DE102011075365B4 - Halbleitervorrichtung und Herstellungsverfahren hierfür - Google Patents

Halbleitervorrichtung und Herstellungsverfahren hierfür Download PDF

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Publication number
DE102011075365B4
DE102011075365B4 DE102011075365.6A DE102011075365A DE102011075365B4 DE 102011075365 B4 DE102011075365 B4 DE 102011075365B4 DE 102011075365 A DE102011075365 A DE 102011075365A DE 102011075365 B4 DE102011075365 B4 DE 102011075365B4
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DE
Germany
Prior art keywords
semiconductor device
layer
electrode pads
substrate
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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DE102011075365.6A
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German (de)
English (en)
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DE102011075365A1 (de
Inventor
Mika Okumura
Yasuo Yamaguchi
Takeshi Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of DE102011075365A1 publication Critical patent/DE102011075365A1/de
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
    • B81B7/0051—Packages or encapsulation for reducing stress inside of the package structure between the package lid and the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00—Details of instruments
    • G01P1/02—Housings
    • G01P1/023—Housings for acceleration measuring devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0154—Moulding a cap over the MEMS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
DE102011075365.6A 2010-06-09 2011-05-05 Halbleitervorrichtung und Herstellungsverfahren hierfür Active DE102011075365B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010131964A JP5540911B2 (ja) 2010-06-09 2010-06-09 半導体装置
JP2010-131964 2010-06-09

Publications (2)

Publication Number Publication Date
DE102011075365A1 DE102011075365A1 (de) 2011-12-15
DE102011075365B4 true DE102011075365B4 (de) 2016-06-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011075365.6A Active DE102011075365B4 (de) 2010-06-09 2011-05-05 Halbleitervorrichtung und Herstellungsverfahren hierfür

Country Status (6)

Country Link
US (1) US8390121B2 (cg-RX-API-DMAC7.html)
JP (1) JP5540911B2 (cg-RX-API-DMAC7.html)
KR (1) KR20110134830A (cg-RX-API-DMAC7.html)
CN (1) CN102280416B (cg-RX-API-DMAC7.html)
DE (1) DE102011075365B4 (cg-RX-API-DMAC7.html)
TW (1) TWI431731B (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013076830A1 (ja) * 2011-11-22 2013-05-30 富士通株式会社 電子部品およびその製造方法
US9025294B2 (en) * 2012-02-24 2015-05-05 Hamilton Sundstrand Corporation System and method for controlling solid state circuit breakers
US9176089B2 (en) 2013-03-29 2015-11-03 Stmicroelectronics Pte Ltd. Integrated multi-sensor module
US9082681B2 (en) 2013-03-29 2015-07-14 Stmicroelectronics Pte Ltd. Adhesive bonding technique for use with capacitive micro-sensors
US9618653B2 (en) 2013-03-29 2017-04-11 Stmicroelectronics Pte Ltd. Microelectronic environmental sensing module
GB2514547A (en) * 2013-05-23 2014-12-03 Melexis Technologies Nv Packaging of semiconductor devices
US9000542B2 (en) 2013-05-31 2015-04-07 Stmicroelectronics Pte Ltd. Suspended membrane device
US10254261B2 (en) 2016-07-18 2019-04-09 Stmicroelectronics Pte Ltd Integrated air quality sensor that detects multiple gas species
US10429330B2 (en) 2016-07-18 2019-10-01 Stmicroelectronics Pte Ltd Gas analyzer that detects gases, humidity, and temperature
US10557812B2 (en) 2016-12-01 2020-02-11 Stmicroelectronics Pte Ltd Gas sensors

