JP2008069135A - 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法 - Google Patents
金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法 Download PDFInfo
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- JP2008069135A JP2008069135A JP2006251575A JP2006251575A JP2008069135A JP 2008069135 A JP2008069135 A JP 2008069135A JP 2006251575 A JP2006251575 A JP 2006251575A JP 2006251575 A JP2006251575 A JP 2006251575A JP 2008069135 A JP2008069135 A JP 2008069135A
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- Prior art keywords
- thin film
- metal alkoxide
- raw material
- alkoxide compound
- compound
- Prior art date
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- 239000002994 raw material Substances 0.000 title claims abstract description 50
- -1 alkoxide compound Chemical class 0.000 title claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 44
- 239000002184 metal Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 230000008016 vaporization Effects 0.000 claims abstract description 19
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 14
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 13
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 11
- 239000010936 titanium Substances 0.000 claims abstract description 11
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 38
- 238000006243 chemical reaction Methods 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 238000006864 oxidative decomposition reaction Methods 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 239000002243 precursor Substances 0.000 abstract description 23
- 238000009834 vaporization Methods 0.000 abstract description 13
- 238000000354 decomposition reaction Methods 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 3
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 description 45
- 238000005229 chemical vapour deposition Methods 0.000 description 34
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- 239000010408 film Substances 0.000 description 19
- 239000007788 liquid Substances 0.000 description 18
- 239000000203 mixture Substances 0.000 description 15
- 238000000151 deposition Methods 0.000 description 14
- 230000008021 deposition Effects 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 9
- 150000002736 metal compounds Chemical class 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 239000003960 organic solvent Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000004455 differential thermal analysis Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 229910001928 zirconium oxide Inorganic materials 0.000 description 7
- 238000005160 1H NMR spectroscopy Methods 0.000 description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 6
- 150000004703 alkoxides Chemical class 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- NPEOKFBCHNGLJD-UHFFFAOYSA-N ethyl(methyl)azanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C NPEOKFBCHNGLJD-UHFFFAOYSA-N 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 5
- HNVRRHSXBLFLIG-UHFFFAOYSA-N 3-hydroxy-3-methylbut-1-ene Chemical compound CC(C)(O)C=C HNVRRHSXBLFLIG-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 238000009530 blood pressure measurement Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000000921 elemental analysis Methods 0.000 description 4
- SRLSISLWUNZOOB-UHFFFAOYSA-N ethyl(methyl)azanide;zirconium(4+) Chemical compound [Zr+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C SRLSISLWUNZOOB-UHFFFAOYSA-N 0.000 description 4
- BGGIUGXMWNKMCP-UHFFFAOYSA-N 2-methylpropan-2-olate;zirconium(4+) Chemical compound CC(C)(C)O[Zr](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C BGGIUGXMWNKMCP-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 3
- WZVIPWQGBBCHJP-UHFFFAOYSA-N hafnium(4+);2-methylpropan-2-olate Chemical compound [Hf+4].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-] WZVIPWQGBBCHJP-UHFFFAOYSA-N 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000000197 pyrolysis Methods 0.000 description 3
- 235000015067 sauces Nutrition 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 3
- QEGNUYASOUJEHD-UHFFFAOYSA-N 1,1-dimethylcyclohexane Chemical compound CC1(C)CCCCC1 QEGNUYASOUJEHD-UHFFFAOYSA-N 0.000 description 2
- PAMIQIKDUOTOBW-UHFFFAOYSA-N 1-methylpiperidine Chemical compound CN1CCCCC1 PAMIQIKDUOTOBW-UHFFFAOYSA-N 0.000 description 2
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 2
- BZAZNULYLRVMSW-UHFFFAOYSA-N 2-Methyl-2-buten-3-ol Natural products CC(C)=C(C)O BZAZNULYLRVMSW-UHFFFAOYSA-N 0.000 description 2
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 125000003342 alkenyl group Chemical group 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012434 nucleophilic reagent Substances 0.000 description 2
- 239000013110 organic ligand Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 2
- BGYBONWLWSMGNV-UHFFFAOYSA-N 1,4,7,10,13,16,19,22-octaoxacyclotetracosane Chemical compound C1COCCOCCOCCOCCOCCOCCOCCO1 BGYBONWLWSMGNV-UHFFFAOYSA-N 0.000 description 1
- QBPPRVHXOZRESW-UHFFFAOYSA-N 1,4,7,10-tetraazacyclododecane Chemical compound C1CNCCNCCNCCN1 QBPPRVHXOZRESW-UHFFFAOYSA-N 0.000 description 1
- MDAXKAUIABOHTD-UHFFFAOYSA-N 1,4,8,11-tetraazacyclotetradecane Chemical compound C1CNCCNCCCNCCNC1 MDAXKAUIABOHTD-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
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- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- YRAJNWYBUCUFBD-UHFFFAOYSA-N 2,2,6,6-tetramethylheptane-3,5-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(C)(C)C YRAJNWYBUCUFBD-UHFFFAOYSA-N 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 1
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- VGVHNLRUAMRIEW-UHFFFAOYSA-N 4-methylcyclohexan-1-one Chemical compound CC1CCC(=O)CC1 VGVHNLRUAMRIEW-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- FWDQDBTTXSRLHJ-UHFFFAOYSA-N C(C)N(C)[Zr] Chemical compound C(C)N(C)[Zr] FWDQDBTTXSRLHJ-UHFFFAOYSA-N 0.000 description 1
