DE102017012567B4 - Lichtemittierende Vorrichtung - Google Patents

Lichtemittierende Vorrichtung

Info

Publication number
DE102017012567B4
DE102017012567B4 DE102017012567.8A DE102017012567A DE102017012567B4 DE 102017012567 B4 DE102017012567 B4 DE 102017012567B4 DE 102017012567 A DE102017012567 A DE 102017012567A DE 102017012567 B4 DE102017012567 B4 DE 102017012567B4
Authority
DE
Germany
Prior art keywords
light
emitting device
current
emitting
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102017012567.8A
Other languages
German (de)
English (en)
Inventor
Tzu-Chieh Hsu
Yi-Wen Huan
Yi-Hung Lin
Chih-Chiang Lu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ENNOSTAR CORPORATION, TW
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Application granted granted Critical
Publication of DE102017012567B4 publication Critical patent/DE102017012567B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2213—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on polyimide or resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H01S5/2216—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H01S5/0283—Optically inactive coating on the facet, e.g. half-wave coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0286—Coatings with a reflectivity that is not constant over the facets, e.g. apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/1835—Non-circular mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Electroluminescent Light Sources (AREA)
DE102017012567.8A 2016-03-07 2017-01-30 Lichtemittierende Vorrichtung Active DE102017012567B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/062,995 2016-03-07
US15/062,995 US9837792B2 (en) 2016-03-07 2016-03-07 Light-emitting device

Publications (1)

Publication Number Publication Date
DE102017012567B4 true DE102017012567B4 (de) 2026-01-29

Family

ID=59650704

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102017012567.8A Active DE102017012567B4 (de) 2016-03-07 2017-01-30 Lichtemittierende Vorrichtung
DE102017101731.3A Ceased DE102017101731A1 (de) 2016-03-07 2017-01-30 Lichtemittierende Vorrichtung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE102017101731.3A Ceased DE102017101731A1 (de) 2016-03-07 2017-01-30 Lichtemittierende Vorrichtung

Country Status (6)

Country Link
US (3) US9837792B2 (https=)
JP (3) JP7068772B2 (https=)
KR (1) KR102336974B1 (https=)
CN (2) CN107171180A (https=)
DE (2) DE102017012567B4 (https=)
TW (4) TWI847513B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11381060B2 (en) 2017-04-04 2022-07-05 Apple Inc. VCSELs with improved optical and electrical confinement
CN111869022B (zh) * 2018-03-19 2024-03-15 株式会社理光 表面发射激光器阵列，检测设备和激光器设备
EP3888138A1 (en) 2019-02-21 2021-10-06 Apple Inc. Indium-phosphide vcsel with dielectric dbr
CN113711450B (zh) * 2019-04-01 2025-02-18 苹果公司 具有紧密节距和高效率的vcsel阵列
US20200365767A1 (en) * 2019-05-17 2020-11-19 Shin-Etsu Opto Electronic Co., Ltd. Light-emitting diode structure and method for forming the same
US11374381B1 (en) 2019-06-10 2022-06-28 Apple Inc. Integrated laser module
JP7056628B2 (ja) * 2019-06-28 2022-04-19 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7623563B2 (ja) * 2020-07-27 2025-01-29 日亜化学工業株式会社 垂直共振器面発光レーザ素子
CN113410349B (zh) * 2021-04-30 2022-05-13 华灿光电(苏州）有限公司 具有双层布拉格反射镜的发光二极管芯片及其制备方法
CN113488568B (zh) * 2021-05-12 2022-06-14 华灿光电（浙江）有限公司 倒装发光二极管芯片及其制备方法
TWI859532B (zh) * 2022-04-26 2024-10-21 晶元光電股份有限公司 半導體元件
US12494618B2 (en) 2022-09-14 2025-12-09 Apple Inc. Vertical emitters with integrated final-stage transistor switch
CN116565093A (zh) * 2023-07-11 2023-08-08 江西兆驰半导体有限公司 一种led芯片制备方法及led芯片

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1146036A (ja) * 1997-07-25 1999-02-16 Seiko Epson Corp 面発光型半導体レーザおよびその製造方法
JPH1168225A (ja) * 1997-08-18 1999-03-09 Fuji Xerox Co Ltd 面発光型半導体レーザ
US6144682A (en) * 1998-10-29 2000-11-07 Xerox Corporation Spatial absorptive and phase shift filter layer to reduce modal reflectivity for higher order modes in a vertical cavity surface emitting laser
US20030231683A1 (en) * 2002-05-30 2003-12-18 Xerox Corporation Nitride based semiconductor structures with highly reflective mirrors
US20080080583A1 (en) * 2006-09-28 2008-04-03 Fuji Xerox Co., Ltd. Surface-emitting semiconductor array device, module, light source device, data processing apparatus, light transmitting device, light spatial transmitting apparatus, and light spatial transmitting system
US20110228803A1 (en) * 2010-03-19 2011-09-22 Finisar Corporation Vcsel with integral resistive region
US20130163626A1 (en) * 2011-12-24 2013-06-27 Princeton Optronics Optical Illuminator
WO2014087301A1 (en) * 2012-12-05 2014-06-12 Koninklijke Philips N.V. Illumination array with adapted distribution of radiation
WO2015011983A1 (ja) * 2013-07-22 2015-01-29 株式会社村田製作所 垂直共振面発光レーザアレイ
US20150071320A1 (en) * 2012-03-14 2015-03-12 Koninklijke Philips N.V. Vcsel module and manufacture thereof

