DE102007059159A1 - Bildsensor-Baugruppe und Verfahren diese zu bilden - Google Patents
Bildsensor-Baugruppe und Verfahren diese zu bilden Download PDFInfo
- Publication number
- DE102007059159A1 DE102007059159A1 DE102007059159A DE102007059159A DE102007059159A1 DE 102007059159 A1 DE102007059159 A1 DE 102007059159A1 DE 102007059159 A DE102007059159 A DE 102007059159A DE 102007059159 A DE102007059159 A DE 102007059159A DE 102007059159 A1 DE102007059159 A1 DE 102007059159A1
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- Germany
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- chip
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- 239000010410 layer Substances 0.000 claims abstract description 84
- 239000000463 material Substances 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 48
- 239000002184 metal Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000004382 potting Methods 0.000 claims abstract description 15
- 239000011241 protective layer Substances 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims description 34
- 229910045601 alloy Inorganic materials 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 11
- 239000004593 Epoxy Substances 0.000 claims description 10
- 238000001459 lithography Methods 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 229910000833 kovar Inorganic materials 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229920002379 silicone rubber Polymers 0.000 claims description 5
- 239000004945 silicone rubber Substances 0.000 claims description 5
- 229910001020 Au alloy Inorganic materials 0.000 claims description 4
- 238000005553 drilling Methods 0.000 claims description 4
- 238000004070 electrodeposition Methods 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- 229910001080 W alloy Inorganic materials 0.000 claims description 3
- 229920002313 fluoropolymer Polymers 0.000 claims description 3
- 239000004811 fluoropolymer Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000003353 gold alloy Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 12
- 239000002245 particle Substances 0.000 description 9
- 238000002513 implantation Methods 0.000 description 8
- 238000011109 contamination Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000013013 elastic material Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 239000005749 Copper compound Substances 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017813 Cu—Cr Inorganic materials 0.000 description 1
- 229910017827 Cu—Fe Inorganic materials 0.000 description 1
- 229910017876 Cu—Ni—Si Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 150000001880 copper compounds Chemical class 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/608,266 | 2006-12-08 | ||
| US11/608,266 US20080136012A1 (en) | 2006-12-08 | 2006-12-08 | Imagine sensor package and forming method of the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102007059159A1 true DE102007059159A1 (de) | 2008-08-21 |
Family
ID=39497005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102007059159A Withdrawn DE102007059159A1 (de) | 2006-12-08 | 2007-12-06 | Bildsensor-Baugruppe und Verfahren diese zu bilden |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20080136012A1 (ja) |
| JP (1) | JP2008205429A (ja) |
| KR (1) | KR20080053240A (ja) |
| CN (1) | CN101197384A (ja) |
| DE (1) | DE102007059159A1 (ja) |
| SG (1) | SG143242A1 (ja) |
| TW (1) | TW200826271A (ja) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7886609B2 (en) * | 2009-05-06 | 2011-02-15 | Freescale Semiconductor, Inc. | Pressure sensor package |
| EP2506302B1 (en) | 2009-11-26 | 2021-08-11 | Kyocera Corporation | Wiring substrate, imaging device and imaging device module |
| WO2012002378A1 (ja) * | 2010-06-28 | 2012-01-05 | 京セラ株式会社 | 配線基板および撮像装置ならびに撮像装置モジュール |
| US8604576B2 (en) * | 2011-07-19 | 2013-12-10 | Opitz, Inc. | Low stress cavity package for back side illuminated image sensor, and method of making same |
| KR102055563B1 (ko) | 2012-12-06 | 2019-12-13 | 삼성전자주식회사 | 이미지 센서 패키지 |
| TWI544611B (zh) * | 2013-04-01 | 2016-08-01 | 財團法人工業技術研究院 | 背照式光感測元件封裝體 |
| CN104576552A (zh) * | 2013-10-15 | 2015-04-29 | 林登炎 | 芯片封装结构及制程 |