- YSRIXPUVPRLSLD-UHFFFAOYSA-N CC(C)(C)[Hf](C(C)(C)C)(C(C)(C)C)C(C)(C)C Chemical compound CC(C)(C)[Hf](C(C)(C)C)(C(C)(C)C)C(C)(C)C YSRIXPUVPRLSLD-UHFFFAOYSA-N 0.000 description 1
- XMCLMNFEMXIZBF-UHFFFAOYSA-N CC(C)(C)[Zr](C(C)(C)C)(C(C)(C)C)C(C)(C)C Chemical compound CC(C)(C)[Zr](C(C)(C)C)(C(C)(C)C)C(C)(C)C XMCLMNFEMXIZBF-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
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- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 1
- AHVYPIQETPWLSZ-UHFFFAOYSA-N N-methyl-pyrrolidine Natural products CN1CC=CC1 AHVYPIQETPWLSZ-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- RFFFKMOABOFIDF-UHFFFAOYSA-N Pentanenitrile Chemical compound CCCCC#N RFFFKMOABOFIDF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/28—Titanium compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F17/00—Metallocenes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
-
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Abstract
Description
また、本発明は、上記薄膜形成用原料を気化させて得た金属アルコキシド化合物を含有する蒸気を基体上に導入し、これを分解及び/又は化学反応させて基体上に薄膜を形成する薄膜の製造方法を提供することにより上記目的を達成したものである。
また、本発明は、上記薄膜の製造方法を用いて基体上に形成された薄膜を提供することにより上記目的を達成したものである。
従って、上記金属化合物は、ALD法を含むCVD法等の気化工程を有する薄膜製造方法のプレカーサとして特に好適なものである。
気体輸送法の場合は、上記一般式(1)で表される金属アルコキシド化合物そのものがCVD用原料となり、液体輸送法の場合は、上記一般式(1)で表される金属アルコキシド化合物そのもの又は該金属アルコキシド化合物を有機溶剤に溶かした溶液がCVD用原料となる。
特に、本発明の金属アルコキシド化合物に由来する金属酸化物を含有する薄膜を製造する場合には、反応性ガスとして、上記の酸化性のもの、特に酸素及び/又はオゾンを含む反応性ガスが好ましく用いられる。
乾燥アルゴンガス雰囲気下で、反応フラスコに四塩化ジルコニウム0.272モル、乾燥ヘキサン200mlを仕込み、液温が−10℃を超えないように冷却しながらジエチルアミン1.20モルを乾燥ヘキサン150mlに溶解した溶液を滴下し、−10℃で、3時間攪拌した。これに2−メチル−3−ブテン−2−オール125mlと乾燥ヘキサン100mlの混合物を液温が−10℃を超えないように冷却しながら滴下し、室温で18時間攪拌し、さらに50℃で5時間攪拌した。得られた反応液から固相を濾別して得た濾液を濃縮し、減圧蒸留を行った。0.17〜0.18torr、蒸気温度83〜95℃のフラクションから無色透明液体を得た。得られた無色透明液体は、目的物である化合物No.9(収率54.6%)と同定された。化合物No.9の同定は、元素分析及び1H−NMRにより行った。また、得られた化合物No.9について以下の蒸気圧測定を行った。それらの結果を以下に示す。
Zr;20.8質量%(理論値21.13質量%)
(2)1H−NMR(溶媒:重ベンゼン)
図1にチャートを示す。
(3)蒸気圧測定
系を一定の圧力に固定して液面付近の蒸気温度を測定する方法により行った。系の圧力を変えて蒸気温度を4点測定し、クラジウス―クラペイロンプロットにより、蒸気圧の式を得た。
LogP(Torr)=6.01−2308/T(K)
乾燥アルゴンガス雰囲気下で、反応フラスコに四塩化ジルコニウム0.136モル、乾燥ヘキサン455mlを仕込み、液温が−10℃を超えないように冷却しながらジエチルアミン0.60モルを乾燥ヘキサン150mlに溶解した溶液を滴下し、−10℃で、3時間攪拌した。これに2−メチル−3−ブテン−2−オール62.5mlと乾燥ヘキサン50mlの混合物を液温が−10℃を超えないように冷却しながら滴下し、室温で12時間攪拌し、さらに50℃で5時間攪拌した。得られた反応液から固相を濾別して得た濾液を濃縮し、減圧蒸留を行った。0.11〜0.12torr、蒸気温度80〜79℃のフラクションから無色透明液体を得た。得られた無色透明液体は、目的物である化合物No.15(収率35.4%)と同定された。化合物No.15の同定は、元素分析及び1H−NMRにより行った。また、得られた化合物No.15について以下の蒸気圧測定を行った。それらの結果を以下に示す。
Hf;33.9質量%(理論値34.39%)
(2)1H−NMR(溶媒:重ベンゼン)
図2にチャートを示す。
(3)蒸気圧測定
系を一定の圧力に固定して液面付近の蒸気温度を測定する方法により行った。系の圧力を変えて蒸気温度を5点測定し、クラジウス―クラペイロンプロットにより、蒸気圧の式を得た。
LogP(Torr)=6.83−2641/T(K)
上記実施例1で得られた化合物No.9、上記実施例2で得られた化合物No.15、及び比較化合物として、テトラキス(エチルメチルアミノ)ジルコニウム、テトラキス(第3ブトキシ)ジルコニウム、テトラキス(エチルメチルアミノ)ハフニウム、テトラキス(第3ブトキシ)ハフニウムについて、熱安定性の評価を行った。評価は、それぞれの化合物をアルゴン封止して160℃、180℃、200℃で1時間保管した後、30℃から10℃/分の昇温速度、乾燥アルゴン(100ml/分)気流下の測定条件による示差熱分析(TG)を行い、400℃の残渣の質量%の比較により行った。測定結果を下記表1及び表2に示す。
上記実施例で得られた化合物No.9及び化合物No.15、比較化合物として、テトラキス(エチルメチルアミノ)ジルコニウム、テトラキス(第3ブトキシ)ジルコニウム、テトラキス(エチルメチルアミノ)ハフニウム及びテトラキス(第3ブトキシ)ハフニウムについて、熱酸化分解性の評価を行った。熱酸化分解性の評価は、30℃から、10℃/分の昇温速度、乾燥酸素(100ml/分)気流下の測定条件による示差熱分析(DTA)を行った。分析結果を図3及び図4に示す。
