TWI514067B - 光罩基板、轉印用光罩與其製造方法、及半導體裝置之製造方法 - Google Patents
光罩基板、轉印用光罩與其製造方法、及半導體裝置之製造方法 Download PDFInfo
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- TWI514067B TWI514067B TW100110685A TW100110685A TWI514067B TW I514067 B TWI514067 B TW I514067B TW 100110685 A TW100110685 A TW 100110685A TW 100110685 A TW100110685 A TW 100110685A TW I514067 B TWI514067 B TW I514067B
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- transfer
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Links
- 238000012546 transfer Methods 0.000 title claims description 209
- 238000004519 manufacturing process Methods 0.000 title claims description 71
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 238000000034 method Methods 0.000 title description 21
- 239000010410 layer Substances 0.000 claims description 450
- 239000000758 substrate Substances 0.000 claims description 206
- 229910052760 oxygen Inorganic materials 0.000 claims description 137
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 133
- 239000001301 oxygen Substances 0.000 claims description 133
- 238000007254 oxidation reaction Methods 0.000 claims description 124
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 50
- 239000007789 gas Substances 0.000 claims description 46
- 238000004381 surface treatment Methods 0.000 claims description 32
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 31
- 229910052707 ruthenium Inorganic materials 0.000 claims description 31
- 238000001228 spectrum Methods 0.000 claims description 30
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 19
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 10
- 238000010183 spectrum analysis Methods 0.000 claims description 7
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- 229920002120 photoresistant polymer Polymers 0.000 description 33
- 230000015572 biosynthetic process Effects 0.000 description 32
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 30
- 150000004767 nitrides Chemical class 0.000 description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- 239000000126 substance Substances 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
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- 238000001755 magnetron sputter deposition Methods 0.000 description 11
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 11
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 230000007547 defect Effects 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 9
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- 229910001925 ruthenium oxide Inorganic materials 0.000 description 7
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- 206010059866 Drug resistance Diseases 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- 238000005477 sputtering target Methods 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 238000011221 initial treatment Methods 0.000 description 4
- 229910052758 niobium Inorganic materials 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
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- 230000003746 surface roughness Effects 0.000 description 4
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- 238000005406 washing Methods 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
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- 229910021641 deionized water Inorganic materials 0.000 description 3
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- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 229910000410 antimony oxide Inorganic materials 0.000 description 2
- MKTJTLRLXTUJCM-UHFFFAOYSA-N azanium;hydrogen peroxide;hydroxide Chemical compound [NH4+].[OH-].OO MKTJTLRLXTUJCM-UHFFFAOYSA-N 0.000 description 2
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- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
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- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
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- UYJXRRSPUVSSMN-UHFFFAOYSA-P ammonium sulfide Chemical compound [NH4+].[NH4+].[S-2] UYJXRRSPUVSSMN-UHFFFAOYSA-P 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- DRVWBEJJZZTIGJ-UHFFFAOYSA-N cerium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Ce+3].[Ce+3] DRVWBEJJZZTIGJ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 229910052739 hydrogen Inorganic materials 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
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- 229910052741 iridium Inorganic materials 0.000 description 1
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- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000007721 medicinal effect Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- YUSUJSHEOICGOO-UHFFFAOYSA-N molybdenum rhenium Chemical compound [Mo].[Mo].[Re].[Re].[Re] YUSUJSHEOICGOO-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
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- 238000007747 plating Methods 0.000 description 1
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- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010079327 | 2010-03-30 | ||
