JP5148501B2 - ガス入口部品を有するcvd反応装置 - Google Patents
ガス入口部品を有するcvd反応装置 Download PDFInfo
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- JP5148501B2 JP5148501B2 JP2008541731A JP2008541731A JP5148501B2 JP 5148501 B2 JP5148501 B2 JP 5148501B2 JP 2008541731 A JP2008541731 A JP 2008541731A JP 2008541731 A JP2008541731 A JP 2008541731A JP 5148501 B2 JP5148501 B2 JP 5148501B2
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- 238000000034 method Methods 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 238000005452 bending Methods 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims 1
- 230000000284 resting effect Effects 0.000 claims 1
- 239000010959 steel Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 100
- 150000004678 hydrides Chemical class 0.000 description 5
- 239000000498 cooling water Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 239000000110 cooling liquid Substances 0.000 description 3
- 150000002902 organometallic compounds Chemical class 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45508—Radial flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
プロセスチャンバの床と同じ高さの壁をもつこの第1のガス出口開口の上側に、例えば有機金属化合物である第2のプロセスガスのための少なくとも1つの第2のガス出口開口がある。この第2のガス出口開口は、第2の流路に連通している。
ガス出口部品は、好適にはステンレス鋼で形成され、液体冷却される。このために、ガス出口部品は、冷却液体流路を備えた中央領域をゆうしてもよい。この冷却液体流路は、ガス入口部品の端部内にまっすぐ延びている。ガス入口部品の端部は、プロセスチャンバの床の凹部内に位置している。
Claims (11)
- ガス入口部品(3)の流路(4)を通り水平方向に延びるプロセスチャンバ(1)内に導入されるプロセスガスにより基板上に少なくとも1つの層を堆積する装置であって、前記流路(4)は垂直方向に延在しかつ前記ガス入口部品(3)は反応装置ハウジングに配置固定され、前記プロセスガスは回転対称な前記プロセスチャンバ(1)の中心に突出するガス入口部品(1)の一部であるガス出口開口から流出し、前記プロセスチャンバ(1)の床(8')の上を径方向外側に向かって流れ、前記床(8')は水平方向に延在しかつ前記プロセスチャンバ(1)の中心周りに回転し、かつ前記基板は前記床(8')上に載置されている、前記装置において、
前記ガス入口部品(3)の端部(3')が、プロセスチャンバ(1)の床(8')の上面に位置する皿状の凹部(23)内に突出し、前記ガス入口部品(3)の外壁と中央部品(19)との間をプロセスガスの流路(4)とし、かつ、前記中央部品(19)の端部領域において軸方向から曲がったガス屈曲面(6)を有し、前記ガス屈曲面(6)の端部(6')と前記プロセスチャンバ(1)の床(8')とは同じ高さであることを特徴とする装置。 - 前記ガス屈曲面が、丸みをもちかつ折れ部及び段部がなく前記流路(4)の壁に接合されていることを特徴とする請求項1に記載の装置。
- 前記床(8')は、回転駆動されるサセプタホルダー(8)により形成されている請求項1又は2に記載の装置。
- 前記サセプタホルダー(8)は、1又は複数の基板を載置する複数のサセプタ(9)を搭載し、前記サセプタが回転駆動されることを特徴とする請求項3に記載の装置。
- 少なくとも1つのさらに別の第2の流路の第2のガス出口開口が、第1の前記流路(4)の出口開口の上側に設けられていることを特徴とする請求項1に記載の装置。
- 前記ガス入口部品(3)が、鋼製であることを特徴とする請求項1〜5のいずれかに記載の装置。
- 前記ガス入口部品(3)の内側の前記流路が、前記ガス出口開口の領域近傍において同心状に配置されていることを特徴とする請求項1〜6のいずれかに記載の装置。
- 前記ガス入口部品(3)がプロセスチャンバカバー(2)を載置し、該プロセスチャンバカバー(2)よりも直径が小さいことにより、前記プロセスチャンバ(1)内に突出する該ガス入口部品(3)の一部の上に該プロセスチャンバカバーを置くことができることを特徴とする請求項1〜7のいずれかに記載の装置。
- 前記プロセスチャンバカバー(2)が、差し込み固定方式で前記ガス入口部品(3)に固定されていることを特徴とする請求項8に記載の装置。
- 前記ガス入口部品(3)が液体冷却されることを特徴とする請求項1〜9のいずれかに記載の装置。
- 液体冷却のための流路(24)が、前記凹部(23)内に突出している前記ガス入口部品(3)の一部内に延在していることを特徴とする請求項1〜10のいずれかに記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005056320.1 | 2005-11-25 | ||
