DE102013005499B4 - Elektroplattierungszusammensetzung und Verfahren zum Abscheiden einer Silberschicht - Google Patents

Elektroplattierungszusammensetzung und Verfahren zum Abscheiden einer Silberschicht Download PDF

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Publication number
DE102013005499B4
DE102013005499B4 DE102013005499.0A DE102013005499A DE102013005499B4 DE 102013005499 B4 DE102013005499 B4 DE 102013005499B4 DE 102013005499 A DE102013005499 A DE 102013005499A DE 102013005499 B4 DE102013005499 B4 DE 102013005499B4
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DE
Germany
Prior art keywords
silver
alkyl
tin
acid
hydroxy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102013005499.0A
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German (de)
English (en)
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DE102013005499A1 (de
Inventor
Duane R. Romer
Elissei Iagodkine
Inho Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DDP Specialty Electronic Materials US LLC
DuPont Electronic Materials International LLC
Original Assignee
Dow Global Technologies LLC
Rohm and Haas Electronic Materials LLC
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Publication of DE102013005499A1 publication Critical patent/DE102013005499A1/de
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/46—Electroplating: Baths therefor from solutions of silver
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/64—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of silver
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/42—Coating with noble metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01255—Changing the shapes of bumps by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01257—Changing the shapes of bumps by reflowing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
    • H10W72/01938—Manufacture or treatment of bond pads using blanket deposition in gaseous form, e.g. by CVD or PVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • H10W72/223—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core characterised by the structure of the outermost layers, e.g. multilayered coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/255—Materials of outermost layers of multilayered bumps, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
DE102013005499.0A 2012-03-30 2013-03-28 Elektroplattierungszusammensetzung und Verfahren zum Abscheiden einer Silberschicht Active DE102013005499B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/435,683 2012-03-30
US13/435,683 US8980077B2 (en) 2012-03-30 2012-03-30 Plating bath and method

Publications (2)

Publication Number Publication Date
DE102013005499A1 DE102013005499A1 (de) 2013-10-02
DE102013005499B4 true DE102013005499B4 (de) 2016-10-06

Family

ID=49154843

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102013005499.0A Active DE102013005499B4 (de) 2012-03-30 2013-03-28 Elektroplattierungszusammensetzung und Verfahren zum Abscheiden einer Silberschicht

Country Status (7)

Country Link
US (1) US8980077B2 (https=)
JP (1) JP6141664B2 (https=)
KR (1) KR102055598B1 (https=)
CN (1) CN103361683B (https=)
DE (1) DE102013005499B4 (https=)
SG (1) SG193763A1 (https=)
TW (1) TWI525223B (https=)