また、テトラキスアルコキシド化合物である、テトラキス(第3ブトキシ)ジルコニウム及びテトラキス(第3ブトキシ)ハフニウムは、熱的に安定であるが、酸化分解に対しても安定であり、金属酸化物を含有する薄膜のプレカーサとしては、生産性に劣ることが示唆された。
本発明の金属アルコキシド化合物である化合物No.9及び化合物No.15は、熱的には、少なくとも180℃までは安定であり、酸化分解も215℃から始まるので金属酸化物の薄膜製造をコントロールすることが容易で生産性にも優れることが示唆された。
上記実施例1で得られた化合物No.9を用いて〔図5〕に示すCVD装置により、以下の条件及び工程でシリコンウエハ上に酸化ジルコニウム薄膜を製造した。得られた薄膜について、蛍光X線により膜厚測定、薄膜組成の確認を行ったところ、膜厚は10nmであり、膜組成は酸化ジルコニウムであった。
(条件)
反応温度(基板温度);280℃、反応性ガス;オゾン
(工程)
下記(1)〜(4)からなる一連の工程を1サイクルとして、7サイクル繰り返し、最後に600℃で3分間アニール処理を行った。
(1)気化室温度:170℃、気化室圧力700〜800Paの条件で気化 させた化合物No.9の蒸気を導入し、系圧700 〜800Paで1 秒間堆積させる。
(2)2秒間のアルゴンパージにより、未反応原料を除去する。
(3)反応性ガスを導入し、系圧力700〜800Paで1秒間反応させる。
(4)2秒間のアルゴンパージにより、未反応原料を除去する。
水分量を1ppm未満に脱水したエチルシクロヘキサンを用いて、化合物No.9の0.2モル/リットルの溶液からなるCVD用原料を得た。図5に示すCVD装置を用いて、シリコンウエハ上に以下の条件で、酸化ジルコニウム薄膜を製造した。得られた薄膜について、蛍光X線により膜厚測定、薄膜組成の確認を行ったところ、膜厚は10nmであり、膜組成は酸化ジルコニウムであった。
(条件)
原料:化合物No.9のエチルシクロヘキサン溶液(0.2モル/リットル);原料流量2.0 sccm、気化室温度:170℃、反応生ガス:酸素 200sccm、反応圧力:700 〜800Pa、反応温度(基板温度):300℃、成膜時間:2分、アニール:酸素雰囲気下600℃、3分。
Claims (8)
- 上記一般式(1)において、R1〜R8が全てメチル基である請求項1に記載の金属アルコキシド化合物。
- 上記一般式(1)において、Mがジルコニウムである請求項1又は2に記載の金属アルコキシド化合物。
- 上記一般式(1)において、Mがハフニウムである請求項1又は2に記載の金属アルコキシド化合物。
- 請求項1〜4のいずれかに記載の金属アルコキシド化合物を含有してなる薄膜形成用原料。
- 請求項5に記載の薄膜形成用原料を気化させて得た金属アルコキシド化合物を含有する蒸気を基体上に導入し、これを分解及び/又は化学反応させて基体上に薄膜を形成する薄膜の製造方法。
- 請求項5に記載の薄膜形成用原料を気化させて得た金属アルコキシド化合物を含有する蒸気を基体上に導入し、これを酸素及び/又はオゾンを含む反応性ガスの存在下で酸化分解及び/又は化学反応させて、基体上に金属アルコキシド化合物由来の金属酸化物を含有する薄膜を形成する薄膜の製造方法。
- 請求項6又は7に記載の薄膜の製造方法を用いて基体上に形成された薄膜。
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JP2006251575A JP5121196B2 (ja) | 2006-09-15 | 2006-09-15 | 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法 |
TW096128292A TWI383990B (zh) | 2006-09-15 | 2007-08-01 | Metal alkoxides, film forming materials and films |
KR1020070086619A KR101437663B1 (ko) | 2006-09-15 | 2007-08-28 | 금속 알콕시드 화합물, 박막 형성용 원료 및 박막의제조방법 |
DE102007042943A DE102007042943A1 (de) | 2006-09-15 | 2007-09-10 | Metallalkoxidverbindung, Material zum Bilden eines dünnen Films, und Verfahren zum Herstellen eines dünnen Films |
US11/854,109 US8003814B2 (en) | 2006-09-15 | 2007-09-12 | Metal alkoxide compound, material for forming thin film, and method for producing thin film |
CN2007101527093A CN101143873B (zh) | 2006-09-15 | 2007-09-14 | 金属醇盐化合物、薄膜形成用原料及薄膜制造方法 |
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US8697486B2 (en) * | 2009-04-15 | 2014-04-15 | Micro Technology, Inc. | Methods of forming phase change materials and methods of forming phase change memory circuitry |
DE102009028802B3 (de) * | 2009-08-21 | 2011-03-24 | Evonik Degussa Gmbh | Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung |
US20130011579A1 (en) | 2010-11-30 | 2013-01-10 | Air Products And Chemicals, Inc. | Metal-Enolate Precursors For Depositing Metal-Containing Films |
JP5923351B2 (ja) * | 2012-03-16 | 2016-05-24 | 株式会社Adeka | 銅膜形成用組成物及び該組成物を用いた銅膜の製造方法 |
KR102251989B1 (ko) | 2014-03-10 | 2021-05-14 | 삼성전자주식회사 | 유기 금속 전구체 및 이를 이용한 박막 형성 방법 |
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