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3835415A (en) * 1972-06-28 1974-09-10 Ibm High radiance semiconductor laser
US5008889A (en) * 1989-11-06 1991-04-16 Wilson Keith E High-accuracy wavelength stabilization of angled-stripe super luminescent laser diode sources
JPH11121864A (ja) * 1997-10-08 1999-04-30 Seiko Epson Corp 面発光レーザ及びその製造方法
JP4114236B2 (ja) 1998-07-08 2008-07-09 沖電気工業株式会社 半導体発光装置
JP2000277852A (ja) 1999-03-24 2000-10-06 Fuji Xerox Co Ltd 表面発光型半導体レーザ、及びその製造方法
JP2000299492A (ja) 1999-04-15 2000-10-24 Daido Steel Co Ltd 量子井戸型発光ダイオード
JP3837969B2 (ja) * 1999-07-06 2006-10-25 富士ゼロックス株式会社 面発光型半導体レーザとその製造方法
JP3547344B2 (ja) * 1999-08-24 2004-07-28 シャープ株式会社 半導体発光素子
JP2001223384A (ja) * 2000-02-08 2001-08-17 Toshiba Corp 半導体発光素子
JP2002270960A (ja) 2001-03-06 2002-09-20 Toshiba Corp 垂直共振器型発光ダイオード及びその発光ダイオードを用いた光モジュール
JP2002289976A (ja) * 2001-03-23 2002-10-04 Ricoh Co Ltd 半導体構造およびその製造方法および半導体レーザ素子および半導体レーザアレイおよび光インターコネクションシステムおよび光ｌａｎシステム
US6608849B2 (en) 2001-06-13 2003-08-19 Wisconsin Alumni Research Foundation Vertical-cavity surface-emitting semiconductor laser arrays
TWI278995B (en) * 2002-01-28 2007-04-11 Nichia Corp Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element
JP4366522B2 (ja) * 2002-11-29 2009-11-18 信越半導体株式会社 発光素子
JP2004193330A (ja) * 2002-12-11 2004-07-08 Sharp Corp モノリシック多波長レーザ素子とその製法
JP2004288674A (ja) * 2003-03-19 2004-10-14 Fuji Xerox Co Ltd 面発光型半導体レーザおよびそれを用いた光通信システム
TW200505120A (en) * 2003-07-29 2005-02-01 Copax Photonics Corp Single transverse mode vertical cavity surface emitting laser device with array structure and method for fabricating the same
KR20050019485A (ko) * 2003-08-19 2005-03-03 삼성전자주식회사 광검출소자가 일체적으로 형성되는 수직 면발광 레이저
JP4138629B2 (ja) * 2003-11-06 2008-08-27 株式会社東芝 面発光型半導体素子及びその製造方法
DE102004004781A1 (de) * 2004-01-30 2005-08-18 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
US7889774B2 (en) * 2004-03-05 2011-02-15 The Trustees Of Princeton University Organic polariton laser
JP4899344B2 (ja) 2004-06-29 2012-03-21 富士ゼロックス株式会社 表面発光型半導体レーザおよびその製造方法
EP1703603B1 (en) * 2005-03-17 2015-03-18 Fujitsu Limited Tunable laser
JP2007294732A (ja) * 2006-04-26 2007-11-08 Matsushita Electric Ind Co Ltd 半導体レーザ装置及びその製造方法
JP2008028120A (ja) * 2006-07-20 2008-02-07 Sumitomo Electric Ind Ltd 面発光型半導体素子
JP2008172002A (ja) * 2007-01-11 2008-07-24 Fuji Xerox Co Ltd 光送信モジュール
JP4878322B2 (ja) * 2007-03-29 2012-02-15 古河電気工業株式会社 面発光レーザ素子および面発光レーザ素子の製造方法
JP2009065086A (ja) 2007-09-10 2009-03-26 Seiko Epson Corp 面発光型半導体レーザ、面発光型半導体レーザアレイ、および、レーザプリンタ
DE102008012859B4 (de) * 2007-12-21 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Filterstruktur
JP2009246291A (ja) * 2008-03-31 2009-10-22 Furukawa Electric Co Ltd:The 面発光レーザアレイ素子
KR101438818B1 (ko) * 2008-04-01 2014-09-05 엘지이노텍 주식회사 발광다이오드 소자
JP2010219287A (ja) * 2009-03-17 2010-09-30 Sony Corp 半導体発光素子およびその製造方法
JP5475398B2 (ja) * 2009-05-15 2014-04-16 日本オクラロ株式会社 半導体発光素子
JP2011165869A (ja) * 2010-02-09 2011-08-25 Mitsubishi Electric Corp 半導体発光素子及びその製造方法
KR20120131983A (ko) * 2011-05-27 2012-12-05 삼성전자주식회사 전류제한층을 구비한 반도체 발광 소자
JP6303255B2 (ja) * 2011-12-02 2018-04-04 株式会社リコー 面発光レーザ素子及び原子発振器
JP2013171892A (ja) 2012-02-20 2013-09-02 Ricoh Co Ltd 光学センサ及び画像形成装置
JP2015103727A (ja) * 2013-11-27 2015-06-04 株式会社村田製作所 垂直共振器型面発光レーザの製造方法
US20150255954A1 (en) * 2014-03-05 2015-09-10 The Board Of Trustees Of The University Of Illinois Method And Device For Producing Laser Emission

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1146036A (ja) * 1997-07-25 1999-02-16 Seiko Epson Corp 面発光型半導体レーザおよびその製造方法
JPH1168225A (ja) * 1997-08-18 1999-03-09 Fuji Xerox Co Ltd 面発光型半導体レーザ
US6144682A (en) * 1998-10-29 2000-11-07 Xerox Corporation Spatial absorptive and phase shift filter layer to reduce modal reflectivity for higher order modes in a vertical cavity surface emitting laser
US20030231683A1 (en) * 2002-05-30 2003-12-18 Xerox Corporation Nitride based semiconductor structures with highly reflective mirrors
US20080080583A1 (en) * 2006-09-28 2008-04-03 Fuji Xerox Co., Ltd. Surface-emitting semiconductor array device, module, light source device, data processing apparatus, light transmitting device, light spatial transmitting apparatus, and light spatial transmitting system
US20110228803A1 (en) * 2010-03-19 2011-09-22 Finisar Corporation Vcsel with integral resistive region
US20130163626A1 (en) * 2011-12-24 2013-06-27 Princeton Optronics Optical Illuminator
US20150071320A1 (en) * 2012-03-14 2015-03-12 Koninklijke Philips N.V. Vcsel module and manufacture thereof
WO2014087301A1 (en) * 2012-12-05 2014-06-12 Koninklijke Philips N.V. Illumination array with adapted distribution of radiation
WO2015011983A1 (ja) * 2013-07-22 2015-01-29 株式会社村田製作所 垂直共振面発光レーザアレイ

