DE102011055714B8 - Verfahren zum Programmieren einer nicht-flüchtigen Speichervorrichtung - Google Patents

Verfahren zum Programmieren einer nicht-flüchtigen Speichervorrichtung Download PDF

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Publication number
DE102011055714B8
DE102011055714B8 DE102011055714.8A DE102011055714A DE102011055714B8 DE 102011055714 B8 DE102011055714 B8 DE 102011055714B8 DE 102011055714 A DE102011055714 A DE 102011055714A DE 102011055714 B8 DE102011055714 B8 DE 102011055714B8
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Prior art keywords
programming
memory device
volatile memory
volatile
memory
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German (de)
English (en)
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DE102011055714A1 (de
DE102011055714B4 (de
Inventor
Joon-Suc JANG
Dong-Hun KWAK
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of DE102011055714B4 publication Critical patent/DE102011055714B4/de
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
DE102011055714.8A 2010-12-30 2011-11-25 Verfahren zum Programmieren einer nicht-flüchtigen Speichervorrichtung Active DE102011055714B8 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100138502A KR101798013B1 (ko) 2010-12-30 2010-12-30 비휘발성 메모리 장치의 프로그램 방법
KR10-2010-0138502 2010-12-30

Publications (3)

Publication Number Publication Date
DE102011055714A1 DE102011055714A1 (de) 2012-07-05
DE102011055714B4 DE102011055714B4 (de) 2018-09-20
DE102011055714B8 true DE102011055714B8 (de) 2018-11-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011055714.8A Active DE102011055714B8 (de) 2010-12-30 2011-11-25 Verfahren zum Programmieren einer nicht-flüchtigen Speichervorrichtung

Country Status (5)

Country Link
US (3) US20120170364A1 (enExample)
JP (1) JP5921870B2 (enExample)
KR (1) KR101798013B1 (enExample)
CN (2) CN102543192B (enExample)
DE (1) DE102011055714B8 (enExample)

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KR102192539B1 (ko) * 2014-05-21 2020-12-18 삼성전자주식회사 반도체 장치 및 이의 프로그램 방법
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KR102309841B1 (ko) * 2015-08-24 2021-10-12 삼성전자주식회사 표면 실장 기술의 적용에 따른 메모리 셀의 문턱 전압 산포 변화 복구 기능을 갖는 데이터 스토리지 및 그것의 동작 방법
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KR102649347B1 (ko) 2016-10-11 2024-03-20 삼성전자주식회사 불휘발성 메모리 장치를 프로그램하는 방법과, 상기 메모리 장치를 포함하는 시스템의 작동 방법
US10217515B2 (en) 2017-04-01 2019-02-26 Intel Corporation Programming memory devices
US10614886B2 (en) * 2017-09-22 2020-04-07 Samsung Electronics Co., Ltd. Nonvolatile memory device and a method of programming the nonvolatile memory device
US10811109B2 (en) * 2018-12-27 2020-10-20 Sandisk Technologies Llc Multi-pass programming process for memory device which omits verify test in first program pass
KR102771470B1 (ko) * 2019-11-05 2025-02-25 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법
KR102781476B1 (ko) * 2019-12-03 2025-03-17 에스케이하이닉스 주식회사 메모리 장치 및 그것의 동작 방법
KR102739970B1 (ko) * 2020-03-17 2024-12-09 에스케이하이닉스 주식회사 메모리 장치 및 이의 동작 방법
KR20230119950A (ko) * 2022-02-08 2023-08-16 삼성전자주식회사 Smt 공정에 최적화된 불휘발성 메모리 장치 및 이의 동작 방법
KR20230137109A (ko) 2022-03-21 2023-10-04 에스케이하이닉스 주식회사 메모리 장치
CN119920285A (zh) * 2023-10-31 2025-05-02 长江存储科技有限责任公司 存储器、存储系统以及存储器的操作方法

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Also Published As

Publication number Publication date
DE102011055714A1 (de) 2012-07-05
US20140247657A1 (en) 2014-09-04
US20120170364A1 (en) 2012-07-05
CN107093453A (zh) 2017-08-25
US9818475B2 (en) 2017-11-14
CN102543192B (zh) 2017-03-01
DE102011055714B4 (de) 2018-09-20
US9281069B2 (en) 2016-03-08
JP2012142067A (ja) 2012-07-26
CN102543192A (zh) 2012-07-04
KR101798013B1 (ko) 2017-11-16
US20160141025A1 (en) 2016-05-19
CN107093453B (zh) 2020-08-18
KR20120076787A (ko) 2012-07-10
JP5921870B2 (ja) 2016-05-24

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