| WO2016090586A1 (zh) * | 2014-12-11 | 2016-06-16 | 李林涛 | Pcb板工艺边框结构 |
| KR101689703B1 (ko) * | 2015-01-23 | 2016-12-27 | 옵토팩 주식회사 | 포토 센서 패키지 모듈 |
| CN107818274A (zh) * | 2016-09-14 | 2018-03-20 | 手持产品公司 | 堆叠式pcb可回流焊解码器模块 |
| CN108701208B (zh) * | 2016-11-07 | 2022-05-06 | 深圳市汇顶科技股份有限公司 | 指纹识别模组及指纹识别芯片封装结构 |
| CN109698208B (zh) * | 2017-10-20 | 2023-06-30 | 新加坡有限公司 | 图像传感器的封装方法、图像传感器封装结构和镜头模组 |
| US11178764B2 (en) * | 2018-01-15 | 2021-11-16 | Pi-Crystal Incorporation | Flexible substrate, electronic device, and method for manufacturing electronic device |
| CN109585575A (zh) * | 2018-11-28 | 2019-04-05 | 深圳市兴森快捷电路科技股份有限公司 | 一种基于陶瓷载板的光电电路封装装置 |
| US20210314468A1 (en) * | 2020-04-03 | 2021-10-07 | Facebook Technologies, Llc | Small Camera with Molding Compound |
| CN112549431B (zh) * | 2020-11-13 | 2023-07-21 | 深圳先进技术研究院 | 一种用于液体产生装置中的嵌套结构的制备方法 |
| CN113423173B (zh) * | 2021-05-29 | 2023-09-29 | 华为技术有限公司 | 电子元件封装体、电子元件封装组件及电子设备 |
| CN113705757B (zh) * | 2021-08-30 | 2022-05-31 | 杭州中芯微科技有限公司 | 一种rfid用滤波器基板处理装置 |
| CN217983318U (zh) * | 2022-09-14 | 2022-12-06 | 北京市九州风神科技股份有限公司 | 芯片封装的辅助结构 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5514888A (en) | 1992-05-22 | 1996-05-07 | Matsushita Electronics Corp. | On-chip screen type solid state image sensor and manufacturing method thereof |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5168126A (en) * | 1989-08-25 | 1992-12-01 | Kyocera Corporation | Container package for semiconductor element |
| EP0515849A3 (en) * | 1991-04-27 | 1993-05-19 | Kanegafuchi Chemical Industry Co., Ltd. | Image sensor |
| US5625232A (en) * | 1994-07-15 | 1997-04-29 | Texas Instruments Incorporated | Reliability of metal leads in high speed LSI semiconductors using dummy vias |
| US6490161B1 (en) * | 2002-01-08 | 2002-12-03 | International Business Machines Corporation | Peripheral land grid array package with improved thermal performance |
| US20040038442A1 (en) * | 2002-08-26 | 2004-02-26 | Kinsman Larry D. | Optically interactive device packages and methods of assembly |
| JP3990347B2 (ja) * | 2003-12-04 | 2007-10-10 | ローム株式会社 | 半導体チップおよびその製造方法、ならびに半導体装置 |
| JP4307284B2 (ja) * | 2004-02-17 | 2009-08-05 | 三洋電機株式会社 | 半導体装置の製造方法 |
| US7061106B2 (en) * | 2004-04-28 | 2006-06-13 | Advanced Chip Engineering Technology Inc. | Structure of image sensor module and a method for manufacturing of wafer level package |
| JP4271625B2 (ja) * | 2004-06-30 | 2009-06-03 | 株式会社フジクラ | 半導体パッケージ及びその製造方法 |
| US7288757B2 (en) * | 2005-09-01 | 2007-10-30 | Micron Technology, Inc. | Microelectronic imaging devices and associated methods for attaching transmissive elements |
| JP4951989B2 (ja) * | 2006-02-09 | 2012-06-13 | 富士通セミコンダクター株式会社 | 半導体装置 |
| US7531443B2 (en) * | 2006-12-08 | 2009-05-12 | Micron Technology, Inc. | Method and system for fabricating semiconductor components with through interconnects and back side redistribution conductors |
-
2006
- 2006-12-08 US US11/608,266 patent/US20080136012A1/en not_active Abandoned
-
2007
- 2007-11-12 TW TW096142760A patent/TW200826271A/zh unknown
- 2007-12-06 DE DE102007059159A patent/DE102007059159A1/de not_active Withdrawn
- 2007-12-07 CN CNA2007101865333A patent/CN101197384A/zh active Pending
- 2007-12-07 JP JP2007316498A patent/JP2008205429A/ja not_active Withdrawn
- 2007-12-10 SG SG200718519-2A patent/SG143242A1/en unknown
- 2007-12-10 KR KR1020070127721A patent/KR20080053240A/ko not_active Application Discontinuation
-
2008
- 2008-05-08 US US12/117,087 patent/US7863105B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5514888A (en) | 1992-05-22 | 1996-05-07 | Matsushita Electronics Corp. | On-chip screen type solid state image sensor and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200826271A (en) | 2008-06-16 |
| US20080206918A1 (en) | 2008-08-28 |
| SG143242A1 (en) | 2008-06-27 |
| KR20080053240A (ko) | 2008-06-12 |
| US7863105B2 (en) | 2011-01-04 |
| CN101197384A (zh) | 2008-06-11 |
| US20080136012A1 (en) | 2008-06-12 |
| JP2008205429A (ja) | 2008-09-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8139 | Disposal/non-payment of the annual fee |