DE102005056320A1 - CVD-Reaktor mit einem Gaseinlassorgan - Google Patents

CVD-Reaktor mit einem Gaseinlassorgan Download PDF

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Publication number
DE102005056320A1
DE102005056320A1 DE102005056320A DE102005056320A DE102005056320A1 DE 102005056320 A1 DE102005056320 A1 DE 102005056320A1 DE 102005056320 A DE102005056320 A DE 102005056320A DE 102005056320 A DE102005056320 A DE 102005056320A DE 102005056320 A1 DE102005056320 A1 DE 102005056320A1
Authority
DE
Germany
Prior art keywords
gas inlet
inlet member
process chamber
gas
particular according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102005056320A
Other languages
German (de)
English (en)
Inventor
Martin Dr. Dauelsberg
Johannes KÄPPELER
Martin Conor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Priority to DE102005056320A priority Critical patent/DE102005056320A1/de
Priority to US12/094,972 priority patent/US8152924B2/en
Priority to EP06830064A priority patent/EP1954853B1/de
Priority to KR1020087015426A priority patent/KR101354106B1/ko
Priority to JP2008541731A priority patent/JP5148501B2/ja
Priority to AT06830064T priority patent/ATE531833T1/de
Priority to PCT/EP2006/068716 priority patent/WO2007060161A1/de
Priority to TW095143509A priority patent/TWI414624B/zh
Publication of DE102005056320A1 publication Critical patent/DE102005056320A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE102005056320A 2005-11-25 2005-11-25 CVD-Reaktor mit einem Gaseinlassorgan Withdrawn DE102005056320A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102005056320A DE102005056320A1 (de) 2005-11-25 2005-11-25 CVD-Reaktor mit einem Gaseinlassorgan
US12/094,972 US8152924B2 (en) 2005-11-25 2006-11-11 CVD reactor comprising a gas inlet member
EP06830064A EP1954853B1 (de) 2005-11-25 2006-11-21 Cvd-reaktor mit einem gaseinlassorgan
KR1020087015426A KR101354106B1 (ko) 2005-11-25 2006-11-21 가스 입구 부재를 구비한 ｃｖｄ 반응기
JP2008541731A JP5148501B2 (ja) 2005-11-25 2006-11-21 ガス入口部品を有するｃｖｄ反応装置
AT06830064T ATE531833T1 (de) 2005-11-25 2006-11-21 Cvd-reaktor mit einem gaseinlassorgan
PCT/EP2006/068716 WO2007060161A1 (de) 2005-11-25 2006-11-21 Cvd-reaktor mit einem gaseinlassorgan
TW095143509A TWI414624B (zh) 2005-11-25 2006-11-24 具一進氣機構之ｃｖｄ反應器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005056320A DE102005056320A1 (de) 2005-11-25 2005-11-25 CVD-Reaktor mit einem Gaseinlassorgan

Publications (1)

Publication Number Publication Date
DE102005056320A1 true DE102005056320A1 (de) 2007-06-06

Family

ID=37681372

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102005056320A Withdrawn DE102005056320A1 (de) 2005-11-25 2005-11-25 CVD-Reaktor mit einem Gaseinlassorgan

Country Status (8)

Country Link
US (1) US8152924B2 (https=)
EP (1) EP1954853B1 (https=)
JP (1) JP5148501B2 (https=)
KR (1) KR101354106B1 (https=)
AT (1) ATE531833T1 (https=)
DE (1) DE102005056320A1 (https=)
TW (1) TWI414624B (https=)
WO (1) WO2007060161A1 (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008055582A1 (de) 2008-12-23 2010-06-24 Aixtron Ag MOCVD-Reaktor mit zylindrischem Gaseinlassorgan
DE102009043960A1 (de) 2009-09-08 2011-03-10 Aixtron Ag CVD-Reaktor
DE202011103798U1 (de) * 2011-07-28 2012-10-29 Michael Harro Liese Schnellverschluss für Reaktoren und Konvertoren
DE102011053498A1 (de) 2011-09-12 2013-03-14 Aixtron Se Verfahren und Vorrichtung zur Ermittlung der Verformung eines Substrates
DE102011056538A1 (de) 2011-12-16 2013-06-20 Aixtron Se Verfahren zum Entfernen unerwünschter Rückstände aus einem MOCVD-Reaktor sowie zugehörige Vorrichtung
DE102015101343A1 (de) 2015-01-29 2016-08-18 Aixtron Se CVD-Reaktor mit dreidimensional strukturierter Prozesskammerdecke
DE102019131794A1 (de) * 2019-11-25 2021-05-27 Aixtron Se Wandgekühltes Gaseinlassorgan für einen CVD-Reaktor
DE102021103245A1 (de) 2021-02-11 2022-08-11 Aixtron Se CVD-Reaktor mit einem in einer Vorlaufzone ansteigenden Prozesskammerboden