DE102005056320A DE102005056320A1 (de) | 2005-11-25 | 2005-11-25 | CVD-Reaktor mit einem Gaseinlassorgan |
PCT/EP2006/068716 WO2007060161A1 (de) | 2005-11-25 | 2006-11-21 | Cvd-reaktor mit einem gaseinlassorgan |
Publications (3)
Publication Number | Publication Date |
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JP2009517541A JP2009517541A (ja) | 2009-04-30 |
JP2009517541A5 JP2009517541A5 (ja) | 2012-09-20 |
JP5148501B2 true JP5148501B2 (ja) | 2013-02-20 |
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Application Number | Title | Priority Date | Filing Date |
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JP2008541731A Active JP5148501B2 (ja) | 2005-11-25 | 2006-11-21 | ガス入口部品を有するcvd反応装置 |
Country Status (8)
Country | Link |
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US (1) | US8152924B2 (ja) |
EP (1) | EP1954853B1 (ja) |
JP (1) | JP5148501B2 (ja) |
KR (1) | KR101354106B1 (ja) |
AT (1) | ATE531833T1 (ja) |
DE (1) | DE102005056320A1 (ja) |
TW (1) | TWI414624B (ja) |
WO (1) | WO2007060161A1 (ja) |
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DE10153463A1 (de) | 2001-10-30 | 2003-05-15 | Aixtron Ag | Verfahren und Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten |
DE10247921A1 (de) * | 2002-10-10 | 2004-04-22 | Aixtron Ag | Hydrid VPE Reaktor |
JP2004200225A (ja) * | 2002-12-16 | 2004-07-15 | Sharp Corp | 気相成長装置 |
JP2005072314A (ja) * | 2003-08-26 | 2005-03-17 | Sharp Corp | 気相成長装置および気相成長方法 |
JP4542860B2 (ja) * | 2004-10-04 | 2010-09-15 | 大陽日酸株式会社 | 気相成長装置 |
JP4542859B2 (ja) * | 2004-10-04 | 2010-09-15 | 大陽日酸株式会社 | 気相成長装置 |
JP4598568B2 (ja) * | 2005-03-09 | 2010-12-15 | 大陽日酸株式会社 | 気相成長装置 |
-
2005
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2006
- 2006-11-11 US US12/094,972 patent/US8152924B2/en active Active
- 2006-11-21 JP JP2008541731A patent/JP5148501B2/ja active Active
- 2006-11-21 WO PCT/EP2006/068716 patent/WO2007060161A1/de active Application Filing
- 2006-11-21 KR KR1020087015426A patent/KR101354106B1/ko active IP Right Grant
- 2006-11-21 AT AT06830064T patent/ATE531833T1/de active
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Also Published As
Publication number | Publication date |
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US20080308040A1 (en) | 2008-12-18 |
TWI414624B (zh) | 2013-11-11 |
EP1954853A1 (de) | 2008-08-13 |
JP2009517541A (ja) | 2009-04-30 |
ATE531833T1 (de) | 2011-11-15 |
TW200728497A (en) | 2007-08-01 |
KR20080075205A (ko) | 2008-08-14 |
EP1954853B1 (de) | 2011-11-02 |
KR101354106B1 (ko) | 2014-01-24 |
WO2007060161A1 (de) | 2007-05-31 |
US8152924B2 (en) | 2012-04-10 |
DE102005056320A1 (de) | 2007-06-06 |
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