DE102008008867A1 - Halbleitertransistorvorrichtung und Verfahren zum Herstellen derselben - Google Patents

Halbleitertransistorvorrichtung und Verfahren zum Herstellen derselben Download PDF

Info

Publication number
DE102008008867A1
DE102008008867A1 DE102008008867A DE102008008867A DE102008008867A1 DE 102008008867 A1 DE102008008867 A1 DE 102008008867A1 DE 102008008867 A DE102008008867 A DE 102008008867A DE 102008008867 A DE102008008867 A DE 102008008867A DE 102008008867 A1 DE102008008867 A1 DE 102008008867A1
Authority
DE
Germany
Prior art keywords
type
region
doped
lateral
drift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102008008867A
Other languages
German (de)
English (en)
Inventor
Mueng-Ryul Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE102008008867A1 publication Critical patent/DE102008008867A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE102008008867A 2007-02-14 2008-02-13 Halbleitertransistorvorrichtung und Verfahren zum Herstellen derselben Withdrawn DE102008008867A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2007-0015390 2007-02-14
KR1020070015390A KR100847306B1 (ko) 2007-02-14 2007-02-14 반도체 장치 및 이의 제조 방법

Publications (1)

Publication Number Publication Date
DE102008008867A1 true DE102008008867A1 (de) 2008-08-21

Family

ID=39628355

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008008867A Withdrawn DE102008008867A1 (de) 2007-02-14 2008-02-13 Halbleitertransistorvorrichtung und Verfahren zum Herstellen derselben

Country Status (5)

Country Link
US (1) US8058703B2 (https=)
JP (1) JP5294192B2 (https=)
KR (1) KR100847306B1 (https=)
CN (2) CN102938412A (https=)
DE (1) DE102008008867A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI387106B (zh) * 2008-10-16 2013-02-21 Vanguard Int Semiconduct Corp 閘極絕緣雙接面電晶體（ｉｇｂｔ）靜電放電防護元件
TWI503893B (zh) * 2008-12-30 2015-10-11 世界先進積體電路股份有限公司 半導體結構及其製作方法
US8049307B2 (en) 2009-01-23 2011-11-01 Vanguard International Semiconductor Corporation Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices
CN101958344B (zh) * 2009-07-16 2012-03-07 中芯国际集成电路制造(上海)有限公司 绿色场效应晶体管及其制造方法
CN105097903B (zh) * 2009-11-09 2020-07-03 苏州博创集成电路设计有限公司 绝缘体上硅的横向n型绝缘栅双极晶体管
CN201708157U (zh) * 2010-06-30 2011-01-12 四川和芯微电子股份有限公司 结型场效应晶体管结构
US8735937B2 (en) 2012-05-31 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Fully isolated LIGBT and methods for forming the same
US9184275B2 (en) * 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
CN104882476B (zh) * 2015-05-25 2018-09-25 上海先进半导体制造股份有限公司 横向igbt及其制作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070015390A (ko) 2004-03-03 2007-02-02 키모토 컴파니 리미티드 광제어 필름 및 그것을 사용한 백라이트 장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132753A (en) * 1990-03-23 1992-07-21 Siliconix Incorporated Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICs
JPH08227999A (ja) * 1994-12-21 1996-09-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法並びに半導体集積回路及びその製造方法
JP3222380B2 (ja) 1996-04-25 2001-10-29 シャープ株式会社 電界効果トランジスタ、および、ｃｍｏｓトランジスタ
JPH10242456A (ja) * 1997-02-28 1998-09-11 Toshiba Corp 横型絶縁ゲートバイポーラトランジスタ
KR100244282B1 (ko) * 1997-08-25 2000-02-01 김영환 고전압 트랜지스터의 구조 및 제조 방법
US6117738A (en) * 1998-11-20 2000-09-12 United Microelectronics Corp. Method for fabricating a high-bias semiconductor device
JP2000332247A (ja) * 1999-03-15 2000-11-30 Toshiba Corp 半導体装置
US6191453B1 (en) 1999-12-13 2001-02-20 Philips Electronics North America Corporation Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology
JP3831615B2 (ja) * 2001-01-16 2006-10-11 三洋電機株式会社 半導体装置とその製造方法
JP2002270844A (ja) * 2001-03-07 2002-09-20 Toshiba Corp 半導体装置及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070015390A (ko) 2004-03-03 2007-02-02 키모토 컴파니 리미티드 광제어 필름 및 그것을 사용한 백라이트 장치

Also Published As

Publication number Publication date
CN101246901A (zh) 2008-08-20
KR100847306B1 (ko) 2008-07-21
JP5294192B2 (ja) 2013-09-18
JP2008199029A (ja) 2008-08-28
CN102938412A (zh) 2013-02-20
US20080191316A1 (en) 2008-08-14
US8058703B2 (en) 2011-11-15
CN101246901B (zh) 2013-01-02

Similar Documents

Publication Publication Date Title
DE102008008867A1 (de) Halbleitertransistorvorrichtung und Verfahren zum Herstellen derselben
DE3889245T2 (de) Integrierter und kontrollierter Leistungs-MOSFET.
DE102009049774B4 (de) BiCMOS-Schaltungsanordnung
DE102011087845A1 (de) Laterales transistorbauelement und verfahren zu dessen herstellung
DE102008051245A1 (de) Hochvolttransistor mit hoher Stromtragfähigkeit und Verfahren zur Herstellung
DE102016100277A1 (de) Leistungs-mosfets und verfahren zu ihrer herstellung
DE102020209178A1 (de) Planare transistorvorrichtung mit wenigstens einer schicht aus einem zweidimensionalen (2d-) material und verfahren zur herstellung solcher transistorvorrichtungen
DE102014223953A1 (de) FinFET Halbleitervorrichtungen, die vertiefte Source-Drain-Gebiete auf einer unteren Halbleiterschicht umfassen und Verfahren zur Herstellung dieser
DE102007034803A1 (de) Integrierter Hall-Effekt-Sensor
DE2133184A1 (de) Verfahren zum Herstellen von Halbleiterbauteilen
DE202015105413U1 (de) Integrierte, floatende Diodenstruktur
DE102013201076A1 (de) Gestalten einer grenzfläche zum optimieren von metall-iii-v-kontakten
DE10306597B4 (de) Verfahren zum Herstellen einer Halbleiterstruktur mit erhöhter Durchbruchspannung durch tieferliegenden Subkollektorabschnitt
DE102006059113A1 (de) Komplementäre Bipolar-Halbleitervorrichtung
DE3100839A1 (de) Integrierte schaltungsanordnung
DE102009038938B4 (de) Verfahren zur Herstellung eines vertikalen Hall-Sensors
DE10044838C2 (de) Halbleiterbauelement und Verfahren zur Herstellung eines solchen
DE1914745B2 (de) Verfahren zum herstellen eines halbleiterbauelements
DE2527076B2 (de) Integriertes Halbleiterbauelement und Verfahren zu seiner Herstellung
EP0008043A1 (de) Integrierter bipolarer Halbleiterschaltkreis
DE102006012447B4 (de) Verfahren zur Herstellung einer Transistorstruktur
DE102023132763B4 (de) Halbleitervorrichtung
DE102020119781A1 (de) Bipolartransistor mit segmentierten emitterkontakten
DE102011051407B4 (de) Halbleitervorrichtung mit einer Stromaufweitungszone und Verfahren zur Herstellung dieser Halbleitervorrichtung
DE19705351C2 (de) Verfahren zum Herstellen eines Halbleiterkörpers

Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee