WO2007060161A1 - Cvd-reaktor mit einem gaseinlassorgan - Google Patents

Cvd-reaktor mit einem gaseinlassorgan Download PDF

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Publication number
WO2007060161A1
WO2007060161A1 PCT/EP2006/068716 EP2006068716W WO2007060161A1 WO 2007060161 A1 WO2007060161 A1 WO 2007060161A1 EP 2006068716 W EP2006068716 W EP 2006068716W WO 2007060161 A1 WO2007060161 A1 WO 2007060161A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas inlet
inlet member
process chamber
gas
particular according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2006/068716
Other languages
German (de)
English (en)
French (fr)
Inventor
Martin Dauelsberg
Johannes KÄPPELER
Conor Martin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US12/094,972 priority Critical patent/US8152924B2/en
Application filed by Aixtron SE filed Critical Aixtron SE
Priority to EP06830064A priority patent/EP1954853B1/de
Priority to KR1020087015426A priority patent/KR101354106B1/ko
Priority to JP2008541731A priority patent/JP5148501B2/ja
Priority to AT06830064T priority patent/ATE531833T1/de
Publication of WO2007060161A1 publication Critical patent/WO2007060161A1/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles

Definitions

  • the invention relates to a device for depositing at least one layer on a substrate by means of a process gas which is introduced into a horizontally extending process chamber by a vertically extending flow channel of a stationary relative to a reactor housing gas inlet member, wherein the process gas from a gas outlet opening of a into the center of the rotationally symmetric process chamber projecting portion of the gas inlet member and flows over a horizontally extending, rotating around the center bottom of the process chamber in the radially outward direction, on which the substrate is located.
  • a hydride From the lower outlet opening is a hydride and exit from the upper outlet opening an organometallic component in each case with a carrier gas.
  • the outlet openings lie on a cylindrical surface.
  • DE 10133914 A1 likewise describes a MOCVD reactor with a rotatable susceptor holder and a stationary gas inlet member, which is located in the center of rotation and from which the process gases exit.
  • the hydride exits from a lower outlet opening.
  • the lower wall of this outlet opening is formed by the bottom of the process chamber.
  • DE 10153463 A1 describes a MOCVD reactor with a rotary-driven process chamber bottom. Above the bottom, in the center of the process chamber, there is a gas inlet member with an opening at the front, from which the hydride exits. A second exit opening is located directly below the process chamber ceiling.
  • the outlet opening has a cylindrical shell shape and is formed by a frit. At the rear of the outlet opening, a gas deflection surface is provided, which has a curved surface.
  • a CVD reactor in which the process gases are introduced from the outside into a circular process chamber. This is done through openings in the peripheral wall of the process chamber, the bottom of which is formed by a rotationally driven substrate holder. At the radially outer edge of the substrate holder Stromleitkanäle are provided. Similar Stromleitkanäle are the center of the substrate holder, through which the gases are removed from the process chamber.
  • the present invention seeks to improve the gas flow immediately above the bottom of the process chamber.
  • each claim represents an independent solution to the problem and each claim can be combined with any other claim.
  • the invention is based on the finding that even slight unevenness on the substrate can lead to local cooling.
  • slight unevennesses on the bottom of the process chamber lead to eddies, which can lead to growth inhomogeneities in the further course of the gas flow.
  • the end section of the gas inlet member projects into a cup-shaped recess and an end section of a gas deflecting surface is flush with the bottom.
  • the pot-like recess is associated with the bottom of the process chamber and in particular the rotationally driven Suszeptorhalters.
  • this cup-shaped depression protrudes a front portion of the gas inlet organ.
  • the gas outlet opening for the hydride which may be arsine, phosphine or ammonia.
  • This outlet opening has a rotational symmetry.
  • the gas inlet member Since the gas inlet member is stationary relative to the reactor housing, the susceptor holder but opposite to the gas inlet Lassorgan rotates, the gas inlet member is not in touching contact with the walls of the recess. Rather, movement slots are provided, so there is a slight gap between the flat end face of the gas inlet member and the bottom of the recess. Also between the pot wall and the end portion of the gas inlet member is a circumferential gap. However, the latter is so small that it does not constitute a relevant disturbance of the gas flow.
  • the Gasumlenk Design is rounded in the flow direction of the gas. The gas passes from the vertically extending flow channel in the curved region and is diverted there vortex-free in a horizontal direction.
  • the effective cross section of the flow channel increases in such a way that a reduction of the flow velocity occurs.
  • the entire flow is a laminar flow.
  • this first gas outlet opening whose one wall is flush with the bottom of the process chamber, there is at least one further second gas outlet opening for a second process gas, for example an organometallic component.
  • This second gas outlet opening is connected to a second flow channel.
  • the gas outlet member is preferably made of stainless steel and liquid cooled.
  • the gas outlet member may have a central region which has a cooling liquid channel. This cooling liquid channel extends into the end portion of the gas inlet member, which rests in the recess of the bottom of the process chamber.
  • the gas inlet member has a substantially cylindrical outline contour.
  • a process chamber ceiling is firmly but releasably connected to the gas inlet member.
  • the process chamber ceiling has a central opening with which it can be inserted via the gas inlet member.
  • the process chamber ceiling is held like a bayonet on the gas inlet member.
  • the gas inlet member can project radially outwardly protruding projections. have, corresponding to corresponding recesses of the central opening of the process chamber ceiling. If these recesses align with the projections, the process chamber ceiling can be displaced over the projections. If subsequently the process chamber ceiling is rotated slightly, then the edge of the central opening rests on the projections.
  • FIG. 1 roughly schematically a half section through a process chamber in the vertical direction
  • Fig. 2 is a plan view of the process chamber ceiling with cut gas inlet member
  • FIG. 3 shows a further embodiment of the invention in a representation according to FIG. 1.
  • the exemplary embodiment is a MOCVD reactor.
  • reactor housing which consists for example of stainless steel and is sealed against the ambient atmosphere gas-tight.
  • the process gases and the carrier gases are introduced via suitable gas lines.
  • the process gases used are organometallic compounds of the third or second main group of the periodic table.
  • compounds of the fifth main group of the Periodic Table, and in particular hydrides, are used as process gases.
  • compounds of the sixth main group come into consideration.
  • the reactor has a gas outlet member, which is also not shown in the drawing.
  • Within the reactor housing is in the drawing in half-section sketched on the process chamber 1. This has a extending in the horizontal plane bottom 8 '.
  • a process chamber ceiling 2 is provided.
  • the process chamber ceiling 2 and the bottom 8 ' are designed substantially rotationally symmetrical.
  • a gas inlet member projects into the process chamber.
  • the bottom 8 ' has a cup-shaped recess 23.
  • the end portion of the gas inlet member 3 protrudes so that between the end face 3' of the gas inlet member 3 and the bottom of the recess 23 only a small movement gap 10 remains.
  • a movement gap 22 extends in an annular manner around the end section of the gas inlet element 3 which is inserted in the recess 23. This annular gap 22 is bounded outwardly by the cup wall.
  • annular gap 22 is shown greatly enlarged. This is for illustrative purposes only. In principle, this movement gap 22 should be formed as narrow as possible.
  • the bottom 8 'of the process chamber 1 is rotationally driven during the coating process.
  • the bottom 8 ' is essentially formed by a susceptor holder 8, which may consist of graphite and which can be heated from below by means of an RF heater.
  • the structure of the base 8 ' corresponds essentially to the structure described by DE 10153463 A1, which is why reference is made in this regard to this document.
  • the Suszeptorhalter 8 has an annular disk-shaped shape. This rotary body has on its upper side, which faces the process chamber 1, a plurality of pockets in which susceptors 9 are located.
  • the susceptors 9 have a circular disk shape and lie on a dynamic gas bearing.
  • the gas bearing generating nozzles are oriented so that they not only form a pivot bearing for the susceptors 9, but also drive the susceptors 9 rotationally.
  • On each susceptor 9 is a substrate to be coated.
  • the bottom of the recess 23 is formed by a tension plate 11 which is rotatably connected to a pulling piece.
  • a tension plate 11 which is rotatably connected to a pulling piece.
  • a pressure plate 12 which is rotatably connected to a pulling piece.
  • the tension plate 11 and the pressure plate 12 take the susceptor holder 8 between them.
  • the axial securing of the pressure plate 12 takes place by means of a securing piece 13.
  • the ceiling plate 2 is fixedly attached to the gas inlet member 3.
  • the attachment is bayonet-like.
  • supporting projections 17 are arranged on the outer wall 21 of the gas inlet device 3 and protrude radially outward.
  • the central opening of the ceiling plate has recesses 18 at the corresponding locations, so that it can be lifted from below via the support projections 17. After a slight rotation of the ceiling plate 2, this can be supported on the support projections 17.
  • the ceiling plate 2 is thereby replaceable in a simple manner.
  • the gas inlet member 3 Within the gas inlet member 3 are several, in the embodiment two, flow channels 4 and 5.
  • the flow channels 4 and 5 are arranged coaxially with each other.
  • the gas inlet member forms for this purpose a central element 19, which has a cooling water channel 24 in the interior, which projects into the end portion of the gas inlet member 3.
  • the outer surface of the central element 19 extends in the end region curved in the axial direction. This is accompanied by a constant increase in the diameter of the central element 19, which reaches the diameter of the gas inlet element 3 in the end section of the gas inlet element 3.
  • This cross Section contour line forms a Gasumlenk Chemistry 6, which redirects the gas flow from a vertical direction in a horizontal direction.
  • the deflection surface 6 is continuous, kink-free and step-free out of the inner wall of the flow channel 4 and extends in such a way that its end section 6 'extends in the horizontal direction and is flush with the bottom 8' of the process chamber 1.
  • the outlet opening 4 'of the flow channel 4 extending on a cylindrical surface has a considerably larger area than the cross-sectional area of the flow channel 4, so that the laminar flow through the flow channel 4 reduces in a laminar flow over the bottom 8'.
  • a second outlet opening 5' Above the outlet opening 4 'there is a second outlet opening 5'.
  • These outlet opening 5 ' is located on a cylinder jacket surface.
  • the outer wall of the first flow channel 4 is formed by a tubular central element 20 of the gas inlet member 3.
  • the inner wall of the second flow channel 5 is formed by the outer wall of this central element 4, which also forms a Gasumlenk Structure 7 in its end region, which redirects the flow through the second flow channel 5 by 90 °. This Gasumlenk nature 7 is smooth-walled.
  • the outer wall of the second flow channel 5 is formed by the outer element 21, which also carries the support projections 17.
  • the end face 3 'of the gas inlet member 3 is colder than the bottom of the recess 23 located below because of the coolant channels 24 arranged directly above it.
  • the gas emerging from the flow channel 4 is brought to the process temperature very rapidly.
  • the middle element 20 and the outer element 21 may be liquid-cooled. The coolant channels required for this purpose are not shown for the sake of clarity.
  • the reactor housing is closed by a lid. This lid can be opened.
  • the gas inlet member 3 hangs on the lid. If the lid is opens, so remove the ceiling plate 2 and the gas inlet member 3 from the bottom 8 ', so that the susceptors 9 can be loaded or unloaded with substrates. In this movement, the end portion of the gas inlet member 3 emerges from the recess 23.
  • the lid of the reactor is closed again, the end portion of the gas inlet member 3 dips again into the recess 23 and floats there above the bottom of the recess 23 and at a distance from the circular Wall of the recess 23.
  • swirl mixers which are designated by the reference numeral 26. These swirl mixers form a pressure barrier for the gas entering the flow channels 4, 5.
  • these swirl mixers ensure that the gas flows uniformly in the circumferential direction through the lower sections of the flow channels 4, 5 in order uniformly and homogeneously from the openings 5 'in the circumferential direction. 4 'flow out.
  • a cooling chamber 25 is provided in the figure 1, which is traversed by a cooling liquid.
  • the illustrated in the figure 3 further embodiment of the invention has a total of three outlet openings 4 ', 5', which are arranged one above the other in the vertical direction.
  • the associated flow channels 4, 5 as well as the first embodiment have swirl mixers 26 in order to homogenize the gas distribution in the region of the outlet openings 4 ', 5' in the circumferential direction.
  • the additional gas outlet opening 5 'or the additional flow channel 5 is formed by an additional central element 20.
  • the process chamber ceiling 2 is provided with a central opening whose diameter is larger than the diameter of the gas inlet member 3, so that the opening of the process chamber cover 2 can be slipped over the free end of the gas inlet member 3 at a lowered susceptor holder 8.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
PCT/EP2006/068716 2005-11-25 2006-11-21 Cvd-reaktor mit einem gaseinlassorgan Ceased WO2007060161A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US12/094,972 US8152924B2 (en) 2005-11-25 2006-11-11 CVD reactor comprising a gas inlet member
EP06830064A EP1954853B1 (de) 2005-11-25 2006-11-21 Cvd-reaktor mit einem gaseinlassorgan
KR1020087015426A KR101354106B1 (ko) 2005-11-25 2006-11-21 가스 입구 부재를 구비한 ｃｖｄ 반응기
JP2008541731A JP5148501B2 (ja) 2005-11-25 2006-11-21 ガス入口部品を有するｃｖｄ反応装置
AT06830064T ATE531833T1 (de) 2005-11-25 2006-11-21 Cvd-reaktor mit einem gaseinlassorgan

