-09-18 Canon Inc 露光装置及びデバイス製造方法
US7900641B2 (en) * 2007-05-04 2011-03-08 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US8947629B2 (en) * 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US7866330B2 (en) * 2007-05-04 2011-01-11 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
JP2009049192A (ja) * 2007-08-20 2009-03-05 Canon Inc レンズの交換方法および代替レンズの製造方法
US8681308B2 (en) * 2007-09-13 2014-03-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
WO2009043790A2 (en) * 2007-10-02 2009-04-09 Carl Zeiss Smt Ag Projection objective for microlithography
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
CN101681123B (zh) 2007-10-16 2013-06-12 株式会社尼康 照明光学系统、曝光装置以及元件制造方法
SG185313A1 (en) 2007-10-16 2012-11-29 Nikon Corp Illumination optical system, exposure apparatus, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
NL1036186A1 (nl) * 2007-12-03 2009-06-04 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
NL1036579A1 (nl) * 2008-02-19 2009-08-20 Asml Netherlands Bv Lithographic apparatus and methods.
NL1036596A1 (nl) * 2008-02-21 2009-08-24 Asml Holding Nv Re-flow and buffer system for immersion lithography.
EP2282188B1 (en) 2008-05-28 2015-03-11 Nikon Corporation Illumination optical system and exposure apparatus
JP2009289896A (ja) * 2008-05-28 2009-12-10 Toshiba Corp 液浸露光方法
US8294904B2 (en) * 2008-05-29 2012-10-23 Corning Incorporated Fizeau lens having aspheric compensation
KR101065417B1 (ko) * 2009-05-20 2011-09-16 삼성모바일디스플레이주식회사 광 조사 장치 및 이를 이용한 유기 전계 발광 표시장치의 제조 방법
NL2005207A (en) * 2009-09-28 2011-03-29 Asml Netherlands Bv Heat pipe, lithographic apparatus and device manufacturing method.
US8896810B2 (en) * 2009-12-29 2014-11-25 Globalfoundries Singapore Pte. Ltd. Liquid immersion scanning exposure system using an immersion liquid confined within a lens hood
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
US9127915B1 (en) * 2011-11-08 2015-09-08 Novana, Inc. Self-healing composites
US20140211175A1 (en) * 2013-01-31 2014-07-31 Globalfoundries Inc. Enhancing resolution in lithographic processes using high refractive index fluids
CN105793758A (zh) * 2013-12-06 2016-07-20 3M创新有限公司 具有保护元件的半潜式显微镜物镜和物镜在多光子成像方法中的用途
US10049444B2 (en) 2016-03-25 2018-08-14 Lockheed Martin Corporation Optical device for fuel filter debris
DE102018221670A1 (de) 2018-12-13 2020-06-18 Karlsruher Institut für Technologie Vorrichtung und Verfahren zur optischen Charakterisierung oder Bearbeitung eines Objekts
CN109407474A (zh) * 2018-12-26 2019-03-01 长春长光智欧科技有限公司 一种带保护玻璃的浸没头
DE102019112224A1 (de) * 2019-05-10 2020-11-12 Carl Zeiss Smt Gmbh Abstützung eines optischen Elements

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10228661A (ja) * 1997-02-14 1998-08-25 Sony Corp 光学記録媒体の原盤作製用露光装置
JPH10303114A (ja) * 1997-04-23 1998-11-13 Nikon Corp 液浸型露光装置
DE19929403A1 (de) * 1999-06-26 2000-12-28 Zeiss Carl Fa Objektiv, insbesondere Objektiv für eine Halbleiter-Lithographie-Projektionsbelichtungsanlage und Herstellungverfahren
DE10121346A1 (de) * 2001-05-02 2002-11-07 Zeiss Carl Objektiv, insbesondere Projektionsobjektiv für die Halbleiter-Lithographie
DE10133841A1 (de) * 2001-07-18 2003-02-06 Zeiss Carl Objektiv mit Kristall-Linsen

