DE102007042943A1 - Metallalkoxidverbindung, Material zum Bilden eines dünnen Films, und Verfahren zum Herstellen eines dünnen Films - Google Patents

Metallalkoxidverbindung, Material zum Bilden eines dünnen Films, und Verfahren zum Herstellen eines dünnen Films Download PDF

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Publication number
DE102007042943A1
DE102007042943A1 DE102007042943A DE102007042943A DE102007042943A1 DE 102007042943 A1 DE102007042943 A1 DE 102007042943A1 DE 102007042943 A DE102007042943 A DE 102007042943A DE 102007042943 A DE102007042943 A DE 102007042943A DE 102007042943 A1 DE102007042943 A1 DE 102007042943A1
Authority
DE
Germany
Prior art keywords
thin film
compound
metal alkoxide
zirconium
hafnium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102007042943A
Other languages
German (de)
English (en)
Inventor
Senji Wada
Tetsuji Abe
Atsushi Nagareyama Sakurai
Takashi Higashino
Ryusaku Fujimoto
Masako Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Adeka Corp
Original Assignee
Adeka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adeka Corp filed Critical Adeka Corp
Publication of DE102007042943A1 publication Critical patent/DE102007042943A1/de
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/28—Titanium compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic Table without C-Metal linkages

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE102007042943A 2006-09-15 2007-09-10 Metallalkoxidverbindung, Material zum Bilden eines dünnen Films, und Verfahren zum Herstellen eines dünnen Films Withdrawn DE102007042943A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006-251575 2006-09-15
JP2006251575A JP5121196B2 (ja) 2006-09-15 2006-09-15 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法

Publications (1)

Publication Number Publication Date
DE102007042943A1 true DE102007042943A1 (de) 2008-03-27

Family

ID=39105366

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102007042943A Withdrawn DE102007042943A1 (de) 2006-09-15 2007-09-10 Metallalkoxidverbindung, Material zum Bilden eines dünnen Films, und Verfahren zum Herstellen eines dünnen Films

Country Status (6)

Country Link
US (1) US8003814B2 (https=)
JP (1) JP5121196B2 (https=)
KR (1) KR101437663B1 (https=)
CN (1) CN101143873B (https=)
DE (1) DE102007042943A1 (https=)
TW (1) TWI383990B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219292A (ja) * 2009-03-17 2010-09-30 Tokyo Electron Ltd 成膜方法
US8697486B2 (en) * 2009-04-15 2014-04-15 Micro Technology, Inc. Methods of forming phase change materials and methods of forming phase change memory circuitry
DE102009028802B3 (de) * 2009-08-21 2011-03-24 Evonik Degussa Gmbh Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung
US20130011579A1 (en) 2010-11-30 2013-01-10 Air Products And Chemicals, Inc. Metal-Enolate Precursors For Depositing Metal-Containing Films
JP5923351B2 (ja) * 2012-03-16 2016-05-24 株式会社Adeka 銅膜形成用組成物及び該組成物を用いた銅膜の製造方法
KR102251989B1 (ko) 2014-03-10 2021-05-14 삼성전자주식회사 유기 금속 전구체 및 이를 이용한 박막 형성 방법
CN116529416A (zh) * 2020-11-19 2023-08-01 株式会社Adeka 薄膜的制造方法
CN117004923A (zh) * 2022-04-29 2023-11-07 拓荆科技股份有限公司 半导体处理装置
CN117026207A (zh) * 2022-05-10 2023-11-10 株式会社Egtm 铝前驱体及其制造方法、薄层及存储装置制造方法
JP2025102051A (ja) * 2023-12-26 2025-07-08 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、パターン形成方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1954268A (en) * 1930-08-05 1934-04-10 Ternstedt Mfg Co Weather strip window sash channel
US2684972A (en) * 1952-02-21 1954-07-27 Du Pont Production of inorganic esters
GB860353A (en) * 1957-06-20 1961-02-01 Du Pont Improvements in polymerisation of ethylene
JPS60258132A (ja) * 1984-06-04 1985-12-20 Hokko Chem Ind Co Ltd 金属アルコキシドの改良製造法
JPH01172390A (ja) * 1987-12-28 1989-07-07 Hokko Chem Ind Co Ltd 金属アルコキシドの製造方法
JPH01179239A (ja) * 1987-12-29 1989-07-17 Matsushita Electric Ind Co Ltd 光磁気記録媒体の製造方法
JPH05239650A (ja) 1992-02-27 1993-09-17 Kojundo Chem Lab Co Ltd シリコン酸化膜の製造法
JPH0660406A (ja) 1992-08-06 1994-03-04 Matsushita Electric Ind Co Ltd 対物レンズ駆動装置
KR0156980B1 (ko) 1995-06-23 1998-12-01 신현주 질화금속 박막증착용 화합물 및 그를 이용한 증착방법
JP4868639B2 (ja) 2000-06-12 2012-02-01 株式会社Ａｄｅｋａ 化学気相成長用原料及びこれを用いた薄膜の製造方法
JP4693970B2 (ja) 2000-09-14 2011-06-01 株式会社トリケミカル研究所 ゲート酸化膜形成方法
JP3409290B2 (ja) 2000-09-18 2003-05-26 株式会社トリケミカル研究所 ゲート酸化膜形成材料
CN1898192A (zh) * 2003-12-25 2007-01-17 株式会社艾迪科 金属化合物、薄膜形成用原料及薄膜的制造方法
DE112005000134T5 (de) * 2004-02-18 2007-02-15 Adeka Corp. Alkoxidverbindung, Material für die Bildung eines dünnen Films und Verfahren für die Bildung eines dünnen Films
JP2005340405A (ja) * 2004-05-26 2005-12-08 Asahi Denka Kogyo Kk 化学気相成長用原料及び薄膜の製造方法
JP2006182709A (ja) 2004-12-28 2006-07-13 Adeka Corp 薄膜形成用原料、薄膜の製造方法及び金属化合物

Also Published As

Publication number Publication date
TWI383990B (zh) 2013-02-01
CN101143873B (zh) 2012-07-25
US20080187662A1 (en) 2008-08-07
KR20080025301A (ko) 2008-03-20
JP5121196B2 (ja) 2013-01-16
CN101143873A (zh) 2008-03-19
JP2008069135A (ja) 2008-03-27
US8003814B2 (en) 2011-08-23
TW200833701A (en) 2008-08-16
KR101437663B1 (ko) 2014-09-04

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Effective date: 20140724