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005056320.1 2005-11-25
DE102005056320A DE102005056320A1 (de) 2005-11-25 2005-11-25 CVD-Reaktor mit einem Gaseinlassorgan

Publications (1)

Publication Number Publication Date
WO2007060161A1 true WO2007060161A1 (de) 2007-05-31

Family

ID=37681372

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2006/068716 Ceased WO2007060161A1 (de) 2005-11-25 2006-11-21 Cvd-reaktor mit einem gaseinlassorgan

Country Status (8)

Country Link
US (1) US8152924B2 (https=)
EP (1) EP1954853B1 (https=)
JP (1) JP5148501B2 (https=)
KR (1) KR101354106B1 (https=)
AT (1) ATE531833T1 (https=)
DE (1) DE102005056320A1 (https=)
TW (1) TWI414624B (https=)
WO (1) WO2007060161A1 (https=)

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WO2023140824A3 (en) * 2022-01-24 2023-08-24 Tobb Ekonomi Ve Teknoloji Universitesi A reactor

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DE102008055582A1 (de) 2008-12-23 2010-06-24 Aixtron Ag MOCVD-Reaktor mit zylindrischem Gaseinlassorgan
JP5324347B2 (ja) * 2009-07-15 2013-10-23 大陽日酸イー・エム・シー株式会社 気相成長装置
DE102009043960A1 (de) 2009-09-08 2011-03-10 Aixtron Ag CVD-Reaktor
JP5409413B2 (ja) * 2010-01-26 2014-02-05 日本パイオニクス株式会社 Ｉｉｉ族窒化物半導体の気相成長装置
DE202011103798U1 (de) * 2011-07-28 2012-10-29 Michael Harro Liese Schnellverschluss für Reaktoren und Konvertoren
DE102011053498A1 (de) 2011-09-12 2013-03-14 Aixtron Se Verfahren und Vorrichtung zur Ermittlung der Verformung eines Substrates
DE102011055061A1 (de) * 2011-11-04 2013-05-08 Aixtron Se CVD-Reaktor bzw. Substrathalter für einen CVD-Reaktor
DE102011056538A1 (de) 2011-12-16 2013-06-20 Aixtron Se Verfahren zum Entfernen unerwünschter Rückstände aus einem MOCVD-Reaktor sowie zugehörige Vorrichtung
TWI565825B (zh) * 2012-06-07 2017-01-11 索泰克公司 沉積系統之氣體注入組件及相關使用方法
US9388494B2 (en) 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US20150345046A1 (en) * 2012-12-27 2015-12-03 Showa Denko K.K. Film-forming device
US20160194753A1 (en) * 2012-12-27 2016-07-07 Showa Denko K.K. SiC-FILM FORMATION DEVICE AND METHOD FOR PRODUCING SiC FILM
US9399228B2 (en) * 2013-02-06 2016-07-26 Novellus Systems, Inc. Method and apparatus for purging and plasma suppression in a process chamber
TWI654333B (zh) 2013-12-18 2019-03-21 美商蘭姆研究公司 具有均勻性折流板之半導體基板處理設備
KR102372893B1 (ko) * 2014-12-04 2022-03-10 삼성전자주식회사 발광 소자 제조용 화학 기상 증착 장치
DE102015101343A1 (de) 2015-01-29 2016-08-18 Aixtron Se CVD-Reaktor mit dreidimensional strukturierter Prozesskammerdecke
DE102015101462A1 (de) * 2015-02-02 2016-08-04 Aixtron Se Verfahren und Vorrichtung zum Abscheiden einer III-V-Halbleiterschicht
US9758868B1 (en) 2016-03-10 2017-09-12 Lam Research Corporation Plasma suppression behind a showerhead through the use of increased pressure
TWI624561B (zh) * 2016-08-12 2018-05-21 漢民科技股份有限公司 用於半導體製程之氣體噴射器及成膜裝置
TWI649446B (zh) * 2017-03-15 2019-02-01 漢民科技股份有限公司 應用於半導體設備之可拆卸式噴氣裝置
TWI633585B (zh) * 2017-03-31 2018-08-21 漢民科技股份有限公司 用於半導體製程之氣體噴射器與頂板之組合及成膜裝置
KR102369676B1 (ko) 2017-04-10 2022-03-04 삼성디스플레이 주식회사 표시 장치의 제조장치 및 표시 장치의 제조방법
KR102935543B1 (ko) 2019-07-17 2026-03-05 램 리써치 코포레이션 기판 프로세싱을 위한 산화 프로파일의 변조
DE102019131794A1 (de) * 2019-11-25 2021-05-27 Aixtron Se Wandgekühltes Gaseinlassorgan für einen CVD-Reaktor
DE102021103245A1 (de) * 2021-02-11 2022-08-11 Aixtron Se CVD-Reaktor mit einem in einer Vorlaufzone ansteigenden Prozesskammerboden

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US20080308040A1 (en) 2008-12-18
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JP2009517541A (ja) 2009-04-30
US8152924B2 (en) 2012-04-10
KR20080075205A (ko) 2008-08-14
EP1954853B1 (de) 2011-11-02
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KR101354106B1 (ko) 2014-01-24
TWI414624B (zh) 2013-11-11

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