DE102011089880B4 - Verfahren zum Programmieren eines Speicherblocks eines nichtflüchtigen Speicherelements, nichtflüchtiges Speicherelement und Speichersystem - Google Patents

Verfahren zum Programmieren eines Speicherblocks eines nichtflüchtigen Speicherelements, nichtflüchtiges Speicherelement und Speichersystem Download PDF

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Publication number
DE102011089880B4
DE102011089880B4 DE102011089880.8A DE102011089880A DE102011089880B4 DE 102011089880 B4 DE102011089880 B4 DE 102011089880B4 DE 102011089880 A DE102011089880 A DE 102011089880A DE 102011089880 B4 DE102011089880 B4 DE 102011089880B4
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block
sub
programming
word line
memory
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English (en)
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DE102011089880A1 (de
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Dong Ku Kang
Seung-Bum Kim
Tae Young Kim
Sun-Jun Park
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
DE102011089880.8A 2011-01-04 2011-12-23 Verfahren zum Programmieren eines Speicherblocks eines nichtflüchtigen Speicherelements, nichtflüchtiges Speicherelement und Speichersystem Active DE102011089880B4 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020110000359A KR101703106B1 (ko) 2011-01-04 2011-01-04 부분-이레이즈 동작을 수행할 수 있는 비휘발성 메모리 장치와 상기 비휘발성 메모리 장치를 포함하는 장치들
KR10-2011-0000359 2011-01-04
US13/316,636 US8654580B2 (en) 2011-01-04 2011-12-12 Non-volatile memory devices and systems including the same, and methods of programming non-volatile memory devices
US13/316,636 2011-12-12

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DE102011089880A1 DE102011089880A1 (de) 2012-09-13
DE102011089880B4 true DE102011089880B4 (de) 2022-01-27

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US (1) US8654580B2 (enExample)
JP (1) JP5951253B2 (enExample)
KR (1) KR101703106B1 (enExample)
CN (1) CN102592668B (enExample)
DE (1) DE102011089880B4 (enExample)

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Also Published As

Publication number Publication date
CN102592668A (zh) 2012-07-18
US20120170365A1 (en) 2012-07-05
JP5951253B2 (ja) 2016-07-13
CN102592668B (zh) 2016-09-14
JP2012142074A (ja) 2012-07-26
US8654580B2 (en) 2014-02-18
KR101703106B1 (ko) 2017-02-06
DE102011089880A1 (de) 2012-09-13
KR20120079202A (ko) 2012-07-12

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