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US8877630B1 (en) * 2013-11-12 2014-11-04 Chipmos Technologies Inc. Semiconductor structure having a silver alloy bump body and manufacturing method thereof
US10889907B2 (en) * 2014-02-21 2021-01-12 Rohm And Haas Electronic Materials Llc Cyanide-free acidic matte silver electroplating compositions and methods
US9368340B2 (en) 2014-06-02 2016-06-14 Lam Research Corporation Metallization of the wafer edge for optimized electroplating performance on resistive substrates
US10154598B2 (en) * 2014-10-13 2018-12-11 Rohm And Haas Electronic Materials Llc Filling through-holes
EP3271964A4 (en) * 2015-03-19 2018-10-17 Primus Power Corporation Flow battery electrolyte compositions containing a chelating agent and a metal plating enhancer
US9850588B2 (en) * 2015-09-09 2017-12-26 Rohm And Haas Electronic Materials Llc Bismuth electroplating baths and methods of electroplating bismuth on a substrate
JP6834070B2 (ja) * 2016-06-13 2021-02-24 石原ケミカル株式会社 電気スズ及びスズ合金メッキ浴、当該メッキ浴を用いて電着物を形成した電子部品の製造方法
US10428436B2 (en) * 2016-07-18 2019-10-01 Rohm And Haas Electronic Materials Llc Indium electroplating compositions containing amine compounds and methods of electroplating indium
CN106098420B (zh) * 2016-07-25 2018-05-25 桂林电子科技大学 一种电触头表面镀层添加材料及电触头制造方法
US11926918B2 (en) 2016-12-20 2024-03-12 Basf Se Composition for metal plating comprising suppressing agent for void free filing
US11535946B2 (en) 2017-06-01 2022-12-27 Basf Se Composition for tin or tin alloy electroplating comprising leveling agent
US10329681B2 (en) * 2017-11-02 2019-06-25 National Chung Shan Institute Of Science And Technology Copper-silver dual-component metal electroplating solution and electroplating method for semiconductor wire
US11459665B2 (en) 2017-12-20 2022-10-04 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
EP3775325B1 (en) 2018-03-29 2024-08-28 Basf Se Composition for tin-silver alloy electroplating comprising a complexing agent
EP3781729B1 (en) 2018-04-20 2024-09-25 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
JP6645609B2 (ja) * 2018-07-27 2020-02-14 三菱マテリアル株式会社 錫合金めっき液
CN109837572A (zh) * 2019-04-03 2019-06-04 浙江亚通焊材有限公司 一种Sn-Bi系无铅低温焊料的电沉积方法
CN114402096A (zh) 2019-09-16 2022-04-26 巴斯夫欧洲公司 用于锡-银合金电镀的包含配位剂的组合物
US20210172082A1 (en) * 2019-12-10 2021-06-10 Rohm And Haas Electronic Materials Llc Acidic aqueous binary silver-bismuth alloy electroplating compositions and methods
JP7770766B2 (ja) * 2020-02-25 2025-11-17 Ｄｏｗａメタルテック株式会社 銀めっき材およびその製造方法
CN115279949A (zh) 2020-02-25 2022-11-01 同和金属技术有限公司 镀银材料及其制造方法
WO2022129238A1 (en) 2020-12-18 2022-06-23 Basf Se Composition for tin or tin alloy electroplating comprising leveling agent
US11578418B2 (en) 2021-03-29 2023-02-14 Rohm And Haas Electronic Materials Llc (Rhem) Silver electroplating compositions and methods for electroplating silver with low coefficients of friction
JP7749358B2 (ja) * 2021-06-29 2025-10-06 Ｄｏｗａメタルテック株式会社 銀めっき材およびその製造方法
EP4437167A1 (en) 2021-11-22 2024-10-02 Basf Se Composition for tin or tin alloy electroplating comprising a pyrazole-type antioxidant
WO2024022979A1 (en) 2022-07-26 2024-02-01 Basf Se Composition for tin or tin alloy electroplating comprising leveling agent

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US6998036B2 (en) * 2000-05-30 2006-02-14 Dr.-Ing. Max Schlotter Gmbh & Co. Kg Electrolyte and method for depositing tin-silver alloy layers
US7628903B1 (en) * 2000-05-02 2009-12-08 Ishihara Chemical Co., Ltd. Silver and silver alloy plating bath

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US4246077A (en) * 1975-03-12 1981-01-20 Technic, Inc. Non-cyanide bright silver electroplating bath therefor, silver compounds and method of making silver compounds
US4871429A (en) * 1981-09-11 1989-10-03 Learonal, Inc Limiting tin sludge formation in tin or tin/lead electroplating solutions
US4582576A (en) * 1985-03-26 1986-04-15 Mcgean-Rohco, Inc. Plating bath and method for electroplating tin and/or lead
US7628903B1 (en) * 2000-05-02 2009-12-08 Ishihara Chemical Co., Ltd. Silver and silver alloy plating bath
US6998036B2 (en) * 2000-05-30 2006-02-14 Dr.-Ing. Max Schlotter Gmbh & Co. Kg Electrolyte and method for depositing tin-silver alloy layers

Also Published As

Publication number Publication date
KR20130111454A (ko) 2013-10-10
US20130256145A1 (en) 2013-10-03
CN103361683A (zh) 2013-10-23
DE102013005499A1 (de) 2013-10-02
TW201400646A (zh) 2014-01-01
SG193763A1 (en) 2013-10-30
CN103361683B (zh) 2016-08-10
JP2013216975A (ja) 2013-10-24
US8980077B2 (en) 2015-03-17
JP6141664B2 (ja) 2017-06-07
TWI525223B (zh) 2016-03-11
KR102055598B1 (ko) 2019-12-13

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