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101802254B (zh) 2007-10-11 2013-11-27 瓦伦斯处理设备公司 化学气相沉积反应器
JP5324347B2 (ja) * 2009-07-15 2013-10-23 大陽日酸イー・エム・シー株式会社 気相成長装置
JP5409413B2 (ja) * 2010-01-26 2014-02-05 日本パイオニクス株式会社 Ｉｉｉ族窒化物半導体の気相成長装置
DE102011055061A1 (de) * 2011-11-04 2013-05-08 Aixtron Se CVD-Reaktor bzw. Substrathalter für einen CVD-Reaktor
TWI565825B (zh) * 2012-06-07 2017-01-11 索泰克公司 沉積系統之氣體注入組件及相關使用方法
US9388494B2 (en) 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US20150345046A1 (en) * 2012-12-27 2015-12-03 Showa Denko K.K. Film-forming device
US20160194753A1 (en) * 2012-12-27 2016-07-07 Showa Denko K.K. SiC-FILM FORMATION DEVICE AND METHOD FOR PRODUCING SiC FILM
US9399228B2 (en) * 2013-02-06 2016-07-26 Novellus Systems, Inc. Method and apparatus for purging and plasma suppression in a process chamber
TWI654333B (zh) 2013-12-18 2019-03-21 美商蘭姆研究公司 具有均勻性折流板之半導體基板處理設備
KR102372893B1 (ko) * 2014-12-04 2022-03-10 삼성전자주식회사 발광 소자 제조용 화학 기상 증착 장치
DE102015101462A1 (de) * 2015-02-02 2016-08-04 Aixtron Se Verfahren und Vorrichtung zum Abscheiden einer III-V-Halbleiterschicht
US9758868B1 (en) 2016-03-10 2017-09-12 Lam Research Corporation Plasma suppression behind a showerhead through the use of increased pressure
TWI624561B (zh) * 2016-08-12 2018-05-21 漢民科技股份有限公司 用於半導體製程之氣體噴射器及成膜裝置
TWI649446B (zh) * 2017-03-15 2019-02-01 漢民科技股份有限公司 應用於半導體設備之可拆卸式噴氣裝置
TWI633585B (zh) * 2017-03-31 2018-08-21 漢民科技股份有限公司 用於半導體製程之氣體噴射器與頂板之組合及成膜裝置
KR102369676B1 (ko) 2017-04-10 2022-03-04 삼성디스플레이 주식회사 표시 장치의 제조장치 및 표시 장치의 제조방법
KR102935543B1 (ko) 2019-07-17 2026-03-05 램 리써치 코포레이션 기판 프로세싱을 위한 산화 프로파일의 변조
TR2022000837A2 (tr) * 2022-01-24 2023-08-21 Tobb Ekonomi Ve Teknoloji Ueniversitesi Bi̇r reaktör

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WO1999045167A1 (en) * 1998-03-06 1999-09-10 Asm America, Inc. Method of depositing silicon with high step coverage
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US6539891B1 (en) * 1999-06-19 2003-04-01 Genitech, Inc. Chemical deposition reactor and method of forming a thin film using the same
US20030113479A1 (en) * 2001-08-23 2003-06-19 Konica Corporation Atmospheric pressure plasma treatmet apparatus and atmospheric pressure plasma treatment method
DE10247921A1 (de) * 2002-10-10 2004-04-22 Aixtron Ag Hydrid VPE Reaktor
JP2004200225A (ja) * 2002-12-16 2004-07-15 Sharp Corp 気相成長装置
JP2005072314A (ja) * 2003-08-26 2005-03-17 Sharp Corp 気相成長装置および気相成長方法

