JP6108858B2 - ｐ型半導体材料および半導体装置 - Google Patents

ｐ型半導体材料および半導体装置 Download PDF

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Publication number
JP6108858B2
JP6108858B2 JP2013025334A JP2013025334A JP6108858B2 JP 6108858 B2 JP6108858 B2 JP 6108858B2 JP 2013025334 A JP2013025334 A JP 2013025334A JP 2013025334 A JP2013025334 A JP 2013025334A JP 6108858 B2 JP6108858 B2 JP 6108858B2
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silicon
silicon substrate
oxide
semiconductor layer
layer
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JP2013234106A5 (https=
JP2013234106A (ja
Inventor
良信 浅見
良信 浅見
李甫 堅石
李甫 堅石
彫 菊地
彫 菊地
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
JP2013025334A 2012-02-17 2013-02-13 ｐ型半導体材料および半導体装置 Active JP6108858B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013025334A JP6108858B2 (ja) 2012-02-17 2013-02-13 ｐ型半導体材料および半導体装置

Applications Claiming Priority (7)

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JP2012032659 2012-02-17
JP2012032659 2012-02-17
JP2012032644 2012-02-17
JP2012032644 2012-02-17
JP2012092002 2012-04-13
JP2012092002 2012-04-13
JP2013025334A JP6108858B2 (ja) 2012-02-17 2013-02-13 ｐ型半導体材料および半導体装置

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JP2017042612A Division JP6329660B2 (ja) 2012-02-17 2017-03-07 光電変換装置

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JP2013234106A JP2013234106A (ja) 2013-11-21
JP2013234106A5 JP2013234106A5 (https=) 2016-02-25
JP6108858B2 true JP6108858B2 (ja) 2017-04-05

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JP2017042612A Expired - Fee Related JP6329660B2 (ja) 2012-02-17 2017-03-07 光電変換装置

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JP (2) JP6108858B2 (https=)
DE (1) DE102013202518A1 (https=)

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Also Published As

Publication number Publication date
US8772770B2 (en) 2014-07-08
US20150001535A1 (en) 2015-01-01
JP2013234106A (ja) 2013-11-21
JP2017143279A (ja) 2017-08-17
JP6329660B2 (ja) 2018-05-23
US20130214271A1 (en) 2013-08-22
DE102013202518A1 (de) 2013-08-22
US9159793B2 (en) 2015-10-13

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