DE102005050330B4 - Leistungshalbleitervorrichtung und Herstellungsverfahren dafür - Google Patents

Leistungshalbleitervorrichtung und Herstellungsverfahren dafür Download PDF

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Publication number
DE102005050330B4
DE102005050330B4 DE102005050330.6A DE102005050330A DE102005050330B4 DE 102005050330 B4 DE102005050330 B4 DE 102005050330B4 DE 102005050330 A DE102005050330 A DE 102005050330A DE 102005050330 B4 DE102005050330 B4 DE 102005050330B4
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Prior art keywords
power semiconductor
metal block
main surface
semiconductor device
semiconductor chip
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Expired - Lifetime
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DE102005050330.6A
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German (de)
English (en)
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DE102005050330A1 (de
Inventor
Toshiaki Shinohara
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07636—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07637—Techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/865—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/871—Bond wires and strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/764—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
DE102005050330.6A 2004-11-01 2005-10-20 Leistungshalbleitervorrichtung und Herstellungsverfahren dafür Expired - Lifetime DE102005050330B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004317929A JP4338620B2 (ja) 2004-11-01 2004-11-01 半導体装置及びその製造方法
JP2004-317929 2004-11-01

Publications (2)

Publication Number Publication Date
DE102005050330A1 DE102005050330A1 (de) 2006-06-08
DE102005050330B4 true DE102005050330B4 (de) 2015-03-12

Family

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Family Applications (1)

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DE102005050330.6A Expired - Lifetime DE102005050330B4 (de) 2004-11-01 2005-10-20 Leistungshalbleitervorrichtung und Herstellungsverfahren dafür

Country Status (4)

Country Link
US (1) US7642640B2 (cg-RX-API-DMAC7.html)
JP (1) JP4338620B2 (cg-RX-API-DMAC7.html)
CN (1) CN100594602C (cg-RX-API-DMAC7.html)
DE (1) DE102005050330B4 (cg-RX-API-DMAC7.html)