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DE10133914A1 (de) * 2001-07-12 2003-01-23 Aixtron Ag Prozesskammer mit abschnittsweise unterschiedlich drehangetriebenem Boden und Schichtabscheideverfahren in einer derartigen Prozesskammer
DE10153463A1 (de) 2001-10-30 2003-05-15 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
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DE1913676A1 (de) * 1969-03-18 1970-09-24 Siemens Ag Verfahren zum Abscheiden von Schichten aus halbleitendem bzw. isolierendem Material aus einem stroemenden Reaktionsgas auf erhitzte Halbleiterkristalle bzw. zum Dotieren solcher Kristalle aus einem stroemenden dotierenden Gas
JPS6119119A (ja) * 1984-07-06 1986-01-28 Nec Corp 気相成長装置
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
US5755878A (en) * 1994-10-25 1998-05-26 Shin-Etsu Handotai Co., Ltd. Method for vapor phase growth
WO1999045167A1 (en) * 1998-03-06 1999-09-10 Asm America, Inc. Method of depositing silicon with high step coverage
US6539891B1 (en) * 1999-06-19 2003-04-01 Genitech, Inc. Chemical deposition reactor and method of forming a thin film using the same
DE10057134A1 (de) * 2000-11-17 2002-05-23 Aixtron Ag Verfahren zum Abscheiden von insbesondere kristallinen Schichten sowie Vorrichtung zur Durchführung des Verfahrens
US20030113479A1 (en) * 2001-08-23 2003-06-19 Konica Corporation Atmospheric pressure plasma treatmet apparatus and atmospheric pressure plasma treatment method
DE10247921A1 (de) * 2002-10-10 2004-04-22 Aixtron Ag Hydrid VPE Reaktor
JP2004200225A (ja) * 2002-12-16 2004-07-15 Sharp Corp 気相成長装置
JP2005072314A (ja) * 2003-08-26 2005-03-17 Sharp Corp 気相成長装置および気相成長方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008055582A1 (de) 2008-12-23 2010-06-24 Aixtron Ag MOCVD-Reaktor mit zylindrischem Gaseinlassorgan
WO2010072380A1 (de) 2008-12-23 2010-07-01 Aixtron Ag Mocvd-reaktor mit zylindrischem gaseinlassorgan
DE102009043960A1 (de) 2009-09-08 2011-03-10 Aixtron Ag CVD-Reaktor
WO2011029739A1 (de) 2009-09-08 2011-03-17 Aixtron Ag Cvd-reaktor
DE202011103798U1 (de) * 2011-07-28 2012-10-29 Michael Harro Liese Schnellverschluss für Reaktoren und Konvertoren
DE102011053498A1 (de) 2011-09-12 2013-03-14 Aixtron Se Verfahren und Vorrichtung zur Ermittlung der Verformung eines Substrates
WO2013037780A1 (de) 2011-09-12 2013-03-21 Aixtron Se Verfahren und vorrichtung zur ermittlung der verformung eines substrates
DE102011056538A1 (de) 2011-12-16 2013-06-20 Aixtron Se Verfahren zum Entfernen unerwünschter Rückstände aus einem MOCVD-Reaktor sowie zugehörige Vorrichtung
DE102015101343A1 (de) 2015-01-29 2016-08-18 Aixtron Se CVD-Reaktor mit dreidimensional strukturierter Prozesskammerdecke
DE102019131794A1 (de) * 2019-11-25 2021-05-27 Aixtron Se Wandgekühltes Gaseinlassorgan für einen CVD-Reaktor
DE102021103245A1 (de) 2021-02-11 2022-08-11 Aixtron Se CVD-Reaktor mit einem in einer Vorlaufzone ansteigenden Prozesskammerboden

Also Published As

Publication number Publication date
EP1954853A1 (de) 2008-08-13
ATE531833T1 (de) 2011-11-15
US20080308040A1 (en) 2008-12-18
WO2007060161A1 (de) 2007-05-31
JP2009517541A (ja) 2009-04-30
US8152924B2 (en) 2012-04-10
KR20080075205A (ko) 2008-08-14
EP1954853B1 (de) 2011-11-02
TW200728497A (en) 2007-08-01
JP5148501B2 (ja) 2013-02-20
KR101354106B1 (ko) 2014-01-24
TWI414624B (zh) 2013-11-11

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