DE102011122937B3 - Verfahren zum Herstellen einer Übertragungsmaske und Verfahren zum Herstellen eines Halbleiterbauelements - Google Patents

Verfahren zum Herstellen einer Übertragungsmaske und Verfahren zum Herstellen eines Halbleiterbauelements Download PDF

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Publication number
DE102011122937B3
DE102011122937B3 DE102011122937.3A DE102011122937A DE102011122937B3 DE 102011122937 B3 DE102011122937 B3 DE 102011122937B3 DE 102011122937 A DE102011122937 A DE 102011122937A DE 102011122937 B3 DE102011122937 B3 DE 102011122937B3
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DE
Germany
Prior art keywords
light
layer
shielding layer
pattern
tantalum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102011122937.3A
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German (de)
English (en)
Inventor
Hiroaki Shishido
Osamu Nozawa
Toshiyuki Suzuki
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Hoya Corp
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Hoya Corp
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Filing date
Publication date
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Publication of DE102011122937B3 publication Critical patent/DE102011122937B3/de
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE102011122937.3A 2010-03-30 2011-03-29 Verfahren zum Herstellen einer Übertragungsmaske und Verfahren zum Herstellen eines Halbleiterbauelements Expired - Fee Related DE102011122937B3 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010079327 2010-03-30
JP2010-079327 2010-03-30
JP2011-037970 2011-02-24
JP2011037970A JP5142340B2 (ja) 2010-03-30 2011-02-24 転写用マスクの製造方法

Publications (1)

Publication Number Publication Date
DE102011122937B3 true DE102011122937B3 (de) 2016-11-24

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
DE102011122937.3A Expired - Fee Related DE102011122937B3 (de) 2010-03-30 2011-03-29 Verfahren zum Herstellen einer Übertragungsmaske und Verfahren zum Herstellen eines Halbleiterbauelements
DE102011006354.4A Expired - Fee Related DE102011006354B4 (de) 2010-03-30 2011-03-29 Maskenrohling, Übertragungsmaske und Verfahren zum Herstellen eines Halbleiterbauelements

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE102011006354.4A Expired - Fee Related DE102011006354B4 (de) 2010-03-30 2011-03-29 Maskenrohling, Übertragungsmaske und Verfahren zum Herstellen eines Halbleiterbauelements

Country Status (5)

Country Link
US (1) US8435704B2 (enExample)
JP (3) JP5142340B2 (enExample)
KR (1) KR101671052B1 (enExample)
DE (2) DE102011122937B3 (enExample)
TW (1) TWI514067B (enExample)

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WO2012086744A1 (ja) * 2010-12-24 2012-06-28 Hoya株式会社 マスクブランク及びその製造方法、並びに転写用マスク及びその製造方法
JP5920965B2 (ja) * 2011-05-20 2016-05-24 Hoya株式会社 マスクブランクの製造方法、転写用マスク用の製造方法、および半導体デバイスの製造方法
KR101862166B1 (ko) * 2012-03-14 2018-05-29 호야 가부시키가이샤 마스크 블랭크, 및 전사용 마스크의 제조방법
US20150079502A1 (en) * 2012-03-14 2015-03-19 Hoya Corporation Mask blank and method of manufacturing a transfer mask
US8974988B2 (en) * 2012-04-20 2015-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Mask and method for forming the same
JP5670502B2 (ja) 2012-04-30 2015-02-18 株式会社エスアンドエス テック 位相反転ブランクマスク及びその製造方法
KR101269062B1 (ko) * 2012-06-29 2013-05-29 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토 마스크 제조방법
JP6394496B2 (ja) * 2014-07-15 2018-09-26 信越化学工業株式会社 バイナリフォトマスクブランク、その製造方法、及びバイナリフォトマスクの製造方法
JP6544964B2 (ja) * 2015-03-31 2019-07-17 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法
JP6370255B2 (ja) * 2015-04-07 2018-08-08 信越化学工業株式会社 ペリクル用フレーム及びそれを用いたペリクル
DE102016203442A1 (de) 2016-03-02 2017-09-07 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage und Verfahren zum Vermessen eines Projektionsobjektives
JP7009746B2 (ja) * 2017-02-15 2022-01-26 大日本印刷株式会社 Ｈａｚｅの除去方法、及びフォトマスクの製造方法
JP6833773B2 (ja) * 2018-08-30 2021-02-24 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法
CN113311660B (zh) * 2021-06-03 2023-07-18 上海传芯半导体有限公司 掩模基版的制作方法及具有等离子体加热装置的涂胶设备
WO2025142703A1 (ja) * 2023-12-27 2025-07-03 Hoya株式会社 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
WO2025142825A1 (ja) * 2023-12-27 2025-07-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
CN119065196A (zh) * 2024-08-12 2024-12-03 上海华力集成电路制造有限公司 解决光罩表面遮光材料析出的方法

