DE102013202518A1 - P-Typ-Halbleitermaterial und Halbleitervorrichtung - Google Patents
P-Typ-Halbleitermaterial und Halbleitervorrichtung Download PDFInfo
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- DE102013202518A1 DE102013202518A1 DE102013202518A DE102013202518A DE102013202518A1 DE 102013202518 A1 DE102013202518 A1 DE 102013202518A1 DE 102013202518 A DE102013202518 A DE 102013202518A DE 102013202518 A DE102013202518 A DE 102013202518A DE 102013202518 A1 DE102013202518 A1 DE 102013202518A1
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- silicon substrate
- silicon
- oxide
- semiconductor layer
- molybdenum
- Prior art date
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- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 claims abstract description 56
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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| WO2013179444A1 (ja) * | 2012-05-31 | 2013-12-05 | 三洋電機株式会社 | テクスチャサイズの測定装置、太陽電池の製造システム、及び太陽電池の製造方法 |
| KR101458566B1 (ko) * | 2013-05-21 | 2014-11-07 | 재단법인대구경북과학기술원 | 정류소자 및 그의 제조 방법 |
| KR101457812B1 (ko) * | 2013-08-19 | 2014-11-05 | 포항공과대학교 산학협력단 | 양방향 스위칭 특성을 갖는 2-단자 스위칭 소자, 이의 제조방법 및 이를 포함하는 저항성 메모리 소자 크로스-포인트 어레이 |
| JP6567539B2 (ja) * | 2013-11-04 | 2019-08-28 | コロンバス・フォトヴォルテイクス・リミテッド・ライアビリティ・カンパニー | 光起電力セル、回路、及び方法 |
| KR20160052270A (ko) * | 2014-11-04 | 2016-05-12 | 엘지전자 주식회사 | 태양 전지 |
| US10566483B2 (en) | 2015-03-17 | 2020-02-18 | Lg Electronics Inc. | Solar cell |
| US20160351733A1 (en) * | 2015-06-01 | 2016-12-01 | International Business Machines Corporation | Dry etch method for texturing silicon and device |
| US20170098722A1 (en) * | 2015-10-01 | 2017-04-06 | Lg Electronics Inc. | Solar cell |
| CN109643660B (zh) * | 2016-08-31 | 2024-03-05 | 株式会社Flosfia | p-型氧化物半导体及其制造方法 |
| US20190305149A1 (en) * | 2016-10-25 | 2019-10-03 | Shin-Etsu Chemical Co., Ltd. | Solar cell with high photoelectric conversion efficiency and method for manufacturing solar cell with high photoelectric conversion efficiency |
| CN109891604A (zh) | 2016-10-25 | 2019-06-14 | 信越化学工业株式会社 | 高光电变换效率太阳能电池及高光电变换效率太阳能电池的制造方法 |
| KR101995833B1 (ko) * | 2016-11-14 | 2019-07-03 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| KR102704085B1 (ko) * | 2017-01-20 | 2024-09-06 | 트리나 솔라 컴패니 리미티드 | 이종 접합 태양전지 및 이의 제조 방법 |
| KR102514785B1 (ko) * | 2017-05-19 | 2023-03-29 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 및 이의 제조 방법 |
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| CN108389929A (zh) * | 2018-04-11 | 2018-08-10 | 浙江师范大学 | 一种选择性接触晶体硅异质结太阳能电池及其制备方法 |
| CN108878570B (zh) * | 2018-06-01 | 2020-06-26 | 上海大学 | 空穴选择型MoOx/SiOx(Mo)/n-Si异质结、太阳电池器件及其制备方法 |
| AU2019290813B2 (en) * | 2018-06-22 | 2022-07-28 | Jingao Solar Co., Ltd. | Crystalline silicon solar cell and preparation method therefor, and photovoltaic assembly |
| CN113193062A (zh) * | 2021-04-13 | 2021-07-30 | Tcl华星光电技术有限公司 | 光电传感器及其制作方法、显示面板 |
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Also Published As
| Publication number | Publication date |
|---|---|
| US8772770B2 (en) | 2014-07-08 |
| US20150001535A1 (en) | 2015-01-01 |
| JP2013234106A (ja) | 2013-11-21 |
| JP2017143279A (ja) | 2017-08-17 |
| JP6329660B2 (ja) | 2018-05-23 |
| US20130214271A1 (en) | 2013-08-22 |
| US9159793B2 (en) | 2015-10-13 |
| JP6108858B2 (ja) | 2017-04-05 |
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