| JP2011037970A JP5142340B2 (ja) | 2010-03-30 | 2011-02-24 | 転写用マスクの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201207553A TW201207553A (en) | 2012-02-16 |
| TWI514067B true TWI514067B (zh) | 2015-12-21 |
Family
ID=44710070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100110685A TWI514067B (zh) | 2010-03-30 | 2011-03-29 | 光罩基板、轉印用光罩與其製造方法、及半導體裝置之製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8435704B2 (enExample) |
| JP (3) | JP5142340B2 (enExample) |
| KR (1) | KR101671052B1 (enExample) |
| DE (2) | DE102011006354B4 (enExample) |
| TW (1) | TWI514067B (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101883025B1 (ko) * | 2010-12-24 | 2018-07-27 | 호야 가부시키가이샤 | 마스크 블랭크 및 그 제조 방법, 및 전사용 마스크 및 그 제조 방법 |
| JP5920965B2 (ja) * | 2011-05-20 | 2016-05-24 | Hoya株式会社 | マスクブランクの製造方法、転写用マスク用の製造方法、および半導体デバイスの製造方法 |
| KR101862166B1 (ko) * | 2012-03-14 | 2018-05-29 | 호야 가부시키가이샤 | 마스크 블랭크, 및 전사용 마스크의 제조방법 |
| US20150079502A1 (en) * | 2012-03-14 | 2015-03-19 | Hoya Corporation | Mask blank and method of manufacturing a transfer mask |
| US8974988B2 (en) * | 2012-04-20 | 2015-03-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mask and method for forming the same |
| JP5670502B2 (ja) | 2012-04-30 | 2015-02-18 | 株式会社エスアンドエス テック | 位相反転ブランクマスク及びその製造方法 |
| KR101269062B1 (ko) | 2012-06-29 | 2013-05-29 | 주식회사 에스앤에스텍 | 블랭크 마스크 및 이를 이용한 포토 마스크 제조방법 |
| JP6394496B2 (ja) * | 2014-07-15 | 2018-09-26 | 信越化学工業株式会社 | バイナリフォトマスクブランク、その製造方法、及びバイナリフォトマスクの製造方法 |
| JP6544964B2 (ja) * | 2015-03-31 | 2019-07-17 | Hoya株式会社 | マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法 |
| JP6370255B2 (ja) * | 2015-04-07 | 2018-08-08 | 信越化学工業株式会社 | ペリクル用フレーム及びそれを用いたペリクル |
| DE102016203442A1 (de) * | 2016-03-02 | 2017-09-07 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage und Verfahren zum Vermessen eines Projektionsobjektives |
| JP7009746B2 (ja) * | 2017-02-15 | 2022-01-26 | 大日本印刷株式会社 | Ｈａｚｅの除去方法、及びフォトマスクの製造方法 |
| JP6833773B2 (ja) * | 2018-08-30 | 2021-02-24 | Hoya株式会社 | マスクブランク、転写用マスクおよび半導体デバイスの製造方法 |
| CN113311660B (zh) * | 2021-06-03 | 2023-07-18 | 上海传芯半导体有限公司 | 掩模基版的制作方法及具有等离子体加热装置的涂胶设备 |
| TW202532955A (zh) * | 2023-12-27 | 2025-08-16 | 日商Ｈｏｙａ股份有限公司 | 反射型光罩基底、反射型光罩、及半導體裝置之製造方法 |
| WO2025142703A1 (ja) * | 2023-12-27 | 2025-07-03 | Hoya株式会社 | 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
| CN119065196A (zh) * | 2024-08-12 | 2024-12-03 | 上海华力集成电路制造有限公司 | 解决光罩表面遮光材料析出的方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200623233A (en) * | 2004-09-10 | 2006-07-01 | Shinetsu Chemical Co | Photomask blank and photomask |
| TW200624999A (en) * | 2004-11-08 | 2006-07-16 | Hoya Corp | Method of producing a mask blank |
| JP2007241060A (ja) * | 2006-03-10 | 2007-09-20 | Shin Etsu Chem Co Ltd | フォトマスクブランク及びフォトマスクの製造方法 |
| JP2009230113A (ja) * | 2008-02-27 | 2009-10-08 | Hoya Corp | フォトマスクブランクおよびフォトマスク並びにこれらの製造方法 |
| JP2009230112A (ja) * | 2008-02-27 | 2009-10-08 | Hoya Corp | フォトマスクブランクおよびフォトマスク並びにフォトマスクの製造方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57161857A (en) | 1981-03-31 | 1982-10-05 | Dainippon Printing Co Ltd | Photomask blank plate |
| JP3474274B2 (ja) * | 1994-09-08 | 2003-12-08 | 株式会社東芝 | サーマルヘッド |
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2010
- 2010-09-03 US US12/875,783 patent/US8435704B2/en not_active Expired - Fee Related
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2011
- 2011-02-24 JP JP2011037970A patent/JP5142340B2/ja not_active Expired - Fee Related
- 2011-03-29 DE DE102011006354.4A patent/DE102011006354B4/de not_active Expired - Fee Related
- 2011-03-29 TW TW100110685A patent/TWI514067B/zh active
- 2011-03-29 DE DE102011122937.3A patent/DE102011122937B3/de not_active Expired - Fee Related
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2012
- 2012-06-08 JP JP2012130515A patent/JP5726814B2/ja active Active
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2013
- 2013-07-25 KR KR1020130088262A patent/KR101671052B1/ko not_active Expired - Fee Related
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2015
- 2015-04-01 JP JP2015074812A patent/JP5872721B2/ja active Active
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| TW200623233A (en) * | 2004-09-10 | 2006-07-01 | Shinetsu Chemical Co | Photomask blank and photomask |
| TW200624999A (en) * | 2004-11-08 | 2006-07-16 | Hoya Corp | Method of producing a mask blank |
| JP2007241060A (ja) * | 2006-03-10 | 2007-09-20 | Shin Etsu Chem Co Ltd | フォトマスクブランク及びフォトマスクの製造方法 |
| JP2009230113A (ja) * | 2008-02-27 | 2009-10-08 | Hoya Corp | フォトマスクブランクおよびフォトマスク並びにこれらの製造方法 |
| JP2009230112A (ja) * | 2008-02-27 | 2009-10-08 | Hoya Corp | フォトマスクブランクおよびフォトマスク並びにフォトマスクの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102011006354A1 (de) | 2012-01-12 |
| DE102011006354B4 (de) | 2016-11-10 |
| JP2012190048A (ja) | 2012-10-04 |
| DE102011122937B3 (de) | 2016-11-24 |
| JP5872721B2 (ja) | 2016-03-01 |
| JP2015121827A (ja) | 2015-07-02 |
| KR20130102512A (ko) | 2013-09-17 |
| JP5142340B2 (ja) | 2013-02-13 |
| KR101671052B1 (ko) | 2016-10-31 |
| US8435704B2 (en) | 2013-05-07 |
| JP2011227461A (ja) | 2011-11-10 |
| US20110244373A1 (en) | 2011-10-06 |
| TW201207553A (en) | 2012-02-16 |
| JP5726814B2 (ja) | 2015-06-03 |
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