Citations (3)

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US20060257752A1 (en) * 2005-05-16 2006-11-16 Pkl Co., Ltd. Phase shift mask for preventing haze
US20090226826A1 (en) * 2008-02-27 2009-09-10 Hoya Corporation Photomask blank, photomask, and photomask manufacturing method

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JP3474274B2 (ja) * 1994-09-08 2003-12-08 株式会社東芝 サーマルヘッド
JPH09146259A (ja) * 1995-08-29 1997-06-06 Ricoh Opt Ind Co Ltd グラデーションマスクとその製造方法およびグラデーションマスクを用いた特殊表面形状の創成方法
JP2001083687A (ja) 1999-09-09 2001-03-30 Dainippon Printing Co Ltd ハーフトーン位相シフトフォトマスク及びこれを作製するためのハーフトーン位相シフトフォトマスク用ブランクス
JP4686006B2 (ja) * 2000-04-27 2011-05-18 大日本印刷株式会社 ハーフトーン位相シフトフォトマスクとハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクの製造方法
JP2002196473A (ja) * 2000-12-22 2002-07-12 Dainippon Printing Co Ltd フォトマスク
DE10223113B4 (de) 2002-05-21 2007-09-13 Infineon Technologies Ag Verfahren zur Herstellung einer photolithographischen Maske
JP2005208660A (ja) * 2004-01-22 2005-08-04 Schott Ag 超高透過率の位相シフト型のマスクブランク
JP4407815B2 (ja) * 2004-09-10 2010-02-03 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP2006078825A (ja) 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
KR101171136B1 (ko) * 2004-11-08 2012-08-03 호야 가부시키가이샤 마스크블랭크의 제조방법
EP1746460B1 (en) * 2005-07-21 2011-04-06 Shin-Etsu Chemical Co., Ltd. Photomask blank, photomask and fabrication method thereof
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JP4346656B2 (ja) * 2007-05-28 2009-10-21 Ｈｏｙａ株式会社 反射型マスクブランク及び反射型マスク
JP5053030B2 (ja) * 2007-10-16 2012-10-17 大日本印刷株式会社 フォトマスクの欠陥修正方法、製造方法および欠陥修正装置
JP4465405B2 (ja) 2008-02-27 2010-05-19 Ｈｏｙａ株式会社 フォトマスクブランクおよびフォトマスク並びにこれらの製造方法
WO2009116348A1 (ja) * 2008-03-18 2009-09-24 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP5345333B2 (ja) * 2008-03-31 2013-11-20 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びその製造方法
US20110096595A1 (en) * 2008-06-20 2011-04-28 Masayuki Terai Semiconductor memory device and operation method thereof
JP2010192503A (ja) 2009-02-16 2010-09-02 Seiko Epson Corp フォトマスクおよびフォトマスクの製造方法
JP5714266B2 (ja) 2009-08-25 2015-05-07 Hoya株式会社 マスクブランク、転写用マスクおよびこれらの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020058186A1 (en) * 2000-09-12 2002-05-16 Hoya Corporation Method for manufacturing phase shift mask blank and method for manufacturing phase shift mask
US20060257752A1 (en) * 2005-05-16 2006-11-16 Pkl Co., Ltd. Phase shift mask for preventing haze
US20090226826A1 (en) * 2008-02-27 2009-09-10 Hoya Corporation Photomask blank, photomask, and photomask manufacturing method

Also Published As

Publication number Publication date
JP2011227461A (ja) 2011-11-10
TWI514067B (zh) 2015-12-21
JP2015121827A (ja) 2015-07-02
JP2012190048A (ja) 2012-10-04
US20110244373A1 (en) 2011-10-06
DE102011006354A1 (de) 2012-01-12
JP5872721B2 (ja) 2016-03-01
KR20130102512A (ko) 2013-09-17
TW201207553A (en) 2012-02-16
JP5142340B2 (ja) 2013-02-13
JP5726814B2 (ja) 2015-06-03
US8435704B2 (en) 2013-05-07
DE102011006354B4 (de) 2016-11-10
KR101671052B1 (ko) 2016-10-31

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