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4269125A (en) * 1979-07-27 1981-05-26 Combustion Engineering, Inc. Pulverizer rejects disposal
ATE1462T1 (de) 1979-07-27 1982-08-15 Werner W. Dr. Tabarelli Optisches lithographieverfahren und einrichtung zum kopieren eines musters auf eine halbleiterscheibe.
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
DD221563A1 (de) * 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) * 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
US5724185A (en) * 1995-08-17 1998-03-03 Hughes Danbury Optical Systems, Inc. Method for optically contacting surfaces stressed by an optical coating
US6563565B2 (en) * 1997-08-27 2003-05-13 Nikon Corporation Apparatus and method for projection exposure
US6235438B1 (en) * 1997-10-07 2001-05-22 Nikon Corporation Projection exposure method and apparatus
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP4504479B2 (ja) * 1999-09-21 2010-07-14 オリンパス株式会社 顕微鏡用液浸対物レンズ
JP2001272604A (ja) * 2000-03-27 2001-10-05 Olympus Optical Co Ltd 液浸対物レンズおよびそれを用いた光学装置
US6466365B1 (en) * 2000-04-07 2002-10-15 Corning Incorporated Film coated optical lithography elements and method of making
DE10119861A1 (de) * 2000-05-04 2001-11-08 Zeiss Carl Projektionsobjektiv, insbesondere für die Mikrolithographie
JP2002083766A (ja) * 2000-06-19 2002-03-22 Nikon Corp 投影光学系、該光学系の製造方法、及び前記光学系を備えた投影露光装置
AUPQ922000A0 (en) * 2000-08-04 2000-08-31 Bae Systems Australia Limited Method of constructing an optical parametric oscillator
DE10123725A1 (de) * 2001-05-15 2002-11-21 Zeiss Carl Projektionsbelichtungsanlage der Mikrolithographie, Optisches System und Herstellverfahren
KR20040015251A (ko) * 2001-05-15 2004-02-18 칼 짜이스 에스엠티 아게 불화물 결정 렌즈들을 포함하는 렌즈 시스템
US6479999B1 (en) * 2001-06-05 2002-11-12 Koninklijke Philips Electronics N.V. Efficiently shielded MRI gradient coil with discretely or continuously variable field of view
US6775063B2 (en) * 2001-07-10 2004-08-10 Nikon Corporation Optical system and exposure apparatus having the optical system
JP2005536775A (ja) 2002-08-23 2005-12-02 株式会社ニコン 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法
KR100585476B1 (ko) * 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
EP1420302A1 (en) * 2002-11-18 2004-05-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
SG131766A1 (en) * 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10258718A1 (de) * 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
DE10258715B4 (de) * 2002-12-10 2006-12-21 Carl Zeiss Smt Ag Verfahren zur Herstellung eines optischen Abbildungssystems
EP1571700A4 (en) * 2002-12-10 2007-09-12 Nikon Corp OPTICAL DEVICE AND PROJECTION EXPOSURE DEVICE USING THE OPTICAL DEVICE
US6781670B2 (en) * 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
US6943941B2 (en) * 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
DE10324477A1 (de) * 2003-05-30 2004-12-30 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage
KR101407204B1 (ko) 2004-01-14 2014-06-13 칼 짜이스 에스엠티 게엠베하 투영 대물렌즈
WO2005081067A1 (en) * 2004-02-13 2005-09-01 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
TWI395069B (zh) 2004-02-18 2013-05-01 尼康股份有限公司 投影光學系統、曝光裝置以及曝光方法
US20060244938A1 (en) * 2004-05-04 2006-11-02 Karl-Heinz Schuster Microlitographic projection exposure apparatus and immersion liquid therefore
EP1774405B1 (en) 2004-06-04 2014-08-06 Carl Zeiss SMT GmbH System for measuring the image quality of an optical imaging system
US20060237227A1 (en) * 2005-04-26 2006-10-26 Shiyou Zhao Circuit board via structure for high speed signaling
DE102005024163A1 (de) * 2005-05-23 2006-11-30 Carl Zeiss Smt Ag Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
US20070070323A1 (en) * 2005-09-21 2007-03-29 Nikon Corporation Exposure apparatus, exposure method, and device fabricating method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10228661A (ja) * 1997-02-14 1998-08-25 Sony Corp 光学記録媒体の原盤作製用露光装置
JPH10303114A (ja) * 1997-04-23 1998-11-13 Nikon Corp 液浸型露光装置
DE19929403A1 (de) * 1999-06-26 2000-12-28 Zeiss Carl Fa Objektiv, insbesondere Objektiv für eine Halbleiter-Lithographie-Projektionsbelichtungsanlage und Herstellungverfahren
DE10121346A1 (de) * 2001-05-02 2002-11-07 Zeiss Carl Objektiv, insbesondere Projektionsobjektiv für die Halbleiter-Lithographie
DE10133841A1 (de) * 2001-07-18 2003-02-06 Zeiss Carl Objektiv mit Kristall-Linsen

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005024163A1 (de) * 2005-05-23 2006-11-30 Carl Zeiss Smt Ag Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
US8212991B2 (en) 2005-05-23 2012-07-03 Carl Zeiss Smt Gmbh Optical system of a microlithographic projection exposure apparatus

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