JP5142340B2 - 転写用マスクの製造方法 - Google Patents

転写用マスクの製造方法 Download PDF

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Publication number
JP5142340B2
JP5142340B2 JP2011037970A JP2011037970A JP5142340B2 JP 5142340 B2 JP5142340 B2 JP 5142340B2 JP 2011037970 A JP2011037970 A JP 2011037970A JP 2011037970 A JP2011037970 A JP 2011037970A JP 5142340 B2 JP5142340 B2 JP 5142340B2
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JP
Japan
Prior art keywords
shielding film
layer
light
light shielding
film pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011037970A
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English (en)
Japanese (ja)
Other versions
JP2011227461A (ja
Inventor
順 野澤
博明 宍戸
寿幸 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2011037970A priority Critical patent/JP5142340B2/ja
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to DE102011122937.3A priority patent/DE102011122937B3/de
Priority to DE102011006354.4A priority patent/DE102011006354B4/de
Priority to TW100110685A priority patent/TWI514067B/zh
Priority to KR1020110028150A priority patent/KR101357420B1/ko
Priority to US13/076,254 priority patent/US8524421B2/en
Publication of JP2011227461A publication Critical patent/JP2011227461A/ja
Application granted granted Critical
Publication of JP5142340B2 publication Critical patent/JP5142340B2/ja
Priority to KR1020130088262A priority patent/KR101671052B1/ko
Priority to US13/955,831 priority patent/US9140980B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • H10P76/2041—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
JP2011037970A 2010-03-30 2011-02-24 転写用マスクの製造方法 Expired - Fee Related JP5142340B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2011037970A JP5142340B2 (ja) 2010-03-30 2011-02-24 転写用マスクの製造方法
DE102011006354.4A DE102011006354B4 (de) 2010-03-30 2011-03-29 Maskenrohling, Übertragungsmaske und Verfahren zum Herstellen eines Halbleiterbauelements
TW100110685A TWI514067B (zh) 2010-03-30 2011-03-29 光罩基板、轉印用光罩與其製造方法、及半導體裝置之製造方法
KR1020110028150A KR101357420B1 (ko) 2010-03-30 2011-03-29 마스크 블랭크, 전사용 마스크 및 이들의 제조 방법과 반도체 디바이스의 제조 방법
DE102011122937.3A DE102011122937B3 (de) 2010-03-30 2011-03-29 Verfahren zum Herstellen einer Übertragungsmaske und Verfahren zum Herstellen eines Halbleiterbauelements
US13/076,254 US8524421B2 (en) 2010-03-30 2011-03-30 Mask blank, transfer mask, methods of manufacturing the same and method of manufacturing a semiconductor device
KR1020130088262A KR101671052B1 (ko) 2010-03-30 2013-07-25 마스크 블랭크, 전사용 마스크 및 이들의 제조 방법과 반도체 디바이스의 제조 방법
US13/955,831 US9140980B2 (en) 2010-03-30 2013-07-31 Method of manufacturing a transfer mask and method of manufacturing a semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010079327 2010-03-30
JP2010079327 2010-03-30
JP2011037970A JP5142340B2 (ja) 2010-03-30 2011-02-24 転写用マスクの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012130515A Division JP5726814B2 (ja) 2010-03-30 2012-06-08 マスクブランク、転写用マスクおよびこれらの製造方法、並びに半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
JP2011227461A JP2011227461A (ja) 2011-11-10
JP5142340B2 true JP5142340B2 (ja) 2013-02-13

Family

ID=44710070

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2011037970A Expired - Fee Related JP5142340B2 (ja) 2010-03-30 2011-02-24 転写用マスクの製造方法
JP2012130515A Active JP5726814B2 (ja) 2010-03-30 2012-06-08 マスクブランク、転写用マスクおよびこれらの製造方法、並びに半導体デバイスの製造方法
JP2015074812A Active JP5872721B2 (ja) 2010-03-30 2015-04-01 マスクブランク、転写用マスクおよび半導体デバイスの製造方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2012130515A Active JP5726814B2 (ja) 2010-03-30 2012-06-08 マスクブランク、転写用マスクおよびこれらの製造方法、並びに半導体デバイスの製造方法
JP2015074812A Active JP5872721B2 (ja) 2010-03-30 2015-04-01 マスクブランク、転写用マスクおよび半導体デバイスの製造方法

Country Status (5)

