JP5121196B2 - 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法 - Google Patents
金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法 Download PDFInfo
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- JP5121196B2 JP5121196B2 JP2006251575A JP2006251575A JP5121196B2 JP 5121196 B2 JP5121196 B2 JP 5121196B2 JP 2006251575 A JP2006251575 A JP 2006251575A JP 2006251575 A JP2006251575 A JP 2006251575A JP 5121196 B2 JP5121196 B2 JP 5121196B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- raw material
- metal alkoxide
- compound
- alkoxide compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/28—Titanium compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F17/00—Metallocenes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic Table without C-Metal linkages
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006251575A JP5121196B2 (ja) | 2006-09-15 | 2006-09-15 | 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法 |
| TW096128292A TWI383990B (zh) | 2006-09-15 | 2007-08-01 | Metal alkoxides, film forming materials and films |
| KR1020070086619A KR101437663B1 (ko) | 2006-09-15 | 2007-08-28 | 금속 알콕시드 화합물, 박막 형성용 원료 및 박막의제조방법 |
| DE102007042943A DE102007042943A1 (de) | 2006-09-15 | 2007-09-10 | Metallalkoxidverbindung, Material zum Bilden eines dünnen Films, und Verfahren zum Herstellen eines dünnen Films |
| US11/854,109 US8003814B2 (en) | 2006-09-15 | 2007-09-12 | Metal alkoxide compound, material for forming thin film, and method for producing thin film |
| CN2007101527093A CN101143873B (zh) | 2006-09-15 | 2007-09-14 | 金属醇盐化合物、薄膜形成用原料及薄膜制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006251575A JP5121196B2 (ja) | 2006-09-15 | 2006-09-15 | 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008069135A JP2008069135A (ja) | 2008-03-27 |
| JP2008069135A5 JP2008069135A5 (https=) | 2009-10-15 |
| JP5121196B2 true JP5121196B2 (ja) | 2013-01-16 |
Family
ID=39105366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006251575A Active JP5121196B2 (ja) | 2006-09-15 | 2006-09-15 | 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8003814B2 (https=) |
| JP (1) | JP5121196B2 (https=) |
| KR (1) | KR101437663B1 (https=) |
| CN (1) | CN101143873B (https=) |
| DE (1) | DE102007042943A1 (https=) |
| TW (1) | TWI383990B (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010219292A (ja) * | 2009-03-17 | 2010-09-30 | Tokyo Electron Ltd | 成膜方法 |
| US8697486B2 (en) * | 2009-04-15 | 2014-04-15 | Micro Technology, Inc. | Methods of forming phase change materials and methods of forming phase change memory circuitry |
| DE102009028802B3 (de) * | 2009-08-21 | 2011-03-24 | Evonik Degussa Gmbh | Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung |
| US20130011579A1 (en) | 2010-11-30 | 2013-01-10 | Air Products And Chemicals, Inc. | Metal-Enolate Precursors For Depositing Metal-Containing Films |
| JP5923351B2 (ja) * | 2012-03-16 | 2016-05-24 | 株式会社Adeka | 銅膜形成用組成物及び該組成物を用いた銅膜の製造方法 |
| KR102251989B1 (ko) | 2014-03-10 | 2021-05-14 | 삼성전자주식회사 | 유기 금속 전구체 및 이를 이용한 박막 형성 방법 |
| CN116529416A (zh) * | 2020-11-19 | 2023-08-01 | 株式会社Adeka | 薄膜的制造方法 |
| CN117004923A (zh) * | 2022-04-29 | 2023-11-07 | 拓荆科技股份有限公司 | 半导体处理装置 |
| CN117026207A (zh) * | 2022-05-10 | 2023-11-10 | 株式会社Egtm | 铝前驱体及其制造方法、薄层及存储装置制造方法 |
| JP2025102051A (ja) * | 2023-12-26 | 2025-07-08 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、パターン形成方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1954268A (en) * | 1930-08-05 | 1934-04-10 | Ternstedt Mfg Co | Weather strip window sash channel |
| US2684972A (en) * | 1952-02-21 | 1954-07-27 | Du Pont | Production of inorganic esters |
| GB860353A (en) * | 1957-06-20 | 1961-02-01 | Du Pont | Improvements in polymerisation of ethylene |
| JPS60258132A (ja) * | 1984-06-04 | 1985-12-20 | Hokko Chem Ind Co Ltd | 金属アルコキシドの改良製造法 |
| JPH01172390A (ja) * | 1987-12-28 | 1989-07-07 | Hokko Chem Ind Co Ltd | 金属アルコキシドの製造方法 |
| JPH01179239A (ja) * | 1987-12-29 | 1989-07-17 | Matsushita Electric Ind Co Ltd | 光磁気記録媒体の製造方法 |
| JPH05239650A (ja) | 1992-02-27 | 1993-09-17 | Kojundo Chem Lab Co Ltd | シリコン酸化膜の製造法 |
| JPH0660406A (ja) | 1992-08-06 | 1994-03-04 | Matsushita Electric Ind Co Ltd | 対物レンズ駆動装置 |
| KR0156980B1 (ko) | 1995-06-23 | 1998-12-01 | 신현주 | 질화금속 박막증착용 화합물 및 그를 이용한 증착방법 |
| JP4868639B2 (ja) | 2000-06-12 | 2012-02-01 | 株式会社Adeka | 化学気相成長用原料及びこれを用いた薄膜の製造方法 |
| JP4693970B2 (ja) | 2000-09-14 | 2011-06-01 | 株式会社トリケミカル研究所 | ゲート酸化膜形成方法 |
| JP3409290B2 (ja) | 2000-09-18 | 2003-05-26 | 株式会社トリケミカル研究所 | ゲート酸化膜形成材料 |
| CN1898192A (zh) * | 2003-12-25 | 2007-01-17 | 株式会社艾迪科 | 金属化合物、薄膜形成用原料及薄膜的制造方法 |
| DE112005000134T5 (de) * | 2004-02-18 | 2007-02-15 | Adeka Corp. | Alkoxidverbindung, Material für die Bildung eines dünnen Films und Verfahren für die Bildung eines dünnen Films |
| JP2005340405A (ja) * | 2004-05-26 | 2005-12-08 | Asahi Denka Kogyo Kk | 化学気相成長用原料及び薄膜の製造方法 |
| JP2006182709A (ja) | 2004-12-28 | 2006-07-13 | Adeka Corp | 薄膜形成用原料、薄膜の製造方法及び金属化合物 |
-
2006
- 2006-09-15 JP JP2006251575A patent/JP5121196B2/ja active Active
-
2007
- 2007-08-01 TW TW096128292A patent/TWI383990B/zh active
- 2007-08-28 KR KR1020070086619A patent/KR101437663B1/ko active Active
- 2007-09-10 DE DE102007042943A patent/DE102007042943A1/de not_active Withdrawn
- 2007-09-12 US US11/854,109 patent/US8003814B2/en active Active
- 2007-09-14 CN CN2007101527093A patent/CN101143873B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI383990B (zh) | 2013-02-01 |
| CN101143873B (zh) | 2012-07-25 |
| US20080187662A1 (en) | 2008-08-07 |
| DE102007042943A1 (de) | 2008-03-27 |
| KR20080025301A (ko) | 2008-03-20 |
| CN101143873A (zh) | 2008-03-19 |
| JP2008069135A (ja) | 2008-03-27 |
| US8003814B2 (en) | 2011-08-23 |
| TW200833701A (en) | 2008-08-16 |
| KR101437663B1 (ko) | 2014-09-04 |
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