DE102014211226B4 - Photoelektrische umwandlungseinrichtung und verfahren zum herstellen einer photoelektrischen umwandlungseinrichtung - Google Patents

Photoelektrische umwandlungseinrichtung und verfahren zum herstellen einer photoelektrischen umwandlungseinrichtung Download PDF

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DE102014211226B4
DE102014211226B4 DE102014211226.5A DE102014211226A DE102014211226B4 DE 102014211226 B4 DE102014211226 B4 DE 102014211226B4 DE 102014211226 A DE102014211226 A DE 102014211226A DE 102014211226 B4 DE102014211226 B4 DE 102014211226B4
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photoelectric conversion
mask
semiconductor region
orthogonal projection
conversion device
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German (de)
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DE102014211226A1 (de
Inventor
c/o CANON KABUSHIKI KAISHA Watanabe Takanori
c/o CANON KABUSHIKI KAISHA Miki Takafumi
c/o CANON KABUSHIKI KAISHA Ilda Satoko
c/o CANON KABUSHIKI KAISHA Kobayashi Masahiro
c/o CANON KABUSHIKI KAISHA Iwata Junji
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
DE102014211226.5A 2013-06-13 2014-06-12 Photoelektrische umwandlungseinrichtung und verfahren zum herstellen einer photoelektrischen umwandlungseinrichtung Active DE102014211226B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-124592 2013-06-13
JP2013124592A JP5932720B2 (ja) 2013-06-13 2013-06-13 光電変換装置、および、光電変換装置の製造方法。

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DE102014211226A1 DE102014211226A1 (de) 2014-12-18
DE102014211226B4 true DE102014211226B4 (de) 2017-11-30

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Country Status (5)

Country Link
US (1) US9437764B2 (https=)
JP (1) JP5932720B2 (https=)
CN (1) CN104241305B (https=)
DE (1) DE102014211226B4 (https=)
GB (1) GB2518261B (https=)

Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
JP6706481B2 (ja) * 2015-11-05 2020-06-10 ソニーセミコンダクタソリューションズ株式会社 撮像素子
JP6946379B2 (ja) * 2016-12-28 2021-10-06 キヤノン株式会社 固体撮像装置及び撮像システム
JP6840555B2 (ja) * 2017-01-30 2021-03-10 キヤノン株式会社 固体撮像装置及び撮像システム
CN108198829A (zh) * 2018-01-29 2018-06-22 德淮半导体有限公司 Cmos图像传感器及其形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100243864A1 (en) * 2009-03-31 2010-09-30 Sony Corporation Solid-state imaging device, manufacturing method of the same, and electronic apparatus
US20130015513A1 (en) * 2011-07-12 2013-01-17 Sony Corporation Solid-state imaging device, solid-state imaging device manufacturing method, and electronic device
US20130049081A1 (en) * 2011-08-31 2013-02-28 Sony Corporation Solid-state image sensing device and electronic apparatus

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
JP2000012828A (ja) 1998-06-24 2000-01-14 Sony Corp Ｃｃｄ固体撮像素子の製造方法
JP2000031451A (ja) * 1998-07-13 2000-01-28 Toshiba Corp 固体撮像装置およびその製造方法
JP3621273B2 (ja) * 1998-09-09 2005-02-16 松下電器産業株式会社 固体撮像装置およびその製造方法
JP2000150857A (ja) 1998-11-18 2000-05-30 Nec Corp 固体撮像装置及びその製造方法
JP2002164529A (ja) 2000-11-28 2002-06-07 Sony Corp 固体撮像素子およびその製造方法
JP2005167187A (ja) 2003-11-13 2005-06-23 Seiko Epson Corp 固体撮像装置及びその製造方法
KR20080016259A (ko) * 2006-08-18 2008-02-21 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
JP5374941B2 (ja) 2008-07-02 2013-12-25 ソニー株式会社 固体撮像装置及び電子機器
JP2011108824A (ja) 2009-11-17 2011-06-02 Panasonic Corp 固体撮像素子
JP2011146747A (ja) 2011-04-28 2011-07-28 Sony Corp 固体撮像装置の製造方法および半導体装置の製造方法
JP2014165286A (ja) * 2013-02-23 2014-09-08 Nikon Corp フォトダイオード、固体撮像素子及び撮像装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100243864A1 (en) * 2009-03-31 2010-09-30 Sony Corporation Solid-state imaging device, manufacturing method of the same, and electronic apparatus
US20130015513A1 (en) * 2011-07-12 2013-01-17 Sony Corporation Solid-state imaging device, solid-state imaging device manufacturing method, and electronic device
US20130049081A1 (en) * 2011-08-31 2013-02-28 Sony Corporation Solid-state image sensing device and electronic apparatus

Also Published As

Publication number Publication date
US20140367747A1 (en) 2014-12-18
CN104241305A (zh) 2014-12-24
GB2518261A (en) 2015-03-18
GB2518261B (en) 2016-06-29
DE102014211226A1 (de) 2014-12-18
US9437764B2 (en) 2016-09-06
GB201410584D0 (en) 2014-07-30
JP5932720B2 (ja) 2016-06-08
JP2015002192A (ja) 2015-01-05
CN104241305B (zh) 2017-04-12

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