Also Published As

Publication number Publication date
TWI794849B (zh) 2023-03-01
JP7797569B2 (ja) 2026-01-13
JP7068772B2 (ja) 2022-05-17
TWI847513B (zh) 2024-07-01
US9837792B2 (en) 2017-12-05
US10090643B2 (en) 2018-10-02
CN118712879A (zh) 2024-09-27
TW201801431A (zh) 2018-01-01
TW202437627A (zh) 2024-09-16
KR102336974B1 (ko) 2021-12-08
US20170256914A1 (en) 2017-09-07
US20180048119A1 (en) 2018-02-15
DE102017101731A1 (de) 2017-09-07
US10511140B2 (en) 2019-12-17
JP2024100918A (ja) 2024-07-26
TW202139549A (zh) 2021-10-16
JP2017163140A (ja) 2017-09-14
CN107171180A (zh) 2017-09-15
US20180358780A1 (en) 2018-12-13
JP2022093631A (ja) 2022-06-23
TW202322503A (zh) 2023-06-01
KR20170104401A (ko) 2017-09-15
TWI734750B (zh) 2021-08-01

Similar Documents

Publication Publication Date Title
DE102017012567B4 (de) Lichtemittierende Vorrichtung
DE102016111923B4 (de) Lichtemissionsvorrichtungen
DE102008016074B4 (de) Licht emittierendes Halbleiterbauteil mit transparenten Mehrschichtelektroden
DE102009060747B4 (de) Halbleiterchip
DE102011116232B4 (de) Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE102016125857B4 (de) Halbleiterlaserdiode
EP1966836B1 (de) Led-halbleiterkörper und verwendung eines led-halbleiterkörpers
DE102017205639B4 (de) Lumineszenzdiode mit hoher Effizienz
DE102009006177A1 (de) Strahlungsemittierender Halbleiterchip
EP2499668A1 (de) Dünnfilm-halbleiterbauelement mit schutzdiodenstruktur und verfahren zur herstellung eines dünnfilm-halbleiterbauelements
DE102012106143A1 (de) Nitrid-Halbleiter-Leuchtdiodenvorrichtung
DE112017003572T5 (de) Ultraviolette lichtemittierende diode
DE102011011378A1 (de) Trägersubstrat und Verfahren zur Herstellung von Halbleiterchips
DE10153321B4 (de) Leuchtdiode mit Bragg-Reflektor und Verfahren zur Herstellung derselben
DE112016002539T5 (de) Leuchtdiode
DE102017119664A1 (de) Kantenemittierender Laserbarren
DE102019207928A1 (de) Leuchtdiode und lichtemittierende vorrichtung mit einer solchen diode
DE102016109022B4 (de) Laserdiodenchip
DE112018001225B4 (de) Strahlungsemittierender Halbleiterkörper und Halbleiterchip
WO2020234112A1 (de) Optoelektronischer halbleiterchip
DE102016124860A1 (de) Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102018120490A1 (de) Optoelektronisches halbleiterbauelement mit einer halbleiterkontaktschicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements
DE102016120685A1 (de) Verfahren zur Herstellung eines Halbleiterlasers und Halbleiterlaser
DE112020000795B4 (de) Optoelektronisches halbleiterbauelement mit abschnitten einer leitfähigen schicht und verfahren zur herstellung eines optoelektronischen halbleiterbauelements
WO2020239749A1 (de) Optoelektronisches halbleiterbauelement mit verbindungsbereichen und verfahren zur herstellung des optoelektronischen halbleiterbauelements

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R129 Divisional application from

Ref document number: 102017101731

Country of ref document: DE

R012 Request for examination validly filed
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01S0005187000

Ipc: H01S0005183000

R081 Change of applicant/patentee

Owner name: ENNOSTAR CORPORATION, TW

Free format text: FORMER OWNER: EPISTAR CORPORATION, HSINCHU, TW