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US7800208B2 (en) * 2007-10-26 2010-09-21 Infineon Technologies Ag Device with a plurality of semiconductor chips
JP4506848B2 (ja) * 2008-02-08 2010-07-21 株式会社デンソー 半導体モジュール
DE102008031231B4 (de) * 2008-07-02 2012-12-27 Siemens Aktiengesellschaft Herstellungsverfahren für planare elektronsche Leistungselektronik-Module für Hochtemperatur-Anwendungen und entsprechendes Leistungselektronik-Modul
JP5398269B2 (ja) * 2009-01-07 2014-01-29 三菱電機株式会社 パワーモジュール及びパワー半導体装置
JP5268660B2 (ja) * 2009-01-08 2013-08-21 三菱電機株式会社 パワーモジュール及びパワー半導体装置
JP5488645B2 (ja) * 2009-06-30 2014-05-14 株式会社デンソー 半導体装置およびその製造方法
JP5018909B2 (ja) * 2009-06-30 2012-09-05 株式会社デンソー 半導体装置
JP5306171B2 (ja) * 2009-12-25 2013-10-02 三菱電機株式会社 半導体装置
JP2011216564A (ja) * 2010-03-31 2011-10-27 Mitsubishi Electric Corp パワーモジュール及びその製造方法
JP2012069764A (ja) * 2010-09-24 2012-04-05 On Semiconductor Trading Ltd 回路装置およびその製造方法
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ITMI20111218A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo di potenza ad elevata velocita? di commutazione
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ITMI20111214A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo di potenza a spessore ridotto
ITMI20111213A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo elettronico a semi-ponte con dissipatore di calore ausiliario comune
ITMI20111216A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo elettronico di potenza ad elevata dissipazione di calore e stabilita?
ITMI20111219A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Sistema con dissipatore di calore condiviso
JP2013021254A (ja) * 2011-07-14 2013-01-31 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
TWM422161U (en) * 2011-08-18 2012-02-01 Ks Terminals Inc Improved diode structure
JP5542765B2 (ja) * 2011-09-26 2014-07-09 日立オートモティブシステムズ株式会社 パワーモジュール
US10636735B2 (en) * 2011-10-14 2020-04-28 Cyntec Co., Ltd. Package structure and the method to fabricate thereof
JP5840933B2 (ja) * 2011-11-15 2016-01-06 トヨタ自動車株式会社 半導体装置
JP5484429B2 (ja) * 2011-11-18 2014-05-07 三菱電機株式会社 電力変換装置
CN103930986A (zh) * 2011-12-09 2014-07-16 富士电机株式会社 功率转换装置
CN104011853B (zh) * 2011-12-26 2016-11-09 三菱电机株式会社 电力用半导体装置及其制造方法
JP5661052B2 (ja) * 2012-01-18 2015-01-28 三菱電機株式会社 パワー半導体モジュールおよびその製造方法
JP5175989B1 (ja) * 2012-03-09 2013-04-03 福島双羽電機株式会社 平板形状の半導体装置
JP2014007209A (ja) * 2012-06-22 2014-01-16 Hitachi Automotive Systems Ltd 半導体装置及びその製造方法
JP5472498B2 (ja) * 2013-02-19 2014-04-16 三菱電機株式会社 パワーモジュールの製造方法
DE102013219245A1 (de) * 2013-09-25 2015-03-26 Siemens Aktiengesellschaft Leistungsmodul mit Einfassung
JP6218626B2 (ja) * 2014-01-31 2017-10-25 株式会社鶴見製作所 自動運転型片水路水中ポンプ
WO2015129418A1 (ja) * 2014-02-25 2015-09-03 日立オートモティブシステムズ株式会社 防水型電子機器及びその製造方法
CN105765716B (zh) * 2014-05-15 2018-06-22 富士电机株式会社 功率半导体模块和复合模块
JP6345265B2 (ja) * 2014-10-29 2018-06-20 日立オートモティブシステムズ株式会社 電子機器及び電子機器の製造方法
CN105161467B (zh) * 2015-08-14 2019-06-28 株洲南车时代电气股份有限公司 一种用于电动汽车的功率模块
JP6984171B2 (ja) * 2017-05-19 2021-12-17 株式会社アイシン 半導体装置
JP2019212809A (ja) * 2018-06-06 2019-12-12 トヨタ自動車株式会社 半導体装置
JP6971931B2 (ja) * 2018-07-27 2021-11-24 日立Astemo株式会社 パワー半導体装置
TWI727861B (zh) * 2020-07-23 2021-05-11 朋程科技股份有限公司 晶片封裝結構及其製造方法
US11404359B2 (en) * 2020-10-19 2022-08-02 Infineon Technologies Ag Leadframe package with isolation layer
JP7026861B1 (ja) * 2021-05-11 2022-02-28 三菱電機株式会社 半導体装置及び電力変換装置
JP2022179872A (ja) * 2021-05-24 2022-12-06 富士電機株式会社 半導体装置
JP2024077867A (ja) * 2022-11-29 2024-06-10 株式会社東芝 半導体装置

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DE4300516A1 (de) * 1993-01-12 1994-07-14 Abb Ixys Semiconductor Gmbh Leistungshalbleitermodul
US20040089941A1 (en) * 1999-11-24 2004-05-13 Kuniaki Mamitsu Semiconductor device having radiation structure
US20030106924A1 (en) * 2001-01-17 2003-06-12 Kazuhiro Nobori Electronic circuit device and method for manufacturing the same

Also Published As

Publication number Publication date
US20060091512A1 (en) 2006-05-04
JP2006128555A (ja) 2006-05-18
JP4338620B2 (ja) 2009-10-07
US7642640B2 (en) 2010-01-05
CN100594602C (zh) 2010-03-17
CN1790692A (zh) 2006-06-21
DE102005050330A1 (de) 2006-06-08

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