Country Link
US (1) US8435704B2 (enExample)
JP (3) JP5142340B2 (enExample)
KR (1) KR101671052B1 (enExample)
DE (2) DE102011006354B4 (enExample)
TW (1) TWI514067B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9091934B2 (en) * 2010-12-24 2015-07-28 Hoya Corporation Mask blank, method of manufacturing the same, transfer mask, and method of manufacturing the same
JP5920965B2 (ja) * 2011-05-20 2016-05-24 Hoya株式会社 マスクブランクの製造方法、転写用マスク用の製造方法、および半導体デバイスの製造方法
WO2013136882A1 (ja) * 2012-03-14 2013-09-19 Hoya株式会社 マスクブランク、及び転写用マスクの製造方法
US20150079502A1 (en) * 2012-03-14 2015-03-19 Hoya Corporation Mask blank and method of manufacturing a transfer mask
US8974988B2 (en) * 2012-04-20 2015-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Mask and method for forming the same
JP5670502B2 (ja) * 2012-04-30 2015-02-18 株式会社エスアンドエス テック 位相反転ブランクマスク及びその製造方法
KR101269062B1 (ko) 2012-06-29 2013-05-29 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토 마스크 제조방법
JP6394496B2 (ja) * 2014-07-15 2018-09-26 信越化学工業株式会社 バイナリフォトマスクブランク、その製造方法、及びバイナリフォトマスクの製造方法
JP6544964B2 (ja) * 2015-03-31 2019-07-17 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法
JP6370255B2 (ja) * 2015-04-07 2018-08-08 信越化学工業株式会社 ペリクル用フレーム及びそれを用いたペリクル
DE102016203442A1 (de) * 2016-03-02 2017-09-07 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage und Verfahren zum Vermessen eines Projektionsobjektives
JP7009746B2 (ja) * 2017-02-15 2022-01-26 大日本印刷株式会社 Ｈａｚｅの除去方法、及びフォトマスクの製造方法
JP6833773B2 (ja) * 2018-08-30 2021-02-24 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法
CN113311660B (zh) * 2021-06-03 2023-07-18 上海传芯半导体有限公司 掩模基版的制作方法及具有等离子体加热装置的涂胶设备
WO2025142703A1 (ja) * 2023-12-27 2025-07-03 Hoya株式会社 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
WO2025142825A1 (ja) * 2023-12-27 2025-07-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
CN119065196A (zh) * 2024-08-12 2024-12-03 上海华力集成电路制造有限公司 解决光罩表面遮光材料析出的方法

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JPS57161857A (en) 1981-03-31 1982-10-05 Dainippon Printing Co Ltd Photomask blank plate
JP3474274B2 (ja) * 1994-09-08 2003-12-08 株式会社東芝 サーマルヘッド
JPH09146259A (ja) * 1995-08-29 1997-06-06 Ricoh Opt Ind Co Ltd グラデーションマスクとその製造方法およびグラデーションマスクを用いた特殊表面形状の創成方法
JP2001083687A (ja) 1999-09-09 2001-03-30 Dainippon Printing Co Ltd ハーフトーン位相シフトフォトマスク及びこれを作製するためのハーフトーン位相シフトフォトマスク用ブランクス
JP4686006B2 (ja) * 2000-04-27 2011-05-18 大日本印刷株式会社 ハーフトーン位相シフトフォトマスクとハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクの製造方法
JP3722029B2 (ja) * 2000-09-12 2005-11-30 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法、及び位相シフトマスクの製造方法
JP2002196473A (ja) * 2000-12-22 2002-07-12 Dainippon Printing Co Ltd フォトマスク
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JP2005208660A (ja) * 2004-01-22 2005-08-04 Schott Ag 超高透過率の位相シフト型のマスクブランク
JP2006078825A (ja) 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
JP4407815B2 (ja) * 2004-09-10 2010-02-03 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
WO2006049240A1 (ja) * 2004-11-08 2006-05-11 Hoya Corporation マスクブランクの製造方法
KR100617389B1 (ko) * 2005-05-16 2006-08-31 주식회사 피케이엘 헤이즈 방지를 위한 위상편이 마스크
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JP4346656B2 (ja) * 2007-05-28 2009-10-21 Ｈｏｙａ株式会社 反射型マスクブランク及び反射型マスク
JP5053030B2 (ja) * 2007-10-16 2012-10-17 大日本印刷株式会社 フォトマスクの欠陥修正方法、製造方法および欠陥修正装置
JP4845978B2 (ja) * 2008-02-27 2011-12-28 Ｈｏｙａ株式会社 フォトマスクブランクおよびフォトマスク並びにフォトマスクの製造方法
JP4465405B2 (ja) 2008-02-27 2010-05-19 Ｈｏｙａ株式会社 フォトマスクブランクおよびフォトマスク並びにこれらの製造方法
EP2256789B1 (en) * 2008-03-18 2012-07-04 Asahi Glass Company, Limited Reflective mask blank for euv lithography
JP5345333B2 (ja) * 2008-03-31 2013-11-20 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びその製造方法
US20110096595A1 (en) * 2008-06-20 2011-04-28 Masayuki Terai Semiconductor memory device and operation method thereof
JP2010192503A (ja) 2009-02-16 2010-09-02 Seiko Epson Corp フォトマスクおよびフォトマスクの製造方法
JP5714266B2 (ja) 2009-08-25 2015-05-07 Hoya株式会社 マスクブランク、転写用マスクおよびこれらの製造方法

Also Published As

Publication number Publication date
DE102011006354A1 (de) 2012-01-12
TW201207553A (en) 2012-02-16
JP5872721B2 (ja) 2016-03-01
KR20130102512A (ko) 2013-09-17
JP2011227461A (ja) 2011-11-10
US20110244373A1 (en) 2011-10-06
KR101671052B1 (ko) 2016-10-31
JP5726814B2 (ja) 2015-06-03
DE102011122937B3 (de) 2016-11-24
JP2012190048A (ja) 2012-10-04
US8435704B2 (en) 2013-05-07
JP2015121827A (ja) 2015-07-02
TWI514067B (zh) 2015-12-21
DE102011006354B4 (de) 2016-11-10

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