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030159513A1 (en) * 2002-02-18 2003-08-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor acceleration sensor
DE10196531B4 (de) * 2001-06-21 2005-06-30 Mitsubishi Denki K.K. Beschleunigungssensor und Herstellungsverfahren dafür
DE102005028704A1 (de) * 2005-06-20 2006-12-28 Infineon Technologies Ag Halbleiterbauteil mit in Kunststoffgehäusemasse eingebetteten Halbleiterbauteilkomponenten
JP2007322271A (ja) * 2006-06-01 2007-12-13 Mitsubishi Electric Corp 慣性力センサ及びその製造方法
JP2008089327A (ja) * 2006-09-29 2008-04-17 Mitsubishi Electric Corp 加速度センサ

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2649157B2 (ja) 1987-03-10 1997-09-03 三菱電機株式会社 半導体装置
JPH06104268A (ja) 1992-09-21 1994-04-15 Mitsubishi Electric Corp ゲッタリング効果を持たせた半導体基板およびその製造方法
JPH06267935A (ja) * 1993-03-12 1994-09-22 Mitsubishi Electric Corp 半導体装置の製造方法
JPH07297560A (ja) 1994-04-28 1995-11-10 Hitachi Ltd 多層プリント配線基板およびその実装構造体
JPH08178768A (ja) * 1994-12-20 1996-07-12 Matsushita Electric Ind Co Ltd 力学量センサ
JPH08316442A (ja) * 1995-05-24 1996-11-29 Mitsubishi Materials Corp Ｓｏｉ基板及びその製造方法
JP3050193B2 (ja) * 1997-11-12 2000-06-12 日本電気株式会社 半導体装置及びその製造方法
US6049365A (en) * 1998-05-07 2000-04-11 Mitsubishi Denki Kabushiki Kaisha Liquid crystal displaying apparatus with a converter not exposed to liquid crystal
JP2001119040A (ja) 1999-10-18 2001-04-27 Denso Corp 半導体力学量センサとその製造方法
KR100725010B1 (ko) 2003-05-26 2007-06-04 가부시키가이샤 무라타 세이사쿠쇼 압전 전자 부품, 및 그 제조방법, 통신기
JP4608993B2 (ja) * 2004-08-06 2011-01-12 ソニー株式会社 微小電気機械素子とその製造方法、及び電子機器
JP2006310508A (ja) 2005-04-28 2006-11-09 Sanyo Electric Co Ltd 半導体装置およびその製造方法
JP4633574B2 (ja) * 2005-08-08 2011-02-16 三菱電機株式会社 薄膜構造体およびその製造方法
JP2007274096A (ja) * 2006-03-30 2007-10-18 Yamaha Corp ダイヤフラム及びその製造方法
KR101004574B1 (ko) * 2006-09-06 2010-12-30 히타치 긴조쿠 가부시키가이샤 반도체 센서 장치 및 그 제조 방법
JP2009016717A (ja) * 2007-07-09 2009-01-22 Mitsubishi Electric Corp 半導体装置およびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10196531B4 (de) * 2001-06-21 2005-06-30 Mitsubishi Denki K.K. Beschleunigungssensor und Herstellungsverfahren dafür
US20030159513A1 (en) * 2002-02-18 2003-08-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor acceleration sensor
DE102005028704A1 (de) * 2005-06-20 2006-12-28 Infineon Technologies Ag Halbleiterbauteil mit in Kunststoffgehäusemasse eingebetteten Halbleiterbauteilkomponenten
JP2007322271A (ja) * 2006-06-01 2007-12-13 Mitsubishi Electric Corp 慣性力センサ及びその製造方法
JP2008089327A (ja) * 2006-09-29 2008-04-17 Mitsubishi Electric Corp 加速度センサ

Also Published As

Publication number Publication date
JP5540911B2 (ja) 2014-07-02
DE102011075365A1 (de) 2011-12-15
US8390121B2 (en) 2013-03-05
US20110303992A1 (en) 2011-12-15
TWI431731B (zh) 2014-03-21
JP2011258751A (ja) 2011-12-22
TW201208009A (en) 2012-02-16
KR20110134830A (ko) 2011-12-15
CN102280416B (zh) 2014-04-09
CN102280416A (zh) 2011-12-14

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